Solar cells with improved lifetime, passivation and/or efficiency

Patent metadata

Field	Value
Publication number	US-9899542-B2
Application number	US-201615213273-A
Country	US
Kind code	B2
Filing date	Jul 18, 2016
Priority date	Dec 22, 2014
Publication date	Feb 20, 2018
Grant date	Feb 20, 2018

Abstract

A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over the dielectric region and forming a dopant region on a surface of the silicon substrate. In an embodiment, the method can include heating the silicon substrate at a temperature above 900 degrees Celsius to getter impurities to the emitter region and drive dopants from the dopant region to a portion of the silicon substrate.

First claim

What is claimed is:

1. A solar cell, the solar cell having a front side which faces the sun during normal operation and a back side opposite the front side, the solar cell comprising:
a dielectric region over a silicon substrate, wherein a portion of the silicon substrate has a dopant concentration of approximately less than or equal to 2×10 18 cm −3 ,
a first emitter region having metal impurities formed over the dielectric region;
a first metal contact formed over the first emitter region;
a second emitter region having metal impurities; and
a second metal contact formed over the second emitter region, wherein the first emitter region and first metal contact are formed on a side of the solar cell opposite a side of the solar cell on which the second emitter region and second metal contact are formed, and wherein the second metal contact has a staggered orientation with the first metal contact with respect to a vertical axis between the second metal contact and the first metal contact.

2. The solar cell of claim 1 , wherein the first emitter region and first metal contact are formed on the front side of the solar cell and the second emitter region and second metal contact are formed on the back side of the solar cell.

3. The solar cell of claim 2 , wherein the portion of the silicon substrate having a dopant concentration of approximately less than or equal to 2×10 18 cm −3 is on the front side of the solar cell.

4. The solar cell of claim 2 , wherein the first emitter region is a doped polysilicon region.

5. The solar cell of claim 1 , wherein the first emitter region and first metal contact are formed on the back side of the solar cell and the second emitter region and second metal contact are formed on the front side of the solar cell.

6. The solar cell of claim 5 , wherein the portion of the silicon substrate having a dopant concentration of approximately less than or equal to 2×10 18 cm −3 is on the front side of the solar cell.

7. The solar cell of claim 5 , wherein the first emitter region is a doped polysilicon region.

8. The solar cell of claim 1 , wherein the portion of the silicon substrate having a dopant concentration of approximately less than or equal to 2×10 18 cm −3 is on the front side of the solar cell.

9. A solar cell, the solar cell having a front side which faces the sun during normal operation and a back side opposite the front side, the solar cell comprising:
a dielectric region over a silicon substrate;
a first emitter region having metal impurities formed over the dielectric region;
a first metal contact formed over the first emitter region;
a second emitter region having metal impurities; and
a second metal contact formed over the second emitter region, wherein the first emitter region and first metal contact are formed on a side of the solar cell opposite a side of the solar cell on which the second emitter region and second metal contact are formed, and wherein the second metal contact has a staggered orientation with the first metal contact with respect to a vertical axis between the second metal contact and the first metal contact.

10. The solar cell of claim 9 , wherein the first emitter region and first metal contact are formed on the front side of the solar cell and the second emitter region and second metal contact are formed on the back side of the solar cell.

11. The solar cell of claim 9 , wherein the first emitter region is a doped polysilicon region.

12. The solar cell of claim 9 , wherein the first emitter region and first metal contact are formed on the back side of the solar cell and the second emitter region and second metal contact are formed on the front side of the solar cell.

Assignees

• Sunpower Corp

Inventors

• Smith David D
• Dennis Tim
• Tabajonda Russelle De Jesus

Classifications

• H10P36/03

  within silicon bodies · CPC title

• H01L31/1804

  Electricity · mapped topic

• H01L31/0747

  Electricity · mapped topic

• Y02E10/547

  Monocrystalline silicon PV cells · CPC title

• H01L31/022441

  Electricity · mapped topic