Substrate Processing Method, Apparatus, and System
US-2024363405-A1 · Oct 31, 2024 · US
US9905400B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9905400-B2 |
| Application number | US-201414516998-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 17, 2014 |
| Priority date | Oct 17, 2014 |
| Publication date | Feb 27, 2018 |
| Grant date | Feb 27, 2018 |
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A gas distribution plate for a plasma reactor has a dielectric front plate and a dielectric back plate bonded together, with gas injection orifices extending through the front plate and gas supply channels in the surface of front plate facing the back plate. The back plate is joined to a heat reflective plate, or the back plate itself is formed of a heat reflective material, such as Beryllium Oxide.
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What is claimed is: 1. A plasma reactor comprising: a process chamber comprising a side wall and a workpiece support in said process chamber; a gas distribution plate overlying said process chamber and comprising: a first dielectric front plate and a dielectric back plate joined to one another along facing surfaces, one of said facing surfaces comprising a first top surface of said first dielectric front plate; an array of plural gas supply channels formed in said first top surface and an array of gas injection orifices extending axially through said first dielectric front plate, said gas injection orifices intersecting said gas supply channels; a peripheral gas supply channel in said first top surface intersecting said gas supply channels, and a gas supply coupled to said peripheral gas supply channel; wherein said first dielectric front plate is formed of a first dielectric material and said back plate is formed of a second dielectric material; a power applicator overlying said gas distribution plate, and a power source coupled to said power applicator, each of said first and second dielectric materials being generally transparent to radiation from said power source; and a heat reflective plate adjacent to said back plate, the heat reflective plate having sufficient heat reflectivity to substantially block upward heat flow from reaching the power applicator. 2. The plasma reactor of claim 1 wherein said first and second dielectric materials are each at least 99% transmissive to radiation from said power source. 3. The plasma reactor of claim 1 wherein one or both of said first and second dielectric materials comprises quartz. 4. The plasma reactor of claim 2 wherein one or both of said first and second dielectric materials is quartz of a purity of at least 99%. 5. The plasma reactor of claim 1 wherein said dielectric front plate and said dielectric back plate are joined together by diffusion bonding. 6. The plasma reactor of claim 1 wherein said array of plural gas supply channels, said array of gas injection orifices and said peripheral gas supply channel have heights and widths not exceeding 0.1 mm. 7. The plasma reactor of claim 1 wherein said heat reflective plate comprises Beryllium Oxide. 8. A plasma reactor comprising: a process chamber comprising a side wall and a workpiece support in said process chamber; a gas distribution plate overlying said process chamber and comprising: a first dielectric front plate and a dielectric back plate joined to one another along facing surfaces, one of said facing surfaces comprising a first top surface of said first dielectric front plate; an array of plural gas supply channels formed in said first top surface and an array of gas injection orifices extending axially through said first dielectric front plate, said gas injection orifices intersecting said gas supply channels; a peripheral gas supply channel in said first top surface intersecting said gas supply channels, and a gas supply coupled to said peripheral gas supply channel; and a power applicator overlying said gas distribution plate, and a power source coupled to said power applicator, each of said first and second dielectric materials being generally transparent to radiation from said power source: wherein said first dielectric front plate is formed of a first dielectric material and said back plate is formed of a second dielectric material, and wherein said second dielectric material comprises a heat reflective material, the second dielectric material having sufficient heat reflectivity to substantially block upward heat flow from reaching the power applicator. 9. The plasma reactor of claim 1 wherein said second dielectric material comprises Beryllium Oxide. 10. The plasma reactor of claim 1 further comprising: a second dielectric front plate between said first dielectric front plate and said dielectric back plate, said second dielectric front plate comprising a second top surface facing said dielectric back plate; a second array of gas supply channels formed in said second top surface and a second array of gas injection orifices extending axially through said second dielectric front plate, said second array of gas injection orifices intersecting said second array of gas supply channels; a second peripheral gas supply channel in said second top surface intersecting said second array of gas supply channels, and a second gas supply coupled to said second peripheral gas supply channel; and wherein said second dielectric front plate is formed of a third dielectric material. 11. The plasma reactor of claim 10 wherein said third dielectric material comprises quartz. 12. The plasma reactor of claim 8 wherein said first and said second dielectric material are different materials. 13. The plasma reactor of claim 12 wherein said first dielectric material comprises quartz. 14. The plasma reactor of claim 12 wherein said second dielectric material comprises Beryllium Oxide. 15. The plasma reactor of claim 8 wherein said first and second dielectric materials are each at least 99% transmissive to radiation from said power source. 16. The plasma reactor of claim 1 wherein said heat reflective plate is formed of a different material than said first and said second dielectric materials. 17. The plasma reactor of claim 16 wherein said first and said second dielectric material are formed of the same material.
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