Manufacturing method for COA substrate

Patent metadata

Field	Value
Publication number	US-9904128-B2
Application number	US-201615023692-A
Country	US
Kind code	B2
Filing date	Jan 29, 2016
Priority date	Dec 17, 2015
Publication date	Feb 27, 2018
Grant date	Feb 27, 2018

Abstract

The disclosure provides a manufacturing method for COA substrate: utilizing PEDOT, PProDOT or PEDOT derivatives with or without doping with graphene, or PProDOT derivatives replaces traditional ITO to be conductive materials of pixel electrodes; quantum dots can be modified by ProDOT derivatives or EDOT derivatives which including carboxyl group, and quantum dot color filters of red filter layers, green filter layer and blue filters layers comprised on the TFT substrate are formed by the method of electric chemical deposition based on a property of the aforementioned two being able to polymerize under influences of electric field and pixel electrode patterns on the TFT substrate. Therefore, zero waste can be achieved in quantum dots, a usage of quantum dots can be decreased, indium usage can be decreased, researching and development cost can be reduced, and the circumstances can be protected, furthermore, the QDs color film having the better bonding strength bonds the counter electrode layer through chemical bond, and avoids adverse results as a peel is caused by insufficient bonding strength between photoresist and substrate.

First claim

The invention claimed is:

1. A manufacturing method for COA substrate, comprising following steps:
step 1. providing a TFT substrate which comprises a base substrate, a TFT layer disposed on the base substrate and a pixel electrode layer disposed on the TFT layer, wherein, the pixel electrode layer comprises a plurality of red subpixel electrodes, a plurality of green subpixel electrodes and a plurality of blue subpixel electrodes arranged in intervals;
wherein, materials of the pixel electrode layer are PEDOT, PProDOT or PEDOT derivatives with or without doping with graphene, or PProDOT derivatives;
forming a block array inside interval regions of the plurality of red subpixel electrodes, green subpixel electrodes and blue subpixel electrodes located on the TFT layer;

step 2. providing a counter electrode layer, a reference electrode, a first electrolytic solution, a second electrolytic solution and a third electrolytic solution; the counter electrode layer comprises an insulating substrate and a plurality of counter electrode layer units disposed on the insulating substrate, and the counter electrode layer units are respectively disposed in corresponding to the plurality of red, green and blue subpixel electrodes; the first electrolytic solution is an organic electrolytic solution of red quantum dot which is modified by a modifier, the second electrolytic solution is an organic electrolytic solution of green quantum dot which is modified by a modifier, and the third electrolytic solution is organic electrolytic solution of scattering particles which are modified by a modifier; the reference electrode is processed calibration via ferrocene before being utilized;
the chemical structural formulas of the modifier is:

