Single transistor random access memory using ion storage in two-dimensional crystals

Patent metadata

Field	Value
Publication number	US-9899480-B2
Application number	US-201414212310-A
Country	US
Kind code	B2
Filing date	Mar 14, 2014
Priority date	Mar 15, 2013
Publication date	Feb 20, 2018
Grant date	Feb 20, 2018

Abstract

A single-transistor random access memory (RAM) cell may be used as universal memory. The single-transistor RAM cell generally includes a first gate, a 2D-crystal channel, a source, a drain, an ion conductor, and a second (back) gate. The single-transistor RAM cell is capable of drifting ions towards the graphene channel. The ions in turn induce charge carriers from the source into the graphene channel. The closer the ions are to the graphene channel, the higher the conductivity of the graphene channel. As the ions are spaced from the graphene channel, the conductivity of the graphene channel is reduced. Thus the presence of the charged ions adjacent to the channel is used to modify the channel's conductivity, which is sensed to indicate the state of the memory.

First claim

We claim:

1. A single-transistor random access memory (RAM) cell comprising:
a conductive path that transmits charge carriers from a source;
a drain for receiving at least some of the charge carriers;
a channel comprising a two-dimensional (2D) crystal the channel interposed between the source and the drain, wherein the charge carriers flow along the conductive path, through the channel, to the drain;
a first gate for electrically regulating the flow of the charge carriers through the channel;
a dielectric isolating the first gate from the channel;
an electrically-insulating ion conductor interposed between the channel and a back gate, the conductor comprising a plurality of ions, which are mobile within the conductor;
the back gate for selectively positioning the plurality of ions adjacent to the channel by creating an electric field that directs the plurality of ions, wherein the plurality of ions, when positioned adjacent to the channel, induce the charge carriers into the channel, and wherein Coulomb forces between the charge carriers in the channel and the plurality of ions positioned adjacent to the channel hold the plurality of ions adjacent to the channel.

2. A single-transistor RAM cell of claim 1 , wherein the charge carriers are electrons or holes, wherein the plurality of ions are cations, anions, or a mixture of cations and anions.

3. A single-transistor RAM cell of claim 1 , wherein the channel comprises at least one of a transition metal dichalcogenide, graphene, or a graphene nanoribbon.

4. A single transistor RAM cell of claim 1 , wherein the electrically-insulating ion conductor comprises a solid polymer electrolyte.

5. A single-transistor RAM cell of claim 1 , wherein the electrically-insulating ion conductor comprises a crown ether electrolyte.

6. A single-transistor random access memory (RAM) cell comprising:
a conductive path that transmits charge carriers from a source;
a drain for receiving at least some of the charge carriers;
a channel comprising a two-dimensional (2D) crystal interposed between the source and the drain, wherein the charge carriers flow along the conductive path, through the channel, to the drain;
an electrically-insulating ion conductor interposed between the channel and a back gate, the ion conductor comprising a plurality of ions; and
the back gate for selectively positioning the plurality of ions adjacent to the channel, wherein the plurality of ions positioned adjacent to the channel induce the charge carriers into the channel.

7. A single-transistor RAM cell of claim 6 , further comprising:
a first gate for electrically regulating the flow of the charge carriers through the channel; and
a dielectric isolating the first gate from the 2D channel.

8. A single-transistor RAM cell of claim 7 , wherein Coulomb forces between the charge carriers in the channel and the plurality of ions positioned adjacent to the channel hold the plurality of ions adjacent to the channel.

9. A single-transistor RAM cell of claim 7 , wherein the charge carriers are electrons or holes, wherein the plurality of ions are cations or anions.

10. A single-transistor RAM cell of claim 7 , wherein the charge carriers are electrons or holes, wherein the plurality of ions are introduced as a salt with both cations and anions.

11. A memory cell array comprising a plurality of the single-transistor RAM cells of claim 7 .

12. A single-transistor RAM cell of claim 7 , wherein the 2D crystal comprises graphene.

13. A single-transistor RAM cell of claim 7 , wherein the channel comprises a graphene nanoribbon.

14. A single-transistor RAM cell of claim 7 , wherein the channel comprises a transition metal dichalcogenide.

15. A single transistor RAM cell of claim 7 , wherein the electrically-insulating ion conductor comprises a solid polymer electrolyte.

16. A single-transistor RAM cell of claim 7 , wherein the electrically-insulating ion conductor comprises a crown ether electrolyte.

17. A single-transistor RAM cell of claim 7 , wherein the dielectric comprises aluminum oxide.

18. A memory cell comprising:
a transistor having at least a conductive path for transmitting charge carriers, the conductive path extending from a voltage source, through a channel, to a drain, wherein the channel comprises two-dimensional (2D) graphene and is disposed between the voltage source and the drain, wherein the transistor further comprises a first gate that regulates flow of the charge carriers from the voltage source into the channel;
a dielectric isolating the first gate from the 2D graphene channel; and
a back gate that selectively drifts a plurality of ions disposed in an electrically-insulating ion conductor interposed between the channel and a back gate towards or away from the channel by creating an electric field, wherein drifting the plurality of ions towards the channel reduces a resistance of the channel,
wherein a state of the memory cell depends on the resistance of the channel.

19. A memory cell of claim 18 , wherein Coulomb forces between the charge carriers in the channel and the plurality of ions positioned adjacent to the channel hold the plurality of ions adjacent to the channel.

20. A memory cell of claim 18 , further comprising an electrically-insulating ion conductor interposed between the channel and the back gate, the electrically-insulating ion conductor comprises a crown ether electrolyte.

Assignees

• Univ Notre Dame Du Lac

Inventors

• Seabaugh Alan
• Fullerton Susan

Classifications

• G11C2213/53

  Structure wherein the resistive material being in a transistor, e.g. gate · CPC title

• H01L51/0045

  Electricity · mapped topic

• H01L29/1606 Primary

  Electricity · mapped topic

• H01L51/0575

  Electricity · mapped topic

• G11C13/0014

  comprising cells based on organic memory material · CPC title