Photonic crystal sensor structure and a method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9903816-B2
Application number	US-201414557584-A
Country	US
Kind code	B2
Filing date	Dec 2, 2014
Priority date	Dec 2, 2014
Publication date	Feb 27, 2018
Grant date	Feb 27, 2018

Abstract

A sensor and methods of making a sensor are disclosed. The sensor may include a substrate, an optical source, an optical detector, a plurality of optical cavities in the substrate or in a layer structure over the substrate, where the plurality of optical cavities may be arranged in an optical path between the optical source and the optical detector, and a processing circuit coupled to the optical detector and configured to receive a signal representing an optical signal received by the optical detector.

First claim

What is claimed is:

1. A gas sensor, comprising:
a substrate;
an optical source;
an optical detector;
at least one photonic crystalline structure in the substrate or in a layer structure over the substrate, the at least one photonic crystalline structure comprising
a plurality of optical cavities in the substrate or in a layer structure over the substrate, each cavity substrate having a hollow interior portion, wherein the hollow interior portions are not in gas communication with each other;
wherein the plurality of optical cavities is arranged in an optical path between the optical source and the optical detector; and
a gas detector coupled to the optical detector and configured to receive a signal representing an optical signal received by the optical detector and to determine if one or more predefined gases are present in the plurality of optical cavities based on the received signal.

2. The gas sensor of claim 1 ,
wherein the optical source is configured to generate an optical source signal transmitted to the optical detector.

3. The gas sensor of claim 1 , further comprising:
a first pair of contact pads formed over the substrate and electrically coupled to the optical source and a second pair of contact pads formed over the substrate and electrically coupled to the optical detector.

4. The gas sensor of claim 1 ,
wherein the optical source comprises a first semiconductor diode; and
wherein the optical detector comprises a second semiconductor diode.

5. The gas sensor of claim 1 ,
wherein the plurality of optical cavities comprises a perforation in the substrate with a series of plate-like structures partitioning the perforation.

6. A method of forming a sensor, the method comprising:
forming a substrate;
providing an optical source;
providing an optical detector;
forming at least one photonic crystalline structure in the substrate or in a layer structure over the substrate, the at least one photonic crystalline structure comprising a plurality of optical cavities in the substrate or in a layer structure over the substrate, each cavity substrate having a hollow interior portion, wherein the hollow interior portions are not in gas communication with each other;
arranging the plurality of optical cavities in an optical path between the optical source and the optical detector; and
coupling a processing device to the optical detector and configuring said processing device to receive a signal representing an optical signal received by the optical detector.

7. The method of claim 6 , further comprising:
forming a first pair of contact pads over the substrate and electrically coupling the first pair of contact pads to the optical source and forming a second pair of contact pads over the substrate and electrically coupling the second pair of contact pads to the optical detector.

8. The method of claim 6 , further comprising:
forming one photonic crystalline structure comprising the plurality of optical cavities.

9. The gas sensor of claim 1 , comprising a plurality of photonic crystalline structures, each of the plurality of photonic crystalline structures comprising one of the plurality of optical cavities.

10. The gas sensor of claim 9 , wherein the plurality of photonic crystalline structures comprises photonic crystals of varying dimensions.

11. The gas sensor of claim 1 , comprising one photonic crystalline structure comprising the plurality of optical cavities.

12. The gas sensor of claim 1 , wherein the at least one photonic crystalline structure comprises a one-dimensional photonic crystalline structure.

13. The gas sensor of claim 1 , wherein the at least one photonic crystalline structure comprises a two-dimensional photonic crystalline structure.

14. The gas sensor of claim 1 , wherein the at least one photonic crystalline structure comprises a three-dimensional photonic crystalline structure.

15. The gas sensor of claim 1 , wherein the hollow interior portion of each of the plurality of optical cavities is filled with a gaseous substance.

16. The gas sensor of claim 1 , wherein the hollow interior portion of each of the plurality of optical cavities is filled with a fluid.

17. The gas sensor of claim 1 , wherein the hollow interior portion of each of the plurality of optical cavities is gas tight.

18. The method of claim 6 , further comprising:
forming a plurality of photonic crystalline structures, each of the plurality of photonic crystalline structures comprising one of the plurality of optical cavities.

19. The method of claim 17 , wherein the plurality of photonic crystalline structures comprises photonic crystals of varying dimensions.

20. The method of claim 6 , further comprising:
forming one photonic crystalline structure comprising the plurality of optical cavities.

21. The method of claim 6 , wherein the hollow interior portion of each of the plurality of optical cavities is filled with a gaseous substance.

22. The method of claim 6 , wherein the hollow interior portion of each of the plurality of optical cavities is filled with a fluid.

23. The method of claim 6 , further comprising:
forming the hollow interior portion of each of the plurality of optical cavities by laser drilling.

24. The method of claim 6 , wherein the hollow interior portion of each of the plurality of optical cavities is gas tight.

Assignees

• Infineon Technologies Ag

Inventors

• Silvano De Sousa Jonathan
• Grille Thomas
• Hedenig Ursula
• Neidhart Thomas
• Irsigler Peter
• Rajaraman Vijaye Kumar

Classifications

• G01K11/00

  Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 · CPC title

• G01N21/59 Primary

  Transmissivity (G01N21/25 takes precedence) · CPC title

• G02B6/12004

  Combinations of two or more optical elements · CPC title

• G02B6/125

  Bends, branchings or intersections · CPC title

• G02B2006/12166

  Manufacturing methods · CPC title