Optoelectronic device including quantum dot

Patent metadata

Field	Value
Publication number	US-9905790-B2
Application number	US-201615091650-A
Country	US
Kind code	B2
Filing date	Apr 6, 2016
Priority date	Oct 27, 2015
Publication date	Feb 27, 2018
Grant date	Feb 27, 2018

Abstract

Provided are optoelectronic devices including quantum dots. An optoelectronic device may include an active layer including a quantum dot and at least one molecular interlayer adjacent to the active layer. The active layer may be provided between two electrodes, and a charge transfer layer may be provided adjacent to the active layer. The molecular interlayer may be provided between the active layer and the charge transfer layer. The molecular interlayer may have a smaller amount of surface charge than the charge transfer layer. The molecular interlayer may include a nonionic material or a hydrophobic material. The charge transfer layer may include an electron transport layer, and the electron transport layer may include an inorganic semiconductor.

First claim

What is claimed is:

1. An optoelectronic device comprising:
a first electrode;
a second electrode spaced apart from the first electrode;
an active layer disposed between the first electrode and the second electrode, the active layer consisting substantially of quantum dots;
an electron transport layer disposed between the active layer and the second electrode, the electron transport layer having a first surface charge; and
a molecular interlayer disposed between the electron transport layer and the active layer, the molecular interlayer comprising organic molecules and having a second surface charge less than the first surface charge, and the molecular interlayer being in direct contact with the active layer.

2. The optoelectronic device of claim 1 , wherein the molecular interlayer comprises a hydrophobic material or a nonionic material.

3. The optoelectronic device of claim 1 , wherein the molecular interlayer comprises a low molecular material or a high molecular material.

4. The optoelectronic device of claim 1 , wherein the molecular interlayer comprises tetracyanoquinodimethane (TCNQ).

5. The optoelectronic device of claim 1 , wherein a conduction band minimum energy level (E C ) of the molecular interlayer is greater than or equal to an E C of the active layer and smaller than or equal to an E C of the electron transport layer.

6. The optoelectronic device of claim 1 , wherein the electron transport layer comprises an inorganic semiconductor.

7. The optoelectronic device of claim 6 , wherein the inorganic semiconductor comprises an oxide material or a non-oxide material, and
the oxide material comprises at least one selected from Zn oxide, Ti oxide, Sn oxide, and Zr oxide.

8. The optoelectronic device of claim 1 , further comprising a hole transport layer disposed between the first electrode and the active layer.

9. The optoelectronic device of claim 8 , wherein the hole transport layer comprises an organic semiconductor.

10. The optoelectronic device of claim 8 , wherein the hole transport layer is in direct contact with the active layer.

11. The optoelectronic device of claim 8 , wherein the molecular interlayer is a first molecular interlayer,
the optoelectronic device further comprises a second molecular interlayer disposed between the hole transport layer and the active layer, and
a valence band maximum energy level (E V ) of the second molecular interlayer is smaller than or equal to an E V of the hole transport layer and greater than or equal to an E V of the active layer.

12. The optoelectronic device of claim 8 , further comprising a hole injection layer disposed between the first electrode and the hole transport layer, the hole injection layer comprising an organic or inorganic semiconductor different than a material of the hole transport layer.

13. The optoelectronic device of claim 1 , further comprising an electron injection layer disposed between the second electrode and the electron transport layer, the electron injection layer comprising an inorganic or organic material different than a material of the electron transport layer.

14. The optoelectronic device of claim 1 , wherein each of the quantum dots comprises at least one selected from a group II-VI based semiconductor, a group III-V based semiconductor, a group IV-VI based semiconductor, a group IV based semiconductor, and a graphene quantum dot.

15. The optoelectronic device of claim 1 , wherein the active layer is a light-emitting layer, and
the optoelectronic device is a light-emitting device.

16. The optoelectronic device of claim 1 , wherein the active layer is a photoactive layer, and
the optoelectronic device is a light-receiving device.

17. An optoelectronic device comprising:
a first electrode;
a second electrode spaced apart from the first electrode;
an active layer disposed between the first electrode and the second electrode, the active layer consisting substantially of quantum dots;
a hole transport layer disposed between the active layer and the first electrode, the hole transport layer comprising an organic semiconductor;
an electron transport layer disposed between the active layer and the second electrode, the electron transport layer comprising an inorganic semiconductor and having a first surface charge; and
a molecular interlayer disposed between the electron transport layer and the active layer, the molecular interlayer comprising organic molecules and having a second surface charge less than the first surface charge, and the molecular interlayer being in direct contact with the active layer.

18. The optoelectronic device of claim 17 , wherein the molecular interlayer comprises a hydrophobic material or a nonionic material.

19. The optoelectronic device of claim 17 , wherein the molecular interlayer comprises tetracyanoquinodimethane (TCNQ).

20. The optoelectronic device of claim 17 , wherein a conduction band minimum energy level (E C ) of the molecular interlayer is greater than or equal to an E C of the active layer and smaller than or equal to an E C of the electron transport layer.

21. The optoelectronic device of claim 17 , wherein the inorganic semiconductor comprises at least one selected from Zn oxide, Ti oxide, Sn oxide, and Zr oxide.

22. The optoelectronic device of claim 17 , wherein the organic semiconductor comprises at least one selected from TFB, CBP, TPD, PVK, TCTA, NPD, PFB, and F8T2.

23. The optoelectronic device of claim 17 , wherein the electron transport layer comprises ZnO, and
the molecular interlayer comprises tetracyanoquinodimethane (TCNQ).

24. The optoelectronic device of claim 17 , further comprising a hole injection layer disposed between the first electrode and the hole transport layer, the hole injection layer comprising an organic or inorganic semiconductor different than the organic semiconductor of the hole transport layer.

25. The optoelectronic device of claim 17 , further comprising an electron injection layer disposed between the second electrode and the electron transport layer, the electron injection layer comprising an inorganic or organic material different than the inorganic semiconductor of the electron transport layer.

26. The optoelectronic device of claim 1 , wherein a first energy conduction band of the molecular interlayer is in direct contact with a second energy conduction band of the active layer.

Assignees

• Samsung Electronics Co Ltd

Inventors

• KOH Weonkyu
• Shin Taeho
• Cho Kyungsang

Classifications

• H01L51/426

  Electricity · mapped topic

• H01L51/5072

  Electricity · mapped topic

• H01L2251/305

  Electricity · mapped topic

• H01L51/5088

  Electricity · mapped topic

• H01L51/4273

  Electricity · mapped topic