Ultra-responsive phase shifters for depletion mode silcon modulators

Patent metadata

Field	Value
Publication number	US-9910302-B2
Application number	US-201715481669-A
Country	US
Kind code	B2
Filing date	Apr 7, 2017
Priority date	May 14, 2013
Publication date	Mar 6, 2018
Grant date	Mar 6, 2018

Abstract

A novel phase shifter design for carrier depletion based silicon modulators, based on an experimentally validated model, is described. It is believed that the heretofore neglected effect of incomplete ionization will have a significant impact on ultra-responsive phase shifters. A low VπL product of 0.3V·cm associated with a low propagation loss of 20 dB/cm is expected to be observed. The phase shifter is based on overlapping implantation steps, where the doses and energies are carefully chosen to utilize counter-doping to produce an S-shaped junction. This junction has a particularly attractive VπL figure of merit, while simultaneously achieving attractively low capacitance and optical loss. This improvement will enable significantly smaller Mach-Zehnder modulators to be constructed that nonetheless would have low drive voltages, with substantial decreases in insertion loss. The described fabrication process is of minimal complexity; in particular, no high-resolution lithographic step is required.

First claim

What is claimed is:

1. An optical modulator semiconductor device comprising:
a substrate;
an optical waveguide disposed upon the substrate;
a p-′type region of semiconductor material disposed within the optical waveguide, the p-type region having a p-′type contact terminal;
an n-_type region of semiconductor material disposed within the optical waveguide, the n-type region having an n-type contact terminal;
wherein the n-type region and the p-′type region share a non-planar junction interface that is shaped so as to enhance an overlap between an optical mode in the optical waveguide and the junction interface when the optical modulator semiconductor device is operational;
wherein the n-type region and the p-type region are configured to comprise at least one of a PNP structure or an NPN structure as viewed in a direction perpendicular to the substrate, and wherein the optical waveguide includes one or more N and P implantation overlap regions comprising at least a portion of the non-planar junction interface.

2. The optical modulator semiconductor device of claim 1 , wherein the non-planar junction interface comprises a convex side and a concave side as viewed in a first cross-section taken perpendicular to a light propagation direction in the optical waveguide.

3. The optical modulator semiconductor device of claim 2 , wherein the p-type region is on the concave side of the non-planar junction interface and the n-′type region is on the convex side of the non-planar junction interface.

4. The optical modulator semiconductor device of claim 2 , wherein the n-type region is on the concave side of the non-planar junction interface and the p-′type region is on the convex side of the non-planar junction interface.

5. The optical modulator semiconductor device of claim 1 , wherein in a first cross-section the p-type region is on a concave side of the non-planar junction interface and the n-type region is on a convex side of the non-planar junction interface, and wherein in a second cross-section the n-′type region is on a concave side of the non-planar junction interface and the p-type region is on a convex side of the non-planar junction interface, wherein the first and second cross-sections are perpendicular to a light propagation direction in the optical waveguide.

6. The optical modulator semiconductor device of claim 5 wherein the optical waveguide includes one or more N and P implantation overlap regions comprising the PNP structure and the NPN structure.

7. The optical modulator semiconductor device of claim 1 , wherein the semiconductor is silicon.

8. The optical modulator semiconductor device of claim 1 , wherein the p-type region is doped with boron.

9. The optical modulator semiconductor device of claim 1 , wherein the n-type region is doped with one of phosphorous or arsenic.

Assignees

• Elenion Tech Llc

Inventors

• Baehr Jones Thomas
• Liu Yang

Classifications

• G02F1/025 Primary

  in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title

• G02F1/015

  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction (G02F1/03 takes precedence) · CPC title

• G02F1/035

  in an optical waveguide structure · CPC title

• G02F1/0353

  involving an electro-optic TE-TM mode conversion · CPC title

• G02F1/0356

  controlled by a high-frequency electromagnetic wave component in an electric waveguide structure · CPC title