Method for patterning a substrate involving directed self-assembly

Patent metadata

Field	Value
Publication number	US-9899220-B2
Application number	US-201615289550-A
Country	US
Kind code	B2
Filing date	Oct 10, 2016
Priority date	Dec 15, 2015
Publication date	Feb 20, 2018
Grant date	Feb 20, 2018

Abstract

A method for patterning a substrate is disclosed. The method includes applying a first directed self-assembly (DSA) patterning process that defines a first patterned layer on top of the substrate. The pattern of the first patterned layer is to be transferred into the substrate. The method also includes applying a planarizing layer on top of the first patterned layer. The method further includes applying a second DSA patterning process that defines a second patterned layer on top of the planarizing layer, thereby not patterning the planarizing layer. A pattern of the second patterned layer is to be transferred into the substrate. Projections of the pattern of the second patterned layer and the pattern of the first patterned layer on the substrate have no overlap. Additionally, the method includes transferring the patterns defined by the first patterned layer and the second patterned layer into the substrate.

First claim

What is claimed is:

1. A method for patterning a substrate, comprising:
applying a first directed self-assembly (DSA) patterning process defining a first patterned layer on top of the substrate, wherein a pattern of the first patterned layer is to be transferred into the substrate;
applying a planarizing layer on top of the first patterned layer;
applying a second DSA patterning process defining a second patterned layer on top of the planarizing layer, thereby not patterning the planarizing layer, wherein a pattern of the second patterned layer is to be transferred into the substrate, and wherein projections of the pattern of the second patterned layer and the pattern of the first patterned layer on the substrate have no overlap; and
transferring the patterns defined by the first patterned layer and the second patterned layer into the substrate.

2. The method according to claim 1 , wherein the substrate comprises a hard mask layer on top of a target substrate, and wherein applying the first DSA patterning process comprises:
providing a first dielectric hard mask layer on the hard mask layer;
providing a first planarizing layer on the first dielectric hard mask layer;
providing a first patterned photoresist layer on the first planarizing layer, wherein the first patterned photoresist layer comprises openings;
transferring the openings in the first patterned photoresist layer into the first planarizing layer;
applying a first block copolymer (BCP) material in openings defined in the first planarizing layer;
inducing phase separation of the first BCP material in the openings in the first planarizing layer, resulting in cylindrical domains of a first component of the first BCP material being surrounded by a complementary domain of a second component of the first BCP material;
selectively removing the first component thereby defining openings in the second component of the first BCP material;
transferring the openings in the second component of the first BCP material in the first dielectric hard mask layer, wherein the first dielectric hard mask layer corresponds to the first patterned layer; and
selectively removing the first planarizing layer and the second component of the first BCP material.

3. The method according to claim 2 , wherein the first BCP material is (Polystyrene)-b-PMMA (poly methyl methacrylate) (PS-b-PMMA).

4. The method according to claim 2 , wherein the hard mask layer comprises titanium nitride (TiN).

5. The method according to claim 2 , wherein the first dielectric hard mask layer comprises silicon nitride (SiN).

6. The method according to claim 5 , wherein the first dielectric hard mask layer is deposited at a low temperature by an atomic layer deposition (ALD) process.

7. The method according to claim 2 , wherein applying the second DSA patterning process comprises:
providing a second dielectric hard mask layer on the planarizing layer;
providing a second planarizing layer on the second dielectric hard mask layer;
providing a second patterned photoresist layer on the second planarizing layer, wherein the second patterned photoresist layer comprises openings;
transferring the openings in the second patterned photoresist layer into the second planarizing layer;
applying a second block copolymer (BCP) material in openings defined in the second planarizing layer;
inducing phase separation of the second BCP material in the openings in the second planarizing layer, resulting in cylindrical domains of a first component of the second BCP material being surrounded by a complementary domain of a second component of the second BCP material;
selectively removing the first component thereby defining openings in the second component of the second BCP material;
transferring the openings in the second component of the second BCP material in the second dielectric hard mask layer, wherein the second dielectric hard mask layer corresponds to the second patterned layer; and
selectively removing the second planarizing layer and the second component of the second BCP material.

8. The method according to claim 7 , further comprising:
transferring the openings in the second dielectric hard mask layer into the first dielectric hard mask layer; and
transferring a resulting pattern associated with the first dielectric hard mask layer into the substrate.

9. The method according to claim 1 , wherein the substrate comprises a hard mask layer on top of a target substrate, and wherein applying the first DSA patterning process comprises:
providing a first dielectric hard mask layer on the hard mask layer;
providing a first planarizing layer on the first dielectric hard mask layer;
providing a first patterned photoresist layer on the first planarizing layer, wherein the first patterned photoresist layer comprises openings;
transferring the openings in the first patterned photoresist layer into the first planarizing layer;
applying a first block copolymer (BCP) material in openings defined in the first planarizing layer;
inducing phase separation of the first BCP material in the openings in the first planarizing layer, resulting in cylindrical domains of a first component of the first BCP material being surrounded by a complementary domain of a second component of the first BCP material;
performing a sequential infiltration synthesis process to selectively transform the cylindrical domains of the first component of the first BCP material into first metallic pillar structures; and
selectively removing the second component of the first BCP material and the first planarizing layer, wherein a pattern of the first metallic pillar structures corresponds to the first patterned layer.

10. The method according to claim 9 , wherein applying the second DSA patterning process comprises:
providing a second dielectric hard mask layer on the planarizing layer;
providing a second planarizing layer on the second dielectric hard mask layer;
providing a second patterned photoresist layer on the second planarizing layer, wherein the second patterned photoresist layer comprises openings;
transferring the openings in the second patterned photoresist layer into the second planarizing layer;
applying a second block copolymer (BCP) material in openings defined in the second planarizing layer;
inducing phase separation of the second BCP material in the openings in the second planarizing layer, resulting in cylindrical domains of a first component of the second BCP material being surrounded by a complementary domain of a second component of the second BCP material;
performing a sequential infiltration synthesis process to selectively transform the cylindrical domains of the first component of the second BCP material into second metallic pillar structures; and
selectively removing the second component of the second BCP material and the second planarizing layer, wherein a pattern of the second metallic pillar structures corresponds to the second patterned layer.

11. The method according to claim 10 , further comprising:
transferring the pattern of the second metallic pillar structures into the second dielectric hard mask layer and into the planarizing layer; and
transferring the pattern of the first metallic pillar structures and the planarizing layer into the first dielectric hard mask layer.

12. The method according to claim 11 , further comprising:
removing the metallic pillar structures and the planarizing layer; and
transferring a pattern of the first dielectric hard mask layer into the substrate.

Assignees

• Imec Vzw
• Univ Leuven Kath

Inventors

• Chan Boon Teik
• Tao Zheng
• Singh Arjun
• Doise Jan

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/4083

  characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P76/4088 Primary

  Processes for improving the resolution of the masks · CPC title