Solid state lighting devices including quantum confined semiconductor nanoparticles, an optical component for a solid state lighting device, and methods
US-9167659-B2 · Oct 20, 2015 · US
US9905724B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9905724-B2 |
| Application number | US-201514853263-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 14, 2015 |
| Priority date | Apr 28, 2009 |
| Publication date | Feb 27, 2018 |
| Grant date | Feb 27, 2018 |
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An optical material comprising quantum confined semiconductor nanoparticles, wherein at least a portion of the nanoparticles are in a charge neutral state is disclosed. Also disclosed is an optical component including an optical material comprising quantum confined semiconductor nanoparticles, wherein at least a portion of the nanoparticles are in a charge neutral state. Further disclosed is an optical material obtainable by at least partially encapsulating an optical material comprising quantum confined semiconductor nanoparticles and irradiating the at least partially encapsulated optical material with a light flux for a period of time sufficient to neutralize the charge on at least a portion of the nanoparticles. Further enclosed is an optical component obtainable by at least partially encapsulating an optical component including an optical material comprising quantum confined semiconductor nanoparticles and irradiating the at least partially encapsulated optical material with a light flux for a period of time sufficient to neutralize the charge on at least a portion of the nanoparticles. Methods are also disclosed.
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The invention claimed is: 1. A method for treating an optical component including an optical material comprising quantum confined semiconductor nanoparticles, wherein the optical material is at least partially encapsulated, the method comprising irradiating the optical component including the optical material comprising the quantum confined semiconductor nanoparticles with a light flux for a period of time sufficient to neutralize the charge on at least one quantum confined semiconductor nanoparticle of the quantum confined semiconductor nanoparticles, wherein the light flux is from about 10 to about 100 mW/cm 2 . 2. A method in accordance with claim 1 wherein the optical material is irradiated for a period of time sufficient to increase photoluminescent efficiency of the optical material by at least 10% of its value prior to irradiation. 3. A method in accordance with claim 1 wherein the optical material is irradiated for a period of time sufficient to increase photoluminescent efficiency of the optical material by at least 30% of its value prior to irradiation. 4. A method in accordance with claim 1 wherein the optical component is irradiated in an atmosphere that includes oxygen. 5. A method in accordance with claim 1 wherein the optical component is irradiated in an inert atmosphere. 6. A method in accordance with claim 1 wherein the optical material is at least partially encapsulated by including the optical material on a glass substrate and including a coating over at least a portion of a surface of the optical material opposite the glass substrate. 7. A method in accordance with claim 1 wherein the optical material is at least partially encapsulated by sandwiching the optical material between glass substrates. 8. A method in accordance with claim 1 wherein the optical material is fully encapsulated. 9. A method in accordance with claim 1 wherein the optical material is encapsulated between opposing substrates that are sealed together by a seal, wherein each of the substrates and seal comprises a material that is substantially oxygen impervious. 10. A method in accordance with claim 1 wherein the optical material is encapsulated between opposing substrates that are sealed together by a seal, wherein each of the substrates and seal comprises a material that is substantially oxygen and water impervious. 11. A method in accordance with claim 1 wherein the optical material is disposed on a glass substrate and the optical material is covered by a coating comprising a barrier material. 12. A method in accordance with claim 11 wherein the barrier material comprises a material that is substantially oxygen and water impervious. 13. A method in accordance with claim 11 wherein the barrier comprises a material that is substantially oxygen impervious. 14. A method in accordance with claim 1 wherein the optical material is irradiated while at a temperature in a range from about 25° to about 80° C. 15. A method in accordance with claim 1 wherein the optical material further comprises a host material in which the quantum confined semiconductor nanoparticles are dispersed. 16. A method in accordance with claim 8 wherein the optical material is encapsulated between glass plates that are sealed together by a barrier material. 17. A method in accordance with claim 8 wherein the optical material is encapsulated between glass plates that are sealed together by a glass-to-glass perimeter or edge seal. 18. A method in accordance with claim 8 wherein the optical material is encapsulated between glass plates that are sealed together by a glass-to-metal perimeter or edge seal. 19. A method in accordance with claim 1 wherein substantially all of the quantum confined semiconductor nanoparticles are charge neutral. 20. A method in accordance with claim 1 wherein the optical material is irradiated by a light source including emission in a range from about 365 nm to about 480 nm.
Exhibiting three-dimensional carrier confinement, e.g. quantum dots · CPC title
Scattering dots or dot-like elements, e.g. microbeads, scattering particles, nanoparticles · CPC title
made of materials engineered to provide properties not available in nature, e.g. metamaterials · CPC title
with zinc or cadmium · CPC title
the semiconductor light source comprising an array of light emitters · CPC title
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