Semiconductor device

Patent metadata

Field	Value
Publication number	US-9899374-B2
Application number	US-201615354240-A
Country	US
Kind code	B2
Filing date	Nov 17, 2016
Priority date	Nov 19, 2015
Publication date	Feb 20, 2018
Grant date	Feb 20, 2018

Abstract

A semiconductor device includes a semiconductor substrate including, on a first surface, first trenches and a second trench linked to each of the first trenches. The semiconductor substrate includes: a p-type end layer extending from the first surface to a position closer to a second surface of the semiconductor substrate than an end of each of the first trenches on a second surface side and including a longitudinal end of each of the first trenches in a plan view of the first surface; a first p-type layer provided in a region between adjacent first trenches, and contacting the first electrode provided on the first surface; an n-type barrier layer; a second p-type layer. The second trench separates the p-type end layer from the first p-type layer and the second p-type layer.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor substrate that includes, on a first surface, a plurality of first trenches and a second trench linked to each of the first trenches;
first insulating layers covering an inner surface of each of the first trenches;
first trench electrodes respectively provided in the first trenches and insulated from the semiconductor substrate by the first insulating layers;
a second insulating layer covering an inner surface of the second trench;
a first electrode provided on the first surface; and
a second electrode provided on a second surface of the semiconductor substrate, wherein the semiconductor substrate includes:
a p-type end layer extending from the first surface to a position closer to the second surface than an end of each of the first trenches on a second surface side in a thickness direction of the semiconductor substrate and including a longitudinal end of each of the first trenches in a plan view of the first surface;
a first p-type layer provided on an opposite side of the p-type end layer across the second trench, the first p-type layer being provided in an inter-trench region that is held between adjacent first trenches, and contacting the first electrode;
an n-type barrier layer, the n-type barrier layer being provided in the inter-trench region and being provided closer to the second surface than the first p-type layer;
a second p-type layer provided in the inter-trench region, the second p-type layer being provided closer to the second surface than the n-type barrier layer, and being separated from the first p-type layer by the n-type barrier layer;
an n-type drift layer, the n-type drift layer being provided closer to the second surface than the second p-type layer; and
an n-type cathode layer, the n-type cathode layer being provided closer to the second surface than the n-type drift layer and contacting the n-type drift layer and the second electrode, and

the second trench separates the p-type end layer from the first p-type layer and the second p-type layer.

2. The semiconductor device according to claim 1 , wherein
the semiconductor substrate includes a diode region and an insulated gate bipolar transistor region,
a plurality of the inter-trench regions exist,
each of the diode region and the insulated gate bipolar transistor region has at least one of the inter-trench regions,
the inter-trench region in the insulated gate bipolar transistor region has an n-type emitter layer, the n-type emitter layer contacting the first electrode and the first insulating layer and being separated from the n-type barrier layer by the first p-type layer,
the n-type cathode layer is provided in the diode region, and
the semiconductor substrate has a p-type first collector layer, the p-type first collector layer being provided in the insulated gate bipolar transistor region, provided closer to the second surface than the n-type drift layer, and contacting the n-type drift layer and the second electrode.

3. The semiconductor device according to claim 2 , wherein
the diode region is a region that has the n-type cathode layer between the n-type drift layer and the second electrode, and
the insulated gate bipolar transistor region is a region that has the p-type first collector layer between the n-type drift layer and the second electrode.

4. The semiconductor device according to claim 3 , wherein
the diode region includes the inter-trench region that is not provided with the n-type emitter layer.

5. The semiconductor device according to claim 2 , wherein
a part of the n-type drift layer is provided closer to the second surface than the p-type end layer,
the semiconductor substrate has a p-type second collector layer, the p-type second collector layer being provided closer to the second surface than the p-type end layer and closer to the second surface than the n-type drift layer, and contacting the n-type drift layer and the second electrode, and
a boundary between the n-type cathode layer and the p-type second collector layer is provided at a position that overlaps the second trench or in the diode region when the semiconductor substrate is seen in the plan view.

6. The semiconductor device according to claim 1 , wherein
the p-type end layer contacts a lateral surface of the second trench on a p-type end layer side.

7. The semiconductor device according to claim 6 , wherein
the p-type end layer contacts an entire range of the lateral surface of the second trench on the p-type end layer side.

8. The semiconductor device according to claim 1 , wherein
p-type impurity concentration of the p-type end layer is higher than n-type impurity concentration of the n-type drift layer.

9. The semiconductor device according to claim 1 , wherein
the first trenches extend in parallel with each other when the semiconductor substrate is seen in the plan view.

10. The semiconductor device according to claim 9 , wherein
the second trench extends in an orthogonal direction to the first trenches when the semiconductor substrate is seen in the plan view.

11. The semiconductor device according to claim 1 , wherein
the second trench is filled with an insulating body.

12. The semiconductor device according to claim 2 , wherein
the second trench is provided with a second trench electrode, and
each of the first trench electrodes is electrically connected via the second trench electrode.

13. The semiconductor device according to claim 12 , wherein
one of the first trench electrodes in the diode region is electrically separated from the second trench electrode and contacts the first electrode.

14. The semiconductor device according to claim 2 , wherein
the first trench electrode in the diode region is electrically separated from the first trench electrode in the insulated gate bipolar transistor region.

15. The semiconductor device according to claim 10 , wherein
a plurality of the inter-trench regions exist,
a second trench in a first inter-trench region as one of the inter-trench regions and a second trench in a second inter-trench region that is adjacent to the first inter-trench region are located at different positions in a longitudinal direction of the first trench.

16. The semiconductor device according to claim 10 , wherein
the semiconductor substrate includes, on the first surface, two second trenches provided in parallel in a longitudinal direction of the first trench.

17. The semiconductor device according to claim 1 , wherein
the semiconductor substrate includes a diode region and a metal-oxide-semiconductor field effect transistor region,
a plurality of the inter-trench regions exist,
each of the diode region and the metal-oxide-semiconductor field effect transistor region has at least one of the inter-trench regions,
the inter-trench region in the metal-oxide-semiconductor field effect transistor region has an n-type source layer, the n-type source layer contacting the first electrode and the first insulating layer and being separated from the n-type barrier layer by the first p-type layer,
the n-type cathode layer is provided in the diode region, and
the semiconductor substrate has an n-type drain layer, the n-type drain layer being provided in the metal-oxide-semiconductor field effect transistor region, being provided closer to the second surface than the n-type drift layer, and contacting the n-type drift layer and the second electrode.

18. The semiconductor device according to claim 1 , wherein
the n-type cathode layer has highe

Assignees

• Toyota Motor Co Ltd

Inventors

• Hirabayashi Yasuhiro

Classifications

• H01L27/0635 Primary

  Electricity · mapped topic

• H01L29/7391

  Electricity · mapped topic

• H01L29/4238

  Electricity · mapped topic

• H01L29/0696

  Electricity · mapped topic

• H01L29/423

  Electricity · mapped topic