Method of CMP pad conditioning

Patent metadata

Field	Value
Publication number	US-9908213-B2
Application number	US-201514875410-A
Country	US
Kind code	B2
Filing date	Oct 5, 2015
Priority date	Sep 7, 2011
Publication date	Mar 6, 2018
Grant date	Mar 6, 2018

Abstract

A method of using a chemical mechanical polishing (CMP)apparatus that includes a apparatus is provided. The method includes providing a conditioning disc for conditioning the polishing pad, where the conditioning disc includes a plurality of portions of subsystem discs. The portions may be regions of the disc that are concentric. Each portion of the disc is operable to rotate at a different angular velocity. In some embodiments, a different applied loading is provided to each of the portions of the disc in addition to or in lieu of the different angular velocities.

First claim

What is claimed is:

1. A method, comprising:
providing a conditioning disc for conditioning a polishing pad of a chemical mechanical polish (CMP) apparatus, wherein the conditioning disc includes a first subsystem disc and a concentric second subsystem disc;
providing a dresser head coupled to the conditioning disc, wherein a first portion of the dresser head and the first subsystem disc define a first integral piece, and wherein a second portion of the dresser head and the second subsystem disc define a second integral piece;
applying, by a controller in communication with the dresser head, a first force to the first subsystem disc using the integral first portion of the dresser head; and
applying, by the controller in communication with the dresser head, a second force to the second subsystem disc using the integral second portion of the dresser head while applying the first force, the second force being different than the first force.

2. The method of claim 1 , wherein the applying the first force includes providing a first load, and wherein the applying the second force includes providing a second load different than the first load.

3. The method of claim 1 , wherein the applying the first force includes providing a first angular velocity, wherein the applying the second force includes providing a second angular velocity, and wherein the first and second angular velocities are different.

4. The method of claim 3 , wherein the first and second angular velocities have the same direction.

5. The method of claim 1 , further comprising:
providing a polishing pad disposed under the conditioning disc; and
applying a third force to the polishing pad using the integral first portion of the dresser head while applying a fourth force to the polishing pad using the integral second portion of the dresser head.

6. The method of claim 5 , further comprising:
determining the first force and the second force based on an age of the polishing pad.

7. The method of claim 5 , further comprising:
after applying the third and fourth forces to the polishing pad, using the polishing pad to perform a chemical mechanical polish of a semiconductor wafer.

8. The method of claim 1 , wherein at least one linear velocity of the first subsystem disc is substantially similar to at least one linear velocity of the second subsystem disc.

9. A method of conditioning a CMP pad, comprising:
providing a polishing pad;
providing a conditioning disc including a first subsystem disc and a concentric second subsystem disc;
providing a subsystem control device including a first subsystem control portion and a second subsystem control portion, wherein the first subsystem control portion and the first subsystem disc are formed by a first integral piece, and wherein the second subsystem control portion and the second subsystem disc are formed by a second integral piece; and
conditioning the polishing pad using the conditioning disc, wherein the conditioning includes rotating the first subsystem disc at a first angular velocity and simultaneously rotating the concentric second subsystem disc at a second angular velocity.

10. The method of claim 9 , wherein the conditioning includes applying a first force to the first subsystem disc by the integral first piece and simultaneously applying a second force to the second subsystem disc by the second integral piece.

11. The method of claim 10 , wherein the applied first force is greater than the applied second force and the concentric second subsystem disc surrounds the first subsystem disc.

12. The method of claim 9 , further comprising:
continuing to condition the polishing pad using the conditioning disc, wherein the continued conditioning includes rotating the first subsystem disc at a third angular velocity and simultaneously rotating the concentric second subsystem disc at a fourth angular velocity.

13. The method of claim 9 , wherein the first angular velocity is greater than the second angular velocity and the concentric second subsystem disc surrounds the first subsystem disc.

14. A method, comprising:
providing a conditioning disc for conditioning a polishing pad of a chemical mechanical polish (CMP) apparatus, wherein the conditioning disc has a first portion and a second portion;
providing a dresser head coupled to the conditioning disc, wherein the dresser head includes a first portion and a second portion;
forming a first integral piece including the first portion of the dresser head and the first portion of the conditioning disc, and forming a second integral piece including the second portion of the dresser head and the second portion of the conditioning disc;
applying a first force to the first portion of the conditioning disc by the integrated first portion of the dresser head, and while applying the first force, applying a second force to the second portion of the conditioning disc by the integrated second portion of the dresser head, wherein the second force is different than the first force; and
independently controlling the first and second forces by a controller coupled to the first and second portions of the dresser head.

15. The method of claim 14 , further comprising:
providing a first load by the integrated first portion of the dresser head, and providing a second load by the integrated second portion of the dresser head, wherein the second load is different than the first load.

16. The method of claim 14 , further comprising:
providing a first angular velocity by the integrated first portion of the dresser head, and providing a second angular velocity by the integrated second portion of the dresser head, wherein the first and second angular velocities are different.

17. The method of claim 16 , wherein the first and second angular velocities have the same direction.

18. The method of claim 14 , further comprising:
providing the polishing pad disposed under the conditioning disc; and
applying a third force to the polishing pad by way of the first portion of the conditioning disc and the integrated first portion of the dresser head, and while applying the third force, applying a fourth force to the polishing pad by way of the second portion of the conditioning disc and the integrated second portion of the dresser head.

19. The method of claim 18 , further comprising:
determining the first force and the second force based on an age of the polishing pad.

20. The method of claim 18 ,
applying the third and fourth forces to the polishing pad before a chemical mechanical polish is performed on a semiconductor wafer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Yeh Hsiu Ming
• Wu Feng Inn

Classifications

• H10P52/402

  of semiconductor materials · CPC title

• B24B53/12

  Dressing tools; Holders therefor · CPC title

• B24B53/02

  of plane surfaces on abrasive tools (B24B53/017 takes precedence) · CPC title

• B24B53/003

  using at least two conditioning tools · CPC title

• B24B53/053

  using a rotary dressing tool · CPC title