Self-aligned non-mandrel cut formation for tone inversion

Patent metadata

Field	Value
Publication number	US-9905424-B1
Application number	US-201715494803-A
Country	US
Kind code	B1
Filing date	Apr 24, 2017
Priority date	Apr 24, 2017
Publication date	Feb 27, 2018
Grant date	Feb 27, 2018

Abstract

Methods of forming self-aligned non-mandrel cuts during the fabrication of an interconnect structure. A first dielectric hardmask layer is formed on a metal hardmask layer. A plurality of mandrels are formed on the first dielectric hardmask layer, and a plurality of spacers are formed on the first dielectric hardmask layer. The spacers are located adjacent to the mandrels. A first sacrificial layer is formed that fills spaces between the spacers, and a second dielectric hardmask layer is formed on the first sacrificial layer, the spacers, and the mandrels. A plurality of sections of a second sacrificial layer are formed on the second dielectric hardmask layer and cover the second dielectric hardmask layer over a plurality of areas that are used to form the non-mandrel cuts.

First claim

What is claimed is:

1. A method comprising:
forming a first dielectric hardmask layer on a metal hardmask layer;
forming a plurality of mandrels on the first dielectric hardmask layer;
forming a plurality of spacers on the first dielectric hardmask layer that are located adjacent to the plurality of mandrels;
forming a first sacrificial layer that fills spaces between the plurality of spacers;
forming a second dielectric hardmask layer on the first sacrificial layer, the plurality of spacers, and the plurality of mandrels; and
forming a plurality of sections of a second sacrificial layer on the second dielectric hardmask layer that cover the second dielectric hardmask layer over a plurality of first areas that are used to form a plurality of non-mandrel cuts.

2. The method of claim 1 wherein the first sacrificial layer and the second sacrificial layer are comprised of the same material.

3. The method of claim 1 wherein the first sacrificial layer is thicker than the second sacrificial layer.

4. The method of claim 1 wherein the first sacrificial layer and the second sacrificial layer have identical etch selectivities.

5. The method of claim 1 wherein the first dielectric hardmask layer is thicker than the second dielectric hardmask layer.

6. The method of claim 1 wherein the first dielectric hardmask layer and the second dielectric hardmask layer are comprised of the same material.

7. The method of claim 1 wherein the first dielectric hardmask layer and the second dielectric hardmask layer have identical etch selectivities.

8. The method of claim 1 wherein forming the plurality of sections of the second sacrificial layer on the second dielectric hardmask layer that cover the second dielectric hardmask layer over the plurality of first areas that are used to form the plurality of non-mandrel cuts comprises:
depositing a mandrel layer on the second dielectric hardmask layer;
patterning the mandrel layer to form a plurality of sections;
filling spaces between the plurality of sections of the mandrel layer with the plurality of sections of the second sacrificial layer; and
removing the plurality of sections of the mandrel layer selective to the plurality of sections of the second sacrificial layer.

9. The method of claim 8 wherein the first sacrificial layer and the plurality of mandrels have a first thickness, and the plurality of sections of the mandrel layer and the plurality of sections of the second sacrificial layer have a second thickness that is less than the first thickness.

10. The method of claim 8 wherein the mandrel layer is comprised of a first material and the second sacrificial layer is comprised of a second material that is removable selective to the first material.

11. The method of claim 10 wherein the first material is amorphous silicon and the second material is a spin-on material with etch selectivity to amorphous silicon.

12. The method of claim 10 wherein the first material is amorphous carbon and the second material is a spin-on material with etch selectivity to amorphous carbon.

13. The method of claim 1 further comprising:
removing the second dielectric hardmask layer to open a plurality of second areas to the first sacrificial layer, the plurality of spacers, and the plurality of mandrels,
wherein the plurality of first areas of the second dielectric hardmask layer are masked by the second sacrificial layer.

14. The method of claim 13 further comprising:
removing the first sacrificial layer from the plurality of spaces between the plurality of spacers over the plurality of second areas to expose the first dielectric hardmask layer,
wherein the first sacrificial layer in the spaces between the plurality of spacers over the plurality of first areas is masked by the second dielectric hardmask layer when the first sacrificial layer is removed from the spaces between the plurality of spacers over the plurality of second areas.

15. The method of claim 14 further comprising:
after the first sacrificial layer is removed from the spaces between the plurality of spacers over the plurality of second areas, removing portions of the first dielectric hardmask layer unmasked by the removal of the first sacrificial layer from the spaces between the plurality of spacers over the plurality of second areas.

16. The method of claim 15 wherein the second dielectric hardmask layer is removed when the first dielectric hardmask layer is etched.

17. The method of claim 15 further comprising:
patterning the metal hardmask layer using the first dielectric hardmask layer as an etch mask.

18. The method of claim 17 wherein the metal hardmask layer is located on an interlayer dielectric layer, and further comprising:
after the metal hardmask layer is patterned, etching a plurality of plurality of trenches in the interlayer dielectric layer; and
filling the trenches with a conductor,
wherein a plurality of sections of the interlayer dielectric layer are masked in the spaces between the plurality of spacers over the plurality of first areas to form the plurality of non-mandrel cuts between pairs of the plurality of trenches.

19. The method of claim 1 wherein the first sacrificial layer projects above a top surface of the plurality of mandrels and the plurality of spacers.

20. The method of claim 19 wherein forming the plurality of sections of the second sacrificial layer on the second dielectric hardmask layer that cover the second dielectric hardmask layer over the plurality of first areas that are used to form the plurality of non-mandrel cuts comprises:
depositing a mandrel layer on the second dielectric hardmask layer;
patterning the mandrel layer to form a plurality of sections; and
filling spaces between the plurality of sections of the mandrel layer with the plurality of sections of the second sacrificial layer,
wherein the second sacrificial layer is coplanar with a top surface of sections of the mandrel layer, and the first sacrificial layer is thicker than the second sacrificial layer and the mandrel layer.

Assignees

• Globalfoundries Inc

Inventors

• Law Shao Beng

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/4083

  characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10W20/089 Primary

  using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title