Semiconductor device comprising capacitor

Patent metadata

Field	Value
Publication number	US-9905585-B2
Application number	US-201314134284-A
Country	US
Kind code	B2
Filing date	Dec 19, 2013
Priority date	Dec 25, 2012
Publication date	Feb 27, 2018
Grant date	Feb 27, 2018

Abstract

A semiconductor device in which the aperture ratio and which includes a capacitor with increased charge capacity is provided. A semiconductor device in which the number of masks used in a manufacturing process is reduced and the manufacturing costs are reduced is also provided. An impurity is contained in a light-transmitting semiconductor film so that the semiconductor film functions as one of a pair of electrodes in a capacitor. The other pair of electrodes is formed using a light-transmitting conductive film such as a pixel electrode. Further, a scan line and a capacitor line are provided on the same surface and in parallel to each other. An opening reaching the capacitor line and an opening reaching a conductive film which can be formed in the formation of a source electrode or a drain electrode of the transistor can be formed concurrently in an insulating film.

First claim

What is claimed is:

1. A semiconductor device comprising:
a transistor comprising a gate electrode, a source electrode, a drain electrode, and a light-transmitting semiconductor film;
a light-transmitting conductive film on a surface where the light-transmitting semiconductor film is formed, wherein the light-transmitting conductive film functions as one of a pair of electrodes of a capacitor;
an insulating film over the light-transmitting conductive film, wherein the insulating film functions as a dielectric film of the capacitor;
a pixel electrode electrically connected to the transistor, wherein the pixel electrode functions as the other of the pair of electrodes of the capacitor;
a capacitor line on a surface where the gate electrode is formed;
an electrode on a surface where the pixel electrode is formed; and
a conductive film on a surface where the source electrode or the drain electrode is formed,
wherein the capacitor line is electrically connected to the light-transmitting conductive film through the electrode and the conductive film,
wherein the light-transmitting conductive film includes a region whose conductivity is higher than the conductivity of the light-transmitting semiconductor film,
wherein the electrode and the conductive film are formed from at least one of different materials, and
wherein the conductive film is in contact with a side surface of the light-transmitting conductive film.

2. The semiconductor device according to claim 1 ,
wherein the light-transmitting semiconductor film is over the gate electrode,
wherein the source electrode and the drain electrode are over the light-transmitting semiconductor film, and
wherein the electrode is over the conductive film.

3. The semiconductor device according to claim 1 ,
wherein the light-transmitting semiconductor film is an oxide semiconductor film.

4. The semiconductor device according to claim 3 , further comprising a first oxide film and a second oxide film between which the oxide semiconductor film is interposed.

5. The semiconductor device according to claim 1 ,
wherein the light-transmitting conductive film comprises one or more elements selected from the group consisting of hydrogen, boron, nitrogen, fluorine, aluminum, phosphorus, arsenic, indium, tin, antimony, and a rare gas element.

6. A semiconductor device comprising:
a transistor comprising a gate electrode, a source electrode, a drain electrode, and a light-transmitting semiconductor film;
an insulating film having a stacked structure of an oxide insulating film and a nitride insulating film over the oxide insulating film, wherein the insulating film is over the light-transmitting semiconductor film;
a light-transmitting conductive film on a surface where the light-transmitting semiconductor film is formed, wherein the light-transmitting conductive film is in contact with the oxide insulating film and functions as one of a pair of electrodes of a capacitor;
a pixel electrode electrically connected to the transistor, wherein the pixel electrode functions as the other of the pair of electrodes of the capacitor;
a capacitor line on a surface where the gate electrode is formed;
an electrode on a surface where the pixel electrode is formed; and
a conductive film on a surface where the source electrode or the drain electrode is formed,
wherein the nitride insulating film functions as a dielectric film of the capacitor,
wherein the capacitor line is electrically connected to the light-transmitting conductive film through the electrode and the conductive film,
wherein the light-transmitting conductive film includes a region whose conductivity is higher than the conductivity of the light-transmitting semiconductor film,
wherein the electrode and the conductive film are formed from at least one of different materials, and
wherein the conductive film is in contact with a side surface of the light-transmitting conductive film.

7. The semiconductor device according to claim 6 ,
wherein the light-transmitting semiconductor film is over the gate electrode,
wherein the source electrode and the drain electrode are over the light transmitting semiconductor film, and
wherein the electrode is over the conductive film.

8. The semiconductor device according to claim 6 ,
wherein the light-transmitting semiconductor film is an oxide semiconductor film.

9. The semiconductor device according to claim 8 , further comprising a first oxide film and a second oxide film between which the oxide semiconductor film is interposed.

10. The semiconductor device according to claim 6 ,
wherein the light-transmitting conductive film comprises one or more elements selected from the group consisting of hydrogen, boron, nitrogen, fluorine, aluminum, phosphorus, arsenic, indium, tin, antimony, and a rare gas element.

11. The semiconductor device according to claim 1 ,
wherein the conductive film is sandwiched between the light-transmitting conductive film and the pixel electrode.

12. The semiconductor device according to claim 1 ,
wherein a bottom surface of the electrode is electrically connected to an upper surface of the conductive film.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Miyake Hiroyuki

Classifications

• G02F1/1368

  in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title

• H01L27/1259

  Electricity · mapped topic

• H01L27/1255 Primary

  Electricity · mapped topic

• H01L27/1225

  Electricity · mapped topic

• H10D86/441

  Interconnections, e.g. scanning lines · CPC title