Method for structuring an object with the aid of a particle beam apparatus

Patent metadata

Field	Value
Publication number	US-9905395-B2
Application number	US-201514867304-A
Country	US
Kind code	B2
Filing date	Sep 28, 2015
Priority date	Sep 30, 2014
Publication date	Feb 27, 2018
Grant date	Feb 27, 2018

Abstract

Methods for structuring objects with a particle beam apparatus are disclosed.

First claim

The invention claimed is:

1. A method of structuring an object using at least one particle beam apparatus, the method comprising:
determining a first structure to be formed on a first object;
determining, based on the first structure, a first set of values of a plurality of first process parameters of the at least one particle beam apparatus;
forming the first structure on the first object using the at least one particle beam apparatus using the first set of values of the first process parameters;
determining a second structure to be formed on the first object, the second structure being assigned to the first structure and representing the first set of values of the first process parameters;
forming the second structure on the first object using the at least one particle beam apparatus;
determining a third structure to be formed on a second object;
detecting the second structure formed on the first object;
analysing the detected second structure and determining the first set of values of the first process parameters represented by the detected second structure;
determining a second set of values of the plurality of first process parameters based on the determined first set of values of the first process parameters; and
forming the third structure on the second object using the at least one particle beam apparatus using the second set of values of the first process parameters.

2. The method of claim 1 , wherein the at least one particle beam apparatus comprises an ion beam apparatus and/or an electron beam apparatus.

3. The method of claim 2 , wherein the plurality of process parameters comprise at least one of the following:
a parameter describing the particle beam used for forming the first structure;
a parameter a describing a geometry of the first structure;
a parameter describing a writing field size used when forming the first structure;
a parameter describing a particle dose used for forming the first structure;
a parameter describing a spacing of scanning points used when forming the first structure;
a parameter describing a scan strategy used when forming the first structure;
a parameter describing a duration of a scan pass that is used when forming the first structure, the scan pass being carried out repeatedly;
a parameter describing a number of scan passes carried out repeatedly when forming the first structure;
a parameter describing a pause between successive scan processes that are used for forming the first structure;
a parameter describing a process gas used when forming the first structure;
a parameter describing a position of the first object relative to the particle beam apparatus used for forming the first structure;
a parameter describing a orientation of the first object relative to the particle beam apparatus used for forming the first structure;
a parameter describing a vacuum pressure in a vacuum space containing the first object when forming the first structure;
a parameter describing a gas flow for avoiding charging of the first object when forming the first structure;
a parameter describing a temperature of the first object when forming the first structure;
a parameter describing an electrical potential of the first object relative to the particle beam apparatus when forming the first structure;
a parameter describing a crystal orientation of the first object relative to the particle beam apparatus when forming the first structure; and
a parameter describing a change in a focus setting of the particle beam apparatus during the process of forming the first structure.

4. The method of claim 3 , wherein the second structure comprises at least member selected from the group consisting of an identification symbol for a plurality of predetermined parameters and an identification symbol of the particle beam apparatus used for forming the first structure.

5. The method of claim 3 , wherein the at least one parameter describing the particle beam used for forming the first structure comprises at least one of the following:
a parameter describing a kinetic energy of the particles of the particle beam that impinge on the object;
a parameter describing a beam current of the particle beam;
a parameter describing a diameter of the particle beam impinging on the object; and
a parameter describing a working distance between the first object and the particle beam apparatus.

6. The method of claim 3 , wherein the at least one parameter describing the process gas used when forming the first structure comprises at least one of the following:
a parameter describing a chemical composition of the process gas;
a parameter describing a pressure of the process gas; and
a parameter describing a mass flow rate of the process gas.

7. The method of claim 3 , further comprising:
determining a multiplicity of sets of values of the first process parameters, wherein each set of values differs from each other set of values with regard to at least one of the values;
forming a multiplicity of the first structures on the first object, wherein each of the structures is formed using a different set of values of the first process parameter; and
forming a multiplicity of the second structures on the first object, wherein each of the second structures represents a different set of the values of the process parameters.

8. The method of claim 3 , further comprising forming a multiplicity of first structures on one or more first objects using different first sets of the values of the first process parameters, wherein the method comprises:
detecting the multiplicity of the first structures;
comparing the detected first structures with the third structure to be formed on the second object, and selecting one of the first structures; and
detecting the second structure assigned to the selected first structure, wherein a plurality of the second structures which are not assigned to selected first structures are not detected.

9. The method of claim 1 , wherein the plurality of process parameters comprise at least one of the following:
a parameter describing the particle beam used for forming the first structure;
a parameter a describing a geometry of the first structure;
a parameter describing a writing field size used when forming the first structure;
a parameter describing a particle dose used for forming the first structure;
a parameter describing a spacing of scanning points used when forming the first structure;
a parameter describing a scan strategy used when forming the first structure;
a parameter describing a duration of a scan pass that is used when forming the first structure, the scan pass being carried out repeatedly;
a parameter describing a number of scan passes carried out repeatedly when forming the first structure;
a parameter describing a pause between successive scan processes that are used for forming the first structure;
a parameter describing a process gas used when forming the first structure;
a parameter describing a position of the first object relative to the particle beam apparatus used for forming the first structure;
a parameter describing a orientation of the first object relative to the particle beam apparatus used for forming the first structure;
a parameter describing a vacuum pressure in a vacuum space containing the first object when forming the first structure;
a parameter describing a gas flow for avoiding charging of the first object when forming the first structure;
a parameter describing a temperature of the first object when forming the first structure;
a parameter describing an electrical potential of the first object relative to the particle beam apparatus when forming the first structure;
a parameter describing a crystal orientation

Assignees

• Zeiss Carl Microscopy Gmbh

Inventors

• Stegmaier Simon

Classifications

• C23C16/52

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• C23C16/047

  using irradiation by energy or particles · CPC title

• H01J2237/3174

  Etching microareas · CPC title

• H01J37/304 Primary

  Controlling tubes by information coming from the objects {or from the beam}, e.g. correction signals · CPC title

• H01J2237/30433

  System calibration · CPC title