Spirofluorene derivative, material for light-emitting element, light-emitting element, light-emitting device, and electronic device

Patent metadata

Field	Value
Publication number	US-9899602-B2
Application number	US-201715404331-A
Country	US
Kind code	B2
Filing date	Jan 12, 2017
Priority date	Sep 30, 2005
Publication date	Feb 20, 2018
Grant date	Feb 20, 2018

Abstract

It is an object of the present invention to provide a material having a high Tg and a wide energy gap. The present invention provides a spirofluorene derivative represented by General Formula 1. (In the formula, R 1 is any one of hydrogen, an alkyl group having 1 to 4 carbon atoms, or a group represented by General Formula 2. Each of R 2 and R 3 is either hydrogen or an alkyl group having 1 to 4 carbon atoms and may be identical or different. R 4 is an aryl group having 6 to 15 carbon atoms. Each of R 5 and R 6 is any one of hydrogen, an alkyl group having 1 to 4 carbon atoms, or an aryl group having 6 to 15 carbon atoms and may be identical or different.)

First claim

What is claimed is:

1. A semiconductor device comprising:
an element comprising a material having a molecular weight 678,
wherein the material having the molecular weight 678 consists of a first part of a molecular weight 510 and a second part of a molecular weight 168, and
wherein the first part is bonded to the second part by a single bond.

2. The semiconductor device according to claim 1 , wherein the element is provided over a glass substrate.

3. The semiconductor device according to claim 1 , wherein the element is provided over an insulating film comprising silicon nitride.

4. The semiconductor device according to claim 1 , wherein the material having the molecular weight 678 is represented by Structural Formula 27,

5. The semiconductor device according to claim 1 , wherein the element is a light-emitting element.

6. A semiconductor device comprising:
an element comprising a first electrode, a second electrode over the first electrode, a layer comprising a material between the first electrode and the second electrode,
wherein the material has a molecular weight 678,
wherein the material consists of a first part of a molecular weight 510 and a second part of a molecular weight 168, and
wherein the first part is bonded to the second part by a single bond.

7. The semiconductor device according to claim 6 , wherein the element is provided over a glass substrate.

8. The semiconductor device according to claim 6 , wherein the element is provided over an insulating film comprising silicon nitride.

9. The semiconductor device according to claim 6 , wherein the first electrode is an anode and the second electrode is a cathode.

10. The semiconductor device according to claim 6 , wherein the first electrode comprises at least one of ITO and silver.

11. The semiconductor device according to claim 6 , wherein the second electrode comprises at least one of magnesium and silver.

12. The semiconductor device according to claim 6 , wherein the material is represented by Structural Formula 27,

13. The semiconductor device according to claim 6 , wherein the element is a light-emitting element.

14. A semiconductor device comprising:
a transistor over a substrate;
an element electrically connected to the transistor, the element comprising a first electrode, a second electrode over the first electrode, and a layer comprising a material interposed therebetween; and
wherein the material has a molecular weight 678,
wherein the material consists of a first part of a molecular weight 510 and a second part of a molecular weight 168, and
wherein the first part is bonded to the second part by a single bond.

15. The semiconductor device according to claim 14 , wherein the substrate is a glass substrate.

16. The semiconductor device according to claim 14 , wherein the transistor comprises a crystalline semiconductor film.

17. The semiconductor device according to claim 14 , wherein the transistor comprises a gate electrode comprising molybdenum.

18. The semiconductor device according to claim 14 , wherein the element is provided over an insulating film comprising silicon nitride.

19. The semiconductor device according to claim 14 , wherein the first electrode is an anode and the second electrode is a cathode.

20. The semiconductor device according to claim 14 , wherein the first electrode comprises at least one of ITO and silver.

21. The semiconductor device according to claim 14 , wherein the second electrode comprises at least one of magnesium and silver.

22. The semiconductor device according to claim 14 , wherein the material is represented by Structural Formula 27,

23. The semiconductor device according to claim 14 , wherein the element is a light-emitting element.

24. A semiconductor device comprising:
an element comprising a material represent by Structural Formula 27

25. The semiconductor device according claim 24 ,
wherein the element comprises a first electrode, a second electrode over the first electrode, and a layer between the first electrode and the second electrode, and
wherein the layer comprises the material.

26. The semiconductor device according claim 24 , further comprising:
a transistor;
wherein the transistor is electrically connected to the element,
wherein the element comprises a first electrode, a second electrode over the first electrode, and a layer between the first electrode and the second electrode, and
wherein the layer comprises the material.

Assignees

• Semiconductor Energy Lab

Inventors

• Kawakami Sachiko
• Nakashima Harue

Classifications

• H01L51/5056

  Electricity · mapped topic

• C07C2103/97

  Chemistry & Metallurgy · mapped topic

• H01L51/5218

  Electricity · mapped topic

• H01L51/0096

  Electricity · mapped topic

• H01L2251/308

  Electricity · mapped topic