Plasma processing chamber with a grounded electrode assembly

Patent metadata

Field	Value
Publication number	US-9905402-B2
Application number	US-201514807883-A
Country	US
Kind code	B2
Filing date	Jul 24, 2015
Priority date	Dec 21, 2005
Publication date	Feb 27, 2018
Grant date	Feb 27, 2018

Abstract

An optimized plasma processing chamber configured to provide a current path is provided. The optimized plasma processing chamber includes at least an upper electrode, a powered lower electrode, a heating plate, a cooling plate, a plasma chamber lid, and clamp ring. Both the heating plate and the cooling plate are disposed above the upper electrode whereas the heating plate is configured to heat the upper electrode while the cooling plate is configured to cool the upper electrode. The clamp ring is configured to secure the upper electrode to a plasma chamber lid and to provide a current path from the upper electrode to the plasma chamber lid. A pocket may be formed between the clamp ring and the upper electrode to hold at least the heater plate, wherein the pocket is configured to allow longitudinal and lateral tolerances for thermal expansion of the heater plate from repetitive thermal cycling.

First claim

What is claimed is:

1. An upper electrode for use in a plasma processing chamber comprising:
an upper electrode assembly configured to provide a ground path for the plasma processing chamber, wherein the upper electrode assembly includes an electrode configured to be exposed to a set of gases and provides conduits for injecting the set of gases into the plasma processing chamber, the upper electrode assembly includes,
the electrode configured to be exposed to a plasma;
a heater plate disposed above said electrode, wherein said heater plate is configured to heat said electrode;
a backing plate disposed between the electrode and the heater plate, wherein the backing plate is configured to electrically isolate the electrode from the heating plate;
a cooling plate disposed above and in contact with said heater plate, wherein said cooling plate is configured to cool said electrode;
a plasma chamber lid configured to confine the plasma in the plasma chamber, wherein the plasma chamber lid includes, a ground and a clamp ring configured to connect the electrode to the plasma chamber lid, and a pocket formed by contacting together the clamp ring, an RF conductive gasket, and the electrode; and
an annular shield covering a bottom surface of the clamp ring, the annular shield including a lateral ledge that overlaps at a seam between the clamp ring and the electrode.

2. The upper electrode of claim 1 , wherein the RF conductive gasket is disposed between the clamp ring and the electrode to form an arrangement for an optimized RF return path to ground.

3. The upper electrode of claim 2 , wherein the pocket comprises a space for receiving the backing plate over the electrode, the heater plate over the backing plate, and the cooling plate over the heater plate.

4. The upper electrode of claim 3 , wherein no metal fasteners are used to couple together any one of the backing plate to the heater plate and the heater plate to the cooling plate when disposed in the space of the pocket.

5. The upper electrode of claim 1 , wherein the plasma processing chamber includes a lower electrode assembly configured to provide power to the plasma processing chamber to generate plasma from the set of gases disposed therein, wherein the lower electrode assembly includes a powered electrode configured to receive power from a set of (RF) generators positioned outside the plasma processing chamber and to provide power to the plasma processing chamber.

6. The upper electrode of claim 5 , wherein the plasma processing chamber is configured as a component of plasma processing system defined to be one of an atmospheric plasma processing system, a low-pressure plasma processing system, an inductively coupled plasma processing system or a capacitively coupled plasma processing system.

7. The upper electrode of claim 1 , wherein the upper electrode assembly comprises a showerhead.

8. The upper electrode of claim 1 , wherein the pocket of the upper electrode assembly comprises a configuration to allow longitudinal and lateral tolerances for thermal expansion of said set of components from repetitive thermal cycling.

9. The upper electrode of claim 1 , wherein the plasma chamber lid of the upper electrode assembly comprises:
a top plate;
a top cover; and
a plurality of fasteners;
wherein the top plate comprises the integral clamp ring,
wherein the plurality of fasteners couple the top plate to the top cover.

10. The upper electrode of claim 9 , wherein the top cover and electrode sub-assembly components disposed in the pocket of the upper electrode assembly comprise configurations to facilitate insertion or removal of electrode sub-assembly components from the pocket of the upper electrode assembly.

11. An upper electrode assembly configured to provide a ground path for a plasma processing chamber, the upper electrode assembly comprising,
an electrode configured to be exposed to a plasma when generated in the plasma processing chamber;
a heater plate disposed above said electrode, wherein said heater plate is configured to heat said electrode;
a backing plate disposed between the electrode and the heater plate, wherein the backing plate is configured to substantially electrically isolate the electrode from the heating plate;
a cooling plate disposed above and in contact with said heater plate, wherein said cooling plate is configured to cool said electrode;
a plasma chamber lid configured to enclose the plasma processing chamber, wherein the plasma chamber lid includes a ground connection and a clamp ring configured to secure the electrode to the plasma chamber lid, wherein a pocket formed by contacting together the clamp ring, an RF conductive gasket, and the electrode; and
an annular shield covering a portion of a bottom surface of the clamp ring, the annular shield including a lateral ledge that overlaps at a seam between the clamp ring and the electrode.

12. The upper electrode of claim 11 , wherein the RF conductive gasket is disposed between the clamp ring and the electrode to form an RF return path to ground when in operation.

13. The upper electrode of claim 12 , wherein the pocket comprises a space for receiving the backing plate over the electrode, the heater plate over the backing plate, and the cooling plate over the heater plate.

14. The upper electrode of claim 13 , wherein no metal fasteners are used to couple together any one of the backing plate to the heater plate and the heater plate to the cooling plate when disposed in the space of the pocket.

15. The upper electrode of claim 13 , wherein the plasma processing chamber includes a lower electrode assembly configured to provide power to the plasma processing chamber to generate the plasma from a set of gases.

16. The upper electrode of claim 15 , wherein the lower electrode assembly includes a powered electrode configured to receive power from at least one (RF) generator.

17. The upper electrode of claim 16 , wherein the at least one RF generator is positioned outside the plasma processing chamber.

18. The upper electrode of claim 11 , wherein the plasma chamber lid of the upper electrode assembly comprises:
a top plate;
a top cover; and
a plurality of fasteners;
wherein the top plate comprises the integral clamp ring,
wherein the plurality of fasteners couple the top plate to the top cover.

Assignees

• Lam Res Corp

Inventors

• Kholodenko Arnold
• Husain Anwar

Classifications

• H10P72/0421

  for drying etching · CPC title

• H01J37/32532 Primary

  Electrodes · CPC title

• H01J37/32091

  the radio frequency energy being capacitively coupled to the plasma · CPC title

• H01J37/32174

  Circuits specially adapted for controlling the RF discharge · CPC title

• H01J37/32082

  Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence) · CPC title