Organic thin film transistor

US9899605B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9899605-B2
Application numberUS-201514865649-A
CountryUS
Kind codeB2
Filing dateSep 25, 2015
Priority dateMar 27, 2013
Publication dateFeb 20, 2018
Grant dateFeb 20, 2018

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

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An organic thin film transistor containing a compound represented by the formula (1) in a semiconductor active layer has a high carrier mobility, a small change in the threshold voltage after repeated driving and a high solubility in an organic solvent. A 1 and A 2 represent S, O or Se; at least one of R 1 to R 6 represents a substituent represented by *-L-R wherein L represents a divalent linking group and R represents a hydrogen atom, an alkyl group, an oligooxyethylene group, an oligosiloxane group or a trialkylsilyl group.

First claim

Opening claim text (preview).

What is claimed is: 1. A compound represented by the following formula (1): wherein in the formula (1), A 1 and A 2 each independently represent a sulfur atom, an oxygen atom or a selenium atom; and R 1 to R 6 each independently represent a hydrogen atom or a substituent, provided that at least one of R 1 to R 6 represents a substituent represented by the following formula (W): *-L-R  Formula (W) wherein in the formula (W), * represents a position bonded to a naphthalene ring in the formula (1), or bonded to a ring containing A 1 or a ring containing A 2 ; L represents a divalent linking group represented by any one of the following formulae (L-1) to (L-10), or a divalent linking group consisting of 2 or more divalent linking groups each represented by any one of the following formulae (L-1) to (L-10) in which the 2 or more divalent linking groups are bonded sequentially; and R represents a hydrogen atom, a substituted or unsubstituted alkyl group, an oligooxyethylene group having a repeating number of an oxyethylene unit of 2 or more, an oligosiloxane group having 2 or more silicon atoms, or a substituted or unsubstituted trialkylsilyl group, provided that R represents a hydrogen atom only when L is represented by any one of the formulae (L-1) to (L-3) and (L-8) to (L-10), and R represents a substituted or unsubstituted trialkylsilyl group only when L bonded to R is a divalent linking group represented by the following formula (L-3); wherein in the formulae (L-1) to (L-10), the wavy line represents a position bonded to any one of a naphthalene ring, a ring containing A 1 and a ring containing A 2 ; and * represents a position bonded to R in the formula (W); in the formula (L-8), m represents 4; in the formulae (L-9) and (L-10), m represents 2; in the formulae (L-1), (L-2), (L-8), (L-9) and (L-10), R′ each independently represents a hydrogen atom or a substituent, provided that, in the formulae (L-1) and (L-2), R′ each independently may form a condensed ring with R bonded to L. 2. The compound according to claim 1 , wherein at least one of R 1 and R 2 in the formula (1) represents a substituent represented by the formula (W). 3. The compound according to claim 1 , wherein the compound represented by the formula (1) is a compound represented by the following formula (2): wherein in the formula (2), A 1 and A 2 each independently represent a sulfur atom, an oxygen atom or a selenium atom; R 2 to R 6 each independently represent a hydrogen atom or a substituent; L a represents a divalent linking group represented by any one of the following formulae (L-1) to (L-10), or a divalent linking group consisting of 2 or more divalent linking groups each represented by any one of the following formulae (L-1) to (L-10) in which the 2 or more divalent linking groups are bonded sequentially; and R a represents a hydrogen atom, a substituted or unsubstituted alkyl group, an oligooxyethylene group having a repeating number of an oxyethylene unit of 2 or more, an oligosiloxane group having 2 or more silicon atoms, or a substituted or unsubstituted trialkylsilyl group, provided that R a represents a hydrogen atom only when L a is represented by any one of the formulae (L-1) to (L-3) and (L-8) to (L-10), and R a represents a substituted or unsubstituted trialkylsilyl group only when L a bonded to R a is a divalent linking group represented by the following formula (L-3); wherein