High boiling temperature solvent additives for semiconductor processing

Patent metadata

Field	Value
Publication number	US-9905457-B2
Application number	US-201414583514-A
Country	US
Kind code	B2
Filing date	Dec 26, 2014
Priority date	Dec 26, 2014
Publication date	Feb 27, 2018
Grant date	Feb 27, 2018

Abstract

A method for forming an interconnect structure includes forming a patterned layer over a substrate, the patterned layer having an opening therein. A dielectric material is filled in the opening. The dielectric material has a precursor and a solvent, the solvent having a boiling point temperature greater than a precursor cross-linking temperature. A thermal treatment is performed on the dielectric material to form a dielectric layer.

First claim

What is claimed is:

1. A method for forming a dielectric structure, the method comprising:
forming a first barrier layer over a substrate;
forming a patterned layer over the first barrier layer, the patterned layer comprising conductive elements, the patterned layer having a first opening therein, the first opening extending through the first barrier layer;
filling a dielectric material in the first opening, the dielectric material having a precursor and a solvent, the solvent having a boiling point temperature greater than a cross-linking temperature of the precursor;
performing a thermal treatment of the dielectric material, wherein the thermal treatment induces a cross-linking reaction;
performing a chemical mechanical polish (CMP) to planarize the dielectric material;
after performing the thermal treatment, patterning the dielectric material to form a second opening extending to the patterned layer; and
filling the second opening with a conductive material to form a conductive via.

2. The method of claim 1 , wherein the patterned layer is a conductive layer.

3. The method of claim 1 , wherein the dielectric material comprises a low-k dielectric material, a porous low-k material, a spin-on-glass material, or a spin-on-polymer material.

4. The method of claim 1 , wherein the solvent comprises propyl benzoate (C10H12O2), ethyl benzoate (C9H10O2), diethylene glycol (C4H10O3), N-Methyl-2-pyrrolidone (NMP) (C5H9NO), or combinations thereof.

5. The method of claim 1 , wherein the filling the dielectric material into the first opening comprises depositing the dielectric material using a spin-on coating process.

6. The method of claim 1 , wherein the solvent has a boiling point temperature above about 200° C.

7. The method of claim 1 , wherein an amount of solvent in the dielectric material is greater than about 5% by weight of the dielectric material.

8. The method of claim 1 , wherein the cross-linking temperature of the precursor is above about 150° C.

9. The method of claim 1 , wherein the performing the thermal treatment comprises:
heating the substrate at a first temperature between about 60° C. and about 200° C. for a first duration from about 30 seconds to about 10 minutes; and
curing the substrate at a second temperature from about 300° C. to about 400° C. for a second duration from about 2 minutes to about 20 minutes.

10. A method for forming a dielectric structure, the method comprising:
forming a layer having a first opening over a substrate;
mixing a precursor with a solvent to form a solution, the precursor having a cross-linking temperature, the solvent having a boiling point temperature greater than the cross-linking temperature;
spin coating the solution into the first opening;
baking the solution at a second temperature between the cross-linking temperature and the boiling point temperature;
curing the solution at a third temperature greater than the boiling point temperature to form a dielectric layer;
patterning the dielectric layer to form a second opening; and
forming a conductive via in the second opening.

11. The method of claim 10 , wherein the solvent comprises propyl benzoate (C10H12O2), ethyl benzoate (C9H10O2), diethylene glycol (C4H10O3), N-Methyl-2-pyrrolidone (NMP) (C5H9NO), or combinations thereof.

12. The method of claim 10 , wherein the boiling point temperature is above about 200° C.

13. The method of claim 10 , wherein an amount of solvent in the solution is greater than about 5% by weight of the solution.

14. The method of claim 10 , wherein the cross-linking temperature is above about 150° C.

15. The method of claim 10 , wherein the baking the solution comprises heating the solution at the second temperature between about 60° C. and about 200° C. for a first duration from about 30 seconds to about 10 minutes, and wherein the curing the solution comprises heating the solution at the third temperature from about 300° C. to about 400° C. for a second duration from about 2 minutes to about 20 minutes.

16. A method for forming a dielectric structure, the method comprising:
forming a first barrier layer over a substrate;
forming a conductive layer over the first barrier layer;
forming a first opening through the conductive layer and the first barrier layer;
conformally depositing a second barrier layer over the conductive layer, the second barrier layer being over an uppermost surface of the conductive layer, the second barrier layer being in the first opening and interposed between laterally disposed portions of the first barrier layer;
forming a dielectric material over the conductive layer, the dielectric material filling the first opening, the dielectric material comprising a precursor and a solvent, the solvent having a boiling point temperature greater than a cross-linking temperature of the precursor, the solvent comprising at least one of a benzoate, a glycol, or a pyrrolidone;
cross-linking the dielectric material;
after cross-linking the dielectric material, forming a second opening in the dielectric material, the second opening exposing a portion of the conductive layer; and
filling the second opening with conductive material to form a conductive via.

17. The method of claim 16 , wherein the solvent comprises propyl benzoate (C10H12O2), ethyl benzoate (C9H10O2), diethylene glycol (C4H10O3), N-Methyl-2-pyrrolidone (NMP) (C5H9NO), or combinations thereof.

18. The method of claim 16 , wherein an amount of solvent in the dielectric material is greater than about 5% by weight of the dielectric material.

19. The method of claim 16 , wherein the cross-linking the dielectric material comprises:
heating the substrate at a first temperature between about 60° C. and about 200° C. for a first duration from about 30 seconds to about 10 minutes; and
curing the substrate at a second temperature from about 300° C. to about 400° C. for a second duration from about 2 minutes to about 20 minutes.

20. The method of claim 16 , wherein the dielectric material comprises a low-k dielectric material, a porous low-k material, a spin-on-glass material, or a spin-on-polymer material.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lin Bo Jiun
• Chang Ching Yu
• Chen Hai Ching
• Bao Tien I

Classifications

• H10W20/0633

  using subtractive patterning of the conductive members · CPC title

• H10P14/6684

  the compound comprising silicon and oxygen · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• H10P14/683

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title