Method of making a piezoelectric film

Patent metadata

Field	Value
Publication number	US-9902153-B2
Application number	US-201514805739-A
Country	US
Kind code	B2
Filing date	Jul 22, 2015
Priority date	Jul 28, 2014
Publication date	Feb 27, 2018
Grant date	Feb 27, 2018

Abstract

A method of making a piezoelectric film includes forming a PbTO 3 (PTO) coating film by applying a precursor liquid of a coating film containing PTO as a main ingredient, forming a PTO amorphous layer containing lead titanate as a main ingredient by heating the PTO coating film at a heating temperature lower than a crystallization temperature at which the PTO coating film is crystalized, and forming, on the PTO amorphous layer, a piezoelectric thin-film layer having a main (100) orientation measured by X-ray analysis and containing lead zirconate titanate (PZT) as a main ingredient. The heating temperature is 300° C. or lower.

First claim

What is claimed is:

1. A method of making a piezoelectric film, comprising:
(a) forming a PbTO 3 (PTO) coating film by applying a precursor liquid of a coating film containing PTO as a main ingredient, on a substrate;
(b) forming a PTO amorphous layer containing lead titanate as a main ingredient by heating the PTO coating film, formed in (a), at a heating temperature lower than a crystallization temperature at which the PTO coating film is crystalized, the heating temperature being 300° C. or lower; and
(c) forming, on the PTO amorphous layer formed in (b), a piezoelectric thin-film layer having a main (100) orientation measured by X-ray analysis and containing lead zirconate titanate (PZT) as a main ingredient.

2. The method according to claim 1 , wherein a ratio of the main (100) orientation of the piezoelectric thin-film layer formed in (c) is 90% or higher.

3. The method according to claim 1 , wherein the heating temperature in (b) is not lower than a temperature corresponding to a first absorption peak of a differential thermal analysis (DTA) curve of the precursor liquid.

4. The method according to claim 1 , wherein the heating temperature in (b) is not lower than 50° C. and not higher than 120° C.

5. The method according to claim 1 , wherein the forming the piezoelectric thin-film layer in (c) includes forming the piezoelectric thin-film layer by laser sintering.

6. A method of making a piezoelectric element, comprising forming an electrode on the piezoelectric film made by the method according to claim 1 to form the piezoelectric element.

7. A method of making a liquid discharge head including making a piezoelectric element by performing the method according to claim 6 .

Assignees

• Chen Xianfeng
• Ricoh Co Ltd

Inventors

• Chen Xianfeng

Classifications

• H01L41/318

  Electricity · mapped topic

• B41J2/164

  thin film formation · CPC title

• B41J2/161 Primary

  of film type, deformed by bending and disposed on a diaphragm · CPC title

• B41J2/14233

  of film type, deformed by bending and disposed on a diaphragm · CPC title

• H10N30/078

  by sol-gel deposition · CPC title