in the formulae (L-1) to (L-10), the wavy line represents a position bonded to any one of a naphthalene ring, a ring containing A 1 and a ring containing A 2 ; and * represents a position bonded to R a ; in the formula (L-8), m represents 4; in the formulae (L-9) and (L-10), m represents 2; in the formulae (L-1), (L-2), (L-8), (L-9) and (L-10), R′ each independently represents a hydrogen atom or a substituent, provided that, in the formulae (L-1) and (L-2), R′ each independently may form a condensed ring with R bonded to L. 4. The compound according to claim 1 , wherein the compound represented by the formula (1) is a compound represented by the following formula (3): wherein in the formula (3), A 1 and A 2 each independently represent a sulfur atom, an oxygen atom or a selenium atom; R 3 to R 6 each independently represent a hydrogen atom or a substituent; L b and L c each independently represent a divalent linking group represented by any one of the following formulae (L-1) to (L-10), or a divalent linking group consisting of 2 or more divalent linking groups each represented by any one of the following formulae (L-1) to (L-10) in which the 2 or more divalent linking groups are bonded sequentially; and R b and R c each independently represent a hydrogen atom, a substituted or unsubstituted alkyl group, an oligooxyethylene group having a repeating number of an oxyethylene unit of 2 or more, an oligosiloxane group having 2 or more silicon atoms, or a substituted or unsubstituted trialkylsilyl group, provided that R b and R c represent a hydrogen atom only when L b and L c are represented by any one of the formulae (L-1) to (L-3) and (L-8) to (L-10), and R b and R c represent a substituted or unsubstituted trialkylsilyl group only when L b and L c each bonded to R b and R c are a divalent linking group represented by the following formula (L-3); wherein in the formulae (L-1) to (L-10), the wavy line represents a position bonded to any one of a naphthalene ring, a ring containing A 1 and a ring containing A 2 ; and * represents a position bonded to R b or R c ; in the formula (L-8), m represents 4; in the formulae (L-9) and (L-10), m represents 2; in the formulae (L-1), (L-2), (L-8), (L-9) and (L-10), R′ each independently represents a hydrogen atom or a substituent, provided that, in the formulae (L-1) and (L-2), R′ each independently may form a condensed ring with R bonded to L. 5. The compound according to claim 1 , wherein R 3 to R 6 in the formula (1) each independently represent a hydrogen atom, a fluorine atom, a substituted or unsubstituted alkyl group having from 1 to 3 carbon atoms, a substituted or unsubstituted alkynyl group having from 2 to 3 carbon atoms, a substituted or unsubstituted alkenyl group having from 2 to 3 carbon atoms, a substituted or unsubstituted alkoxy group having from 1 to 2 carbon atoms, or a substituted or unsubstituted methylthio group. 6. The compound according to claim 3 , wherein all of L a in the formula (2) each represent a divalent linking group represented by any one of the formulae (L-1) to (L-3), (L-8), (L-9) or (L-10). 7. The compound according to claim 3 , wherein all of L a in the formula (2) each represent a divalent linking group represented by any one of the formula (L-1) or (L-8). 8. The compound according to claim 3 , wherein all of R a in the formula (2) each represent a substituted or unsubstituted alkyl group. 9. The compound according to claim 3 , wherein all of R a in the formula (2) each represent a linear alkyl group. 10. The compound according to claim 1 , wherein the compound represented by the formula

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What does patent US9899605B2 cover?
An organic thin film transistor containing a compound represented by the formula (1) in a semiconductor active layer has a high carrier mobility, a small change in the threshold voltage after repeated driving and a high solubility in an organic solvent. A 1 and A 2 represent S, O or Se; at least one of R 1 to R 6 represents a substituent represented by *-L-R wherein L represents a divalent …
Who is the assignee on this patent?
Fujifilm Corp
What technology area does this patent fall under?
Primary CPC classification C07D498/06. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Feb 20 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).