Manufacturing method of solar cell and solar cell
US-2017025561-A1 · Jan 26, 2017 · US
Hydrogenation of passivated contacts
US9911873B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9911873-B2 |
| Application number | US-201615234586-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 11, 2016 |
| Priority date | Aug 11, 2015 |
| Publication date | Mar 6, 2018 |
| Grant date | Mar 6, 2018 |
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Abstract
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Methods of hydrogenation of passivated contacts using materials having hydrogen impurities are provided. An example method includes applying, to a passivated contact, a layer of a material, the material containing hydrogen impurities. The method further includes subsequently annealing the material and subsequently removing the material from the passivated contact.
First claim
Opening claim text (preview).
What is claimed is: 1. A method comprising: applying, to a passivated contact, a layer of a material, the material containing hydrogen impurities; subsequently annealing the layer of the material; and subsequently removing the layer of the material from the passivated contact. 2. The method of claim 1 , wherein the layer of the material comprises alumina (Al2O3). 3. The method of claim 1 , wherein the layer of the material is applied using Plasma-Enhanced Chemical Vapor Deposition (PECVD). 4. The method of claim 1 , wherein the layer of the material is applied using Atomic Layer Deposition (ALD). 5. The method of claim 1 , wherein the passivated contact comprises a layer of polycrystalline silicon (pcSi) on silicon oxide (SiOx). 6. The method of claim 1 , further comprising growing the passivated contact on a silicon wafer, wherein growing the passivated contact comprises growing a layer of silicon oxide (SiOx) on the silicon wafer. 7. The method of claim 6 , wherein the layer of silicon oxide has a thickness of 10 nm or less. 8. The method of claim 7 , wherein the layer of silicon oxide has a thickness of 2 nm or less. 9. The method of claim 6 , wherein the layer of silicon oxide is thermally grown on the silicon wafer. 10. The method of claim 6 , wherein the layer of silicon oxide is chemically grown on the silicon wafer. 11. The method of claim 6 , wherein growing the passivated contact further comprises growing amorphous silicon on the layer of silicon oxide. 12. The method of claim 11 , wherein growing the passivated contact further comprises thermally crystalizing the amorphous silicon to form a layer of polycrystalline silicon (pcSi). 13. The method of claim 11 , wherein the amorphous silicon is applied using Plasma-Enhanced Chemical Vapor Deposition (PECVD). 14. The method of claim 1 , wherein removing the layer of the material comprises applying at least one of an acid or a base to the layer of the material. 15. The method of claim 1 , further comprising applying a doped amorphous silicon cap on the passivated contact after removing the layer of the material. 16. The method of claim 15 , wherein the doped amorphous silicon cap has a thickness between about 3 nm and about 7 nm. 17. The method of claim 1 , wherein the passivated contact is incorporated within a solar cell.
Assignees
Inventors
Classifications
Cross-Sectional Technologies · mapped topic
- H01L31/022425Primary
Electricity · mapped topic
Electricity · mapped topic
Monocrystalline silicon PV cells · CPC title
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9911873B2 cover?
- Methods of hydrogenation of passivated contacts using materials having hydrogen impurities are provided. An example method includes applying, to a passivated contact, a layer of a material, the material containing hydrogen impurities. The method further includes subsequently annealing the material and subsequently removing the material from the passivated contact.
- Who is the assignee on this patent?
- Alliance Sustainable Energy
- What technology area does this patent fall under?
- Primary CPC classification H01L31/022425. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 06 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).