Multi-wavelength detector array incorporating two dimensional and one dimensional materials

Patent metadata

Field	Value
Publication number	US-9899547-B2
Application number	US-201615137252-A
Country	US
Kind code	B2
Filing date	Apr 25, 2016
Priority date	Apr 25, 2016
Publication date	Feb 20, 2018
Grant date	Feb 20, 2018

Abstract

A method of forming a wavelength detector that includes forming a first transparent material layer having a uniform thickness on a first mirror structure, and forming an active element layer including a plurality of nanomaterial sections and electrodes in an alternating sequence atop the first transparent material layer. A second transparent material layer is formed having a plurality of different thickness portions atop the active element layer, wherein each thickness portion correlates to at least one of the plurality of nanomaterials. A second mirror structure is formed on the second transparent material layer.

First claim

What is claimed is:

1. A wavelength detector comprising:
a first transparent material layer having a uniform thickness present on a first mirror structure;
an active element layer including a plurality of nanomaterial sections and electrodes in an alternating sequence;
a second transparent material layer having a plurality of different thickness portions, wherein each thickness portion correlates to at least one of the plurality of nanomaterial sections; and
a second mirror structure on the second transparent material layer, wherein the plurality of different thickness portions provides successive steps of reducing thickness from the first mirror structure to the second mirror structure with one of the plurality of nanomaterial sections present therebetween that provides a wavelength to be measured by change in resistance resulting from said plurality of different thickness sections.

2. The wavelength detector of claim 1 , wherein the first mirror structure is comprised of a metal selected from the group consisting of gold, silver, aluminum and combinations thereof.

3. The wavelength detector of claim 1 , wherein the first transparent material layer is composed of a light transmissive material selected from the group consisting of aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ), silicon (Si), silicon nitride (Si 3 N 4 ) and combinations thereof.

4. The wavelength detector of claim 1 , wherein plurality of nanomaterial sections are composed of nanomaterials selected from the group consisting of graphene, transition metal dichalcogenides, carbon fullerenes, carbon nanotubes, black phosphorus or a combination thereof.

5. The wavelength detector of claim 1 , wherein the electrodes are present between adjacent portions of nanomaterial sections in the plurality of nanomaterial sections.

6. The wavelength detector of claim 5 , wherein the electrodes are composed of a metal selected from the group consisting of aluminum, copper, tungsten, silver, gold, titanium and combinations thereof.

7. The wavelength detector of claim 6 , wherein the second transparent material layer is composed of a light transmissive material selected from the group consisting of aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ), silicon (Si), silicon nitride (Si3N4) and combinations thereof.

8. The wavelength detector of claim 7 , wherein the plurality of different thickness portions include a plurality of reducing thicknesses with successive steps, each step of reducing thickness overlying one of the plurality of nanomaterial sections.

9. The wavelength detector of claim 8 , wherein each successive step of reducing thickness provides a dimension from the first mirror structure to the second mirror structure with one of the plurality of nanomaterial sections is present therebetween that provides a wavelength to be measured by change in resistance measured across electrodes from said alternating sequence of electrodes that are positioned on opposing sides of said one of said plurality of nanomaterial sections.

10. A wavelength detector comprising:
a first transparent material layer having a uniform thickness present on a first mirror structure;
an active element including a plurality of nanomaterial sections and electrodes in an alternating sequence;
a second transparent material layer having a plurality of different thickness portions, wherein each thickness portion correlates to at least one of the plurality of nanomaterials; and
a second mirror structure on the second transparent material layer, wherein the plurality of different thickness portions provides successive steps of reducing thickness from the first mirror structure to the second mirror structure with one of the plurality of nanomaterial sections present therebetween that provides a wavelength to be measured by change in resistance resulting from said plurality of different thickness sections; and
a bandpass filter present atop the second mirror structure.

11. The wavelength detector of claim 10 , wherein the bandpass filter comprises a brag reflector comprising repeating alternating dielectrics with a contrast in their permittivity.

Assignees

• IBM

Inventors

• Engel Michael
• Steiner Mathias B

Classifications

• H01L31/0232 Primary

  Electricity · mapped topic

• H01L31/18

  Electricity · mapped topic

• H10F77/1625

  Semiconductor nanoparticles embedded in semiconductor matrix · CPC title

• H10F77/413 Primary

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title

• H10F77/331

  for filtering or shielding light, e.g. multicolour filters for photodetectors · CPC title