Composition for forming silica based layer, and method for manufacturing silica based layer

Patent metadata

Field	Value
Publication number	US-9902873-B2
Application number	US-201414561996-A
Country	US
Kind code	B2
Filing date	Dec 5, 2014
Priority date	May 26, 2014
Publication date	Feb 27, 2018
Grant date	Feb 27, 2018

Abstract

A composition for forming a silica based layer and a method for manufacturing a silica based layer, the composition including a silicon-containing compound, the silicon-containing compound including a hydrogenated polysilazane moiety, a hydrogenated polysiloxazane moiety, or a combination thereof, and a solvent, wherein a number of particles of the silicon-containing compound in the composition and having a particle diameter of about 0.2 μm to about 1 μm is less than or equal to about 10/ml.

First claim

What is claimed is:

1. A composition for forming a silica based layer, the composition comprising:
a silicon-containing compound, the silicon-containing compound including a hydrogenated polysilazane moiety, a hydrogenated polysiloxazane moiety, or a combination thereof, and
a solvent, wherein:
a number of particles of the silicon-containing compound in the composition and having a particle diameter of about 0.2 μm to about 1 μm is less than or equal to 10/ml,
the silicon-containing compound has a weight average molecular weight of about 22,000 to about 200,000, and
the composition provides a film having a tetramethyl ammonium hydroxide (TMAH) wet etch rate of 100 or below as calculated according to the following Calculation Equation 1:
TMAH wet etch rate=decreased film thickness in Å/weight average molecular weight.  [Calculation Equation 1]

2. The composition for forming a silica based layer as claimed in claim 1 , wherein the number of particles of the silicon-containing compound in the composition and having a particle diameter of about 0.2 μm to about 1 μm is less than or equal to about 8/ml.

3. The composition for forming a silica based layer as claimed in claim 1 , wherein the silicon-containing compound includes a moiety represented by the following Chemical Formula 1:

wherein, in the above Chemical Formula 1, R 1 to R 3 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 arylalkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted alkoxy group, a carboxyl group, an aldehyde group, a hydroxy group, or a combination thereof.

4. The composition for forming a silica based layer as claimed in claim 3 , wherein the silicon-containing compound further includes a moiety represented by the following Chemical Formula 2:

wherein, in the above Chemical Formula 2, R 4 to R 7 are each independently hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C7 to C30 arylalkyl group, a substituted or unsubstituted C1 to C30 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 alkenyl group, a substituted or unsubstituted alkoxy group, a carboxyl group, an aldehyde group, a hydroxy group, or a combination thereof.

5. The composition for forming a silica based layer as claimed in claim 4 , wherein the silicon-containing compound includes a moiety represented by the following Chemical Formula 3 at a terminal end thereof and in an amount of about 15 to about 35 wt %, based on a total amount of a Si—H bond of the silicon-containing compound,
*—SiH 3 .  [Chemical Formula 3]

6. The composition for forming a silica based layer as claimed in claim 4 , wherein the silicon-containing compound has an oxygen content of about 0.2 to about 3 wt %, based on a total weight of the silicon-containing compound.

7. The composition for forming a silica based layer as claimed in claim 3 , wherein the silicon-containing compound includes a moiety represented by the following Chemical Formula 3 at a terminal end thereof and in an amount of about 15 to about 35 wt %, based on a total amount of a Si—H bond of the silicon-containing compound,
*—SiH 3 .  [Chemical Formula 3]

8. A method for manufacturing a silica based layer, the method comprising:
coating the composition for forming a silica based layer as claimed in claim 1 on the substrate,
drying the substrate coated with the composition for forming a silica based layer, and
curing the substrate under an inert atmosphere at a temperature of greater than or equal to about 200° C.

9. The method as claimed in claim 8 , wherein coating the composition for forming a silica based layer on the substrate includes performing a spin-on coating method.

10. The composition for forming a silica based layer as claimed in claim 1 , wherein, when a 10 ml sample of the composition is purged three times with a dibutyl ether (DBE) solution, then the resulting composition is put in a 100 ml bottle and then purged three times again, the number of particles of the silicon-containing compound in the composition and having a particle diameter of about 0.2 μm to about 1 μm is less than or equal to 10/ml.

Assignees

• Samsung Sdi Co Ltd

Inventors

• Bae Jin Hee
• Kwak Taek Soo
• Lee Han Song
• Cho Youn Jin
• Hwang Byeong Gyu
• Kim Bo Sun
• Park Sae Mi
• Park Eun Su
• Seo Jin Woo
• Lim Wan Hee
• Jang Jun Young
• Han Kwen Woo

Classifications

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6689

  the compound being a silazane · CPC title

• H10P14/6686

  the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane · CPC title

• H10P14/6529

  by exposure to a gas or vapour · CPC title

• H10P14/6522

  introduced into a nitride material, e.g. changing SiN to SiON · CPC title