Forming electrode active materials

Patent metadata

Field	Value
Publication number	US-9905847-B2
Application number	US-201514945166-A
Country	US
Kind code	B2
Filing date	Nov 18, 2015
Priority date	Nov 18, 2015
Publication date	Feb 27, 2018
Grant date	Feb 27, 2018

Abstract

In an example of a method for making an electrode active material, a sacrificial layer is formed on a nanomaterial. Carbon is coated on the sacrificial layer to form a carbon layer. Titanium dioxide is coated on the carbon layer to form a titanium dioxide layer. The sacrificial layer is removed to form a void between the nanomaterial and the carbon layer.

First claim

The invention claimed is:

1. A method for making an electrode active material, the method comprising:
forming a sacrificial layer on a nanomaterial, wherein the sacrificial layer is selected from the group consisting of an aluminum oxide layer and a polymer layer;
coating the sacrificial layer with carbon to form a carbon layer;
coating the carbon layer with titanium dioxide to form a titanium dioxide layer; and
after the coating the carbon layer with the titanium dioxide, removing the sacrificial layer, thereby forming a first void between the nanomaterial and the carbon layer.

2. The method as defined in claim 1 wherein the sacrificial layer is the polymer layer and wherein the removing of the sacrificial layer is accomplished using heating or an organic solvent to dissolve the polymer layer.

3. The method as defined in claim 1 wherein the sacrificial layer is the aluminum oxide layer and wherein the removing of the sacrificial layer is accomplished using an alkali solution.

4. The method as defined in claim 1 wherein the coating of the sacrificial layer with carbon is accomplished by one of:
a deposition technique that involves reducing a deposition temperature down to about 18° C. to about 22° C.; or
reactive sputtering with graphite as a target.

5. The method as defined in claim 1 wherein:
prior to forming the sacrificial layer, the method further comprises coating or forming the nanomaterial on a sacrificial nanomaterial; and
the removing of the sacrificial layer also includes removing the sacrificial nanomaterial to form a second void at a center of the nanomaterial.

6. The method as defined in claim 1 wherein:
the nanomaterial is silicon nanorods, silicon suboxide nanorods (SiO x where 0<x<2), or silicon alloy nanorods; and
prior to the forming of the sacrificial layer on the nanomaterial, the method further comprises forming the silicon nanorods, the silicon suboxide nanorods (SiO x where 0<x<2), or the silicon alloy nanorods on a seed layer having a copper-silicon gradient by oblique angle deposition or glancing angle deposition.

7. The method as defined in claim 6 wherein the sacrificial layer is the polymer layer deposited by molecular layer deposition, plasma polymerization, or wet chemistry.

8. The method as defined in claim 6 wherein the sacrificial layer is the aluminum oxide layer formed using oblique angle deposition, glancing angle deposition, atomic layer deposition, or wet chemistry.

9. The method as defined in claim 1 wherein the nanomaterial is a porous silicon nanomaterial, and wherein the method further comprises forming the porous silicon nanomaterial by:
preparing composite particles of silicon in an amorphous phase and a material that is immiscible with the silicon;
inducing phase separation within the composite particles to precipitate out the silicon and form phase separated composite particles; and
chemically etching the immiscible material from the phase separated composite particles, thereby forming the porous silicon nanomaterial.

10. The method as defined in claim 1 wherein the forming of the sacrificial layer, the coating of the sacrificial layer with the carbon, and the coating of the carbon layer with the titanium dioxide are accomplished by plasma-enhanced chemical vapor deposition, chemical vapor deposition, molecular layer deposition, atomic layer deposition, or a wet chemical process.

11. The method as defined in claim 1 wherein during or after the coating the carbon layer with the titanium dioxide and after the removing the sacrificial layer, the method further comprises doping the titanium dioxide with a conductive additive.

12. A method for making an electrode active material, the method comprising:
forming a sacrificial layer on a nanomaterial;
coating the sacrificial layer with carbon to form a carbon layer by one of:
a deposition technique that involves reducing a deposition temperature down to about 18° C. to about 22° C.; or
reactive sputtering with graphite as a target;

coating the carbon layer with titanium dioxide to form a titanium dioxide layer; and
after the coating the carbon layer with the titanium dioxide, removing the sacrificial layer, thereby forming a first void between the nanomaterial and the carbon layer.

13. The method as defined in claim 12 wherein:
prior to forming the sacrificial layer, the method further comprises coating or forming the nanomaterial on a sacrificial nanomaterial; and
the removing of the sacrificial layer also includes removing the sacrificial nanomaterial to form a second void at a center of the nanomaterial.

14. The method as defined in claim 12 wherein:
the nanomaterial is silicon nanorods, silicon suboxide nanorods (SiO x where 0<x<2), or silicon alloy nanorods; and
prior to the forming of the sacrificial layer on the nanomaterial, the method further comprises forming the silicon nanorods, the silicon suboxide nanorods (SiO x where 0<x<2), or the silicon alloy nanorods on a seed layer having a copper-silicon gradient by oblique angle deposition or glancing angle deposition.

15. The method as defined in claim 12 wherein the nanomaterial is a porous silicon nanomaterial, and wherein the method further comprises forming the porous silicon nanomaterial by:
preparing composite particles of silicon in an amorphous phase and a material that is immiscible with the silicon;
inducing phase separation within the composite particles to precipitate out the silicon and form phase separated composite particles; and

chemically etching the immiscible material from the phase separated composite particles, thereby forming the porous silicon nanomaterial.

16. The method as defined in claim 12 wherein the forming of the sacrificial layer and the coating of the carbon layer with the titanium dioxide are accomplished by plasma-enhanced chemical vapor deposition, chemical vapor deposition, molecular layer deposition, atomic layer deposition, or a wet chemical process.

17. A method for making an electrode active material, the method comprising:
forming a first sacrificial layer on a nanomaterial;
coating the sacrificial layer with carbon to form a carbon layer;
coating the carbon layer with titanium dioxide to form a titanium dioxide layer; and
after the coating the carbon layer with the titanium dioxide, removing the sacrificial layer, thereby forming a first void between the nanomaterial and the carbon layer, wherein the forming of the sacrificial layer, the coating of the sacrificial layer with the carbon, and the coating of the carbon layer with the titanium dioxide are accomplished by plasma-enhanced chemical vapor deposition, chemical vapor deposition, molecular layer deposition, atomic layer deposition, or a wet chemical process.

18. The method as defined in claim 17 wherein:
prior to forming the sacrificial layer, the method further comprises coating or forming the nanomaterial on a sacrificial nanomaterial; and
the removing of the sacrificial layer also includes removing the sacrificial nanomaterial to form a second void at a center of the nanomaterial.

19. The method as defined in claim 17 wherein:
the nanomaterial is silicon nanorods, silicon suboxide nanorods (SiO x where 0<x<2), or silicon alloy nanorods; and
prior to the forming of the sacrificial layer on the nanomaterial, the method further comprises forming the silicon nanorods, the silicon suboxide nanorods (SiO x where 0<x<2), or the silicon alloy nanorods on a seed layer having a copper-silicon gradient by oblique angle deposi

Assignees

• Gm Global Tech Operations Llc

Inventors

• Dadheech Gayatri V
• Xiao Xingcheng
• Cai Mei

Classifications

• H01M4/38

  of elements or alloys · CPC title

• H01M4/386

  Silicon or alloys based on silicon · CPC title

• H01M4/625

  Carbon or graphite · CPC title

• H01M4/483

  for non-aqueous cells (H01M4/485 takes precedence) · CPC title

• H01M4/366 Primary

  as layered products · CPC title