Substrate for LED with total-internal reflection layer surrounding LED

Patent metadata

Field	Value
Publication number	US-9899579-B2
Application number	US-201415032021-A
Country	US
Kind code	B2
Filing date	Oct 22, 2014
Priority date	Nov 7, 2013
Publication date	Feb 20, 2018
Grant date	Feb 20, 2018

Abstract

A packaged LED module includes an LED die mounted on a substrate surface. Formed on the substrate surface and surrounding the die is a first layer of a low index of refraction material. A lens of a higher index of refraction material is molded over the LED die and the first layer. The interface of the lens and the first layer reflects light by total internal reflection (TIR), in accordance with Snell's Law, when the LED light impinges at greater than the critical angle. The first layer may be a low index epoxy, silicone, or other material. In another embodiment, a layer surrounding the LED die is processed after the lens is formed to create an air/lens interface for TIR. The LED die may include a phosphor layer, which results in even more side light being reflected off the interface and not absorbed by the substrate surface.

First claim

What is claimed is:

1. A light emitting device comprising:
a light emitting diode (LED) die mounted on a substrate surface;
a lens of a first material encapsulating the LED die and extending over the substrate surface, the first material having a first index of refraction, wherein the first material comprises silicone molded over the substrate surface;
a first layer of a second material over the substrate surface surrounding the LED die, the second material and the first material meeting at an interface surrounding the LED die, the second material having a second index of refraction lower than the first index of refraction, wherein the second material comprises a gas layer; and
a shrinkable second layer formed on the substrate that has pulled back from the lens to create a gap containing the second material.

2. The device of claim 1 wherein the silicone has an index of refraction greater than 1.5.

3. The device of claim 1 wherein the first layer of the second material extends under an outer edge of the lens.

4. The device of claim 1 wherein a periphery of the first layer of the second material is within the lens.

5. The device of claim 1 wherein the gas comprises air.

6. The device of claim 1 wherein a difference between the first index of refraction and the second index of refraction is at least 0.4.

7. The device of claim 1 wherein the substrate surface is a submount surface.

8. The device of claim 1 wherein the LED die comprises a phosphor layer, such that at least a portion of the light emitted from the phosphor layer reflects off the interface by total internal reflection (TIR).

9. The device of claim 1 wherein the substrate surface has an indentation surrounding the LED die, wherein at least part of the indentation contains the second material.

10. A light emitting device comprising:
a light emitting diode (LED) die mounted on a substrate surface;
a lens of a first material encapsulating the LED die and extending over the substrate surface, the first material having a first index of refraction, wherein the first material comprises silicone molded over the substrate surface;
a first layer of a second material over the substrate surface surrounding the LED die, the second material and the first material meeting at an interface surrounding the LED die, the second material having a second index of refraction lower than the first index of refraction, wherein the second material comprises a gas layer; and
a porous layer formed on the substrate surface, the porous layer comprising the second material.

11. A method of forming a light emitting device comprising:
providing a light emitting diode (LED) die mounted on a substrate surface;
forming a first layer of a first material on the substrate surface;
forming a lens of a second material over the LED die and over the first layer, the second material having an index of refraction; and
processing the first layer after the lens is formed to cause a gap containing a gas between the substrate surface and the second material, wherein an interface is created where the gas contacts the second material, wherein an index of refraction of the gas is lower than the index of refraction of the second material.

12. A method of forming a light emitting device, the method comprising:
providing a light emitting diode (LED) die electrically connected to a metal pad on an upper surface of a substrate;
removing a portion of the substrate adjacent the LED die to form a moat having a bottom below the upper surface of the substrate;
filling the moat with a first material, such that an upper surface of the first material is substantially flush with the upper surface of the substrate;
forming a lens comprising a second material over the LED die, the upper surface of the first material, and the upper surface of the substrate; and
processing the first layer after the lens is formed to cause gas to form in the moat such that an index of refraction of the moat is less than an index of refraction of the second material.

13. The method of claim 1 , wherein the outer edge of the lens extends laterally on the substrate beyond an outer edge of the moat.

14. The method of claim 1 , wherein the processing the first layer comprises high temperature curing.

15. The method of claim 1 , wherein the processing the first layer comprises laser ablation.

16. The method of claim 1 , wherein the processing the first layer causes the first material to evaporate, such that the moat contains a gas.

17. The method of claim 1 , wherein the processing the first layer causes the first material to shrink away from the second material, such that a gas layer forms between the first material and the second material.

18. The method of claim 1 , wherein the processing the first layer causes the first material to become porous.

19. The method of claim 1 , wherein the moat is formed above a metal ring.

20. The method of claim 1 , wherein the LED die comprises a phosphor layer, such that at least a portion of the light emitted from the phosphor layer reflects off an interface of the first material and the second material by total internal reflection (TIR).

Assignees

• Koninklijke Philips Nv

Inventors

• Butterworth Mark Melvin

Classifications

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H01L2933/0058

  Electricity · mapped topic

• H01L33/54

  Electricity · mapped topic

• H01L33/56 Primary

  Electricity · mapped topic

• H01L2224/16225

  Electricity · mapped topic