Method of reducing the dimension of an imprint structure on a substrate

Patent metadata

Field	Value
Publication number	US-9904165-B2
Application number	US-84995410-A
Country	US
Kind code	B2
Filing date	Aug 4, 2010
Priority date	Aug 4, 2009
Publication date	Feb 27, 2018
Grant date	Feb 27, 2018

Abstract

A method of reducing the dimension of an imprint structure on a substrate, the method comprising the steps of:
(a) providing a substrate having at least one imprint structure thereon, said structure being formed of an inorganic-organic compound comprising an inorganic moiety and a polymer moiety, said polymer moiety having a lower vaporization temperature than the melting point of said inorganic moiety; and (b) selectively removing at least part of the polymer moiety while enabling at least part of the inorganic moiety to form a substantially continuous inorganic phase in said imprint structure, wherein the removal of the at least part of the polymer moiety from the imprint structure reduces the dimension of the imprint structure.

First claim

The invention claimed is:

1. A method of reducing a dimension of an imprint structure on a substrate, the method comprising the steps of:
(a) coating a monomer-composite composition comprising an admixture of a polymerizable monomeric composition and an inorganic moiety on said substrate;
(b) contacting a mold having an imprint-forming surface with said monomer-composite composition, wherein said substrate and said mold are not the same;
(c) polymerizing said monomer-composite composition while in contact with said mold to form an imprint structure formed of an inorganic-organic compound comprising said inorganic moiety and a polymer moiety, said polymer moiety having a lower vaporization temperature than the melting point of said inorganic moiety on said substrate;
(d) removing said mold from said imprint structure; and
(e) selectively removing at least part of the polymer moiety while enabling at least part of the inorganic moiety to form a substantially continuous inorganic phase in said imprint structure, wherein the removal of the at least part of the polymer moiety from the imprint structure reduces the dimension of the imprint structure,
wherein said inorganic moiety does not include silicon.

2. The method as claimed in claim 1 , wherein the selectively removing step (e) comprises the step of heating said imprint structure.

3. The method as claimed in claim 1 or 2 , wherein the inorganic moiety is substantially homogenously dispersed throughout said polymer moiety.

4. The method as claimed in claim 1 , comprising the step of providing said polymer moiety being comprised of at least one of an allyl, a vinyl or an acrylate polymer.

5. The method as claimed in claim 1 , wherein the inorganic moiety comprises at least one of a metal or metalloid.

6. The method as claimed in claim 5 , wherein the metal or metalloid is selected from the group consisting of Titanium, Zirconium, Niobium, Tantalum, Iron, Copper, Silver, and Zinc.

7. The method as claimed in claim 1 , wherein the imprint structure is:
(i) a generally elongate imprint having a length dimension parallel to a longitudinal axis that is generally parallel to said substrate, said length dimension being defined between a proximal end and a distal end; or
(ii) a projection having a longitudinal axis that is generally normal to said substrate and wherein the projection extends from a proximal end from said substrate to a distal end.

8. The method as claimed in claim 7 , wherein the length dimension is at least two folds greater than the width dimension of the imprint.

9. The method as claimed in claim 1 , wherein, after said selectively removing step, the imprint structure has at least one of the following properties:
(i) the imprint structure has substantially the same aspect ratio as the imprint before the selectively removing step; and/or
(ii) the imprint structure has a dimension that is reduced by at least 30% of the dimension of the imprint structure before said selectively removing step.

10. The method as claimed in claim 1 , wherein an array of imprints is disposed on said substrate.

11. The method as claimed in claim 10 , wherein the array is an ordered array of a series of rows and columns of imprints being disposed on said substrate at an approximately equal distance from each other.

12. The method as claimed in claim 7 , wherein each imprint has a centre point defined along a central longitudinal axis and between said proximal and distal ends, and wherein the center point between adjacent imprints does not substantially change during said selectively removing step.

13. The method as claimed in claim 1 , wherein said polymerizing step is undertaken at a temperature of from 60 degrees Celsius to 150 degrees Celsius.

14. The method as claimed in claim 1 , wherein the polymerizing step is carried out in the presence of ultra-violet radiation.

15. The method as claimed in claim 1 , wherein the selectively removing step is carried out at a temperature of from 300 degrees Celsius to 900 degrees Celsius.

16. The method as claimed in claim 1 , wherein the imprint after said selectively removing step has a dimension in the nanoscale size range.

17. The method as claimed in claim 1 , comprising the step of providing a minimum amount of inorganic moiety in the inorganic-organic compound such that after said polymer moiety has been selectively removed, the shape of the imprint is substantially the same.

18. The method as claimed in claim 17 , wherein the step of providing a minimum amount of inorganic moiety in the inorganic-organic compound comprises reacting an inorganic compound with at least one of an allyl, a vinyl, a methacrylic or an acrylic acid in a molar ratio of about 1:8 to about 1:2.

19. The method as claimed in claim 18 , wherein the inorganic compound is at least one of a metal alkoxide and a metalloid alkoxide.

Assignees

• Saifullah M S M
• Hussain Hazrat
• Lim Suhui
• Low Hong Yee
• Loh Wei Wei
• Agency Science Tech & Res

Inventors

• Saifullah M S M
• Hussain Hazrat
• Lim Suhui
• Low Hong Yee
• Loh Wei Wei

Classifications

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• B29C43/021

  characterised by the shape of the surface · CPC title

• B29C2043/025

  forming a microstructure, i.e. fine patterning · CPC title

• G03F7/0002 Primary

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title