wherein, all R 1 , R 2 , R 3 are hydrocarbyl groups containing 1 to 20 carbon atoms;
step 3. immersing the counter electrode layer, the reference electrode and the TFT substrate into the first electrolytic solution simultaneously, controlling circuit via connecting to the TFT substrate, the counter electrode layer and the reference electrode by wires, and applying positive voltages to all red subpixel electrodes on the TFT substrate; under oxidation of a positive electric field after being powered on, the modifier on the red quantum dot inside the first electrolytic solution nearby the red subpixel electrodes on the TFT substrate undergoes crosslinking reaction with the red subpixel electrodes, and each modifier undergoes crosslinking reaction with each other at the same time to deposit the red quantum dot on the red subpixel electrodes for further forming several red filter layers on several red subpixel electrodes; controlling electric chemical depositing time to have the thicknesses of the red filter layers achieved to a certain amount, and then being powered off to obtain the TFT substrate, the counter electrode layer and the reference electrode, and then cleaning the TFT substrate, the counter electrode layer and the reference electrode with organic solution;
step 4 immersing the counter electrode layer, the reference electrode and the TFT substrate into the second electrolytic solution simultaneously, controlling circuit via connecting to the TFT substrate, the counter electrode layer and the reference electrode by wires, and applying positive voltages to all green subpixel electrodes on the TFT substrate; under oxidation of a positive electric field after being powered on, the modifier on the green quantum dot inside the second electrolytic solution nearby the green subpixel electrodes on the TFT substrate undergoes crosslinking reaction with the green subpixel electrodes, and each modifier undergoes crosslinking reaction with each other at the same time to deposit the green quantum dot on the green subpixel electrodes for further forming several green filter layers on several green subpixel electrodes;
controlling electric chemical depositing time to have the thicknesses of the green filter layers achieved to a certain amount, and then being powered off to obtain the TFT substrate, the counter electrode layer and the reference electrode, and then cleaning the TFT substrate, the counter electrode layer and the reference electrode with organic solution;
step 5 immersing the counter electrode layer, the reference electrode and the TFT substrate into the third electrolytic solution simultaneously, controlling circuit via connecting to the TFT substrate, the counter electrode layer and the reference electrode by wires, and applying positive voltages to all blue subpixel electrodes on the TFT substrate; under oxidation of a positive electric field after being powered on, the modifier on the scattering particles inside the third electrolytic solution nearby the blue subpixel electrodes on the TFT substrate undergoes crosslinking reaction with the blue subpixel electrodes, and each modifier undergoes crosslinking reaction with each other at the same time to deposit the scattering particles on the blue subpixel electrodes for further forming several blue filter layers on several blue subpixel electrodes; controlling electric chemical depositing time to have the thicknesses of the blue filter layers achieved to a certain amount, and then being powered off to obtain the TFT substrate, the counter electrode layer and the reference electrode, and then cleaning the TFT substrate, the counter electrode layer and the reference electrode with organic solution;
the step 3., step 4. and step 5 are processed randomly; after processing step 3.˜step 5., a quantum dot color filter of several red filter layers, several green filter layers and glue filter layers can be obtained for further manufacturing a COA substrate.

2. A manufacturing method for COA substrate according to claim 1 , wherein, materials of the pixel electrode layer are PEDOT with doping with graphene; the chemical structural formula of the modifier is:

wherein, R 1 is CH 3 , R2 is CH 2 , R 3 is

3. A manufacturing method for COA substrate according to claim 1 , wherein, diameters of the red quantum dot, the green quantum dot and the scattering particles are 2 nm˜10 nm, the red quantum dot is an InP quantum dot covered by ZnS; the green quantum dot is an InAs quantum dot covered by ZnS; the scattering particles dot are white, blue or transparent particles.

4. A manufacturing method for COA substrate according to claim 1 , wherein, during the electric depositing process in the step 3. to step 5., the positive potential applying to the red/green/blue subpixel electrodes on the TFT substrate is a stable potential of the reference electrode in a constant voltage of 0.7V˜2V with applying time of 0.1 s˜100 min.

5. A manufacturing method for COA substrate according to claim 1 , wherein, during the electric depositing process in the step 3. to step 5., the positive potential applying to the red/green/blue subpixel electrodes on the TFT substrate is the highest voltage which is a pulsed electrical potential of 0.7V˜2V with applying time of 0.1 s˜100 min.

6. A manufacturing method for COA substrate according to claim 5 , wherein, during the electric depositing process in the step 3. to step 5., the positive potential applying to the red/green/blue subpixel electrodes on the TFT substrate is a square wave pulse with a wave crest of 1.1V, a crest time of 0.1 s, a wave trough of 0.4V and a trough time of is in repeating 15 times.

7. A manufacturing method for COA substrate acco

Assignees

• Shenzhen China Star Optoelect

Inventors

• Deng Weijia

Classifications

• H01L27/1259

  Electricity · mapped topic

• G02F1/13439 Primary

  characterised by their electrical, optical, physical properties; materials therefor; method of making · CPC title

• G02F1/1368

  in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title

• G02F1/133516

  Methods for their manufacture, e.g. printing, electro-deposition or photolithography · CPC title

• C09K11/02 Primary

  Use of particular materials as binders, particle coatings or suspension media therefor · CPC title