Fluorinated Nitriles as Dielectric Gases
US-2015083979-A1 · Mar 26, 2015 · US
US9899125B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9899125-B2 |
| Application number | US-201314425978-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 9, 2013 |
| Priority date | Sep 10, 2012 |
| Publication date | Feb 20, 2018 |
| Grant date | Feb 20, 2018 |
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The present invention relates to medium- or high-voltage equipment having low environmental impact, including a leaktight enclosure in which there are located electrical components covered with a solid dielectric layer of varying thickness and a gaseous medium for providing electrical insulation and/or for extinguishing electric arcs that are likely to occur in said enclosure, and that comprises heptafluoroisobutyronitrile in a mixture with a dilution gas.
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What is claimed is: 1. Medium- or high-voltage equipment including a leak tight enclosure in which there are located electrical components covered with a solid dielectric layer of varying thickness and a gaseous medium for providing electrical insulation and/or for extinguishing electric arcs that are likely to occur in said enclosure, the equipment being characterized in that the gaseous medium comprises heptafluoroisobutyronitrile in a mixture with carbon dioxide, wherein, the thickness of said solid dielectric layer being a function of the utilization factor of the electric field, η, defined as the ratio of the mean electric field (U/d) divided by the maximum electric field Emax (η=U/(Emax*d)), wherein said solid dielectric layer is a thick layer presenting a thickness greater than 1 mm and less than 10 mm for utilization factors lying in the range 0.2 to 0.4 and the material(s) selected for making said thick solid dielectric layer present relative permittivity that is less than or equal to 6, and wherein said solid dielectric layer is a thin layer presenting a thickness lying in the range 60 μm to 500 μm for utilization factors greater than 0.5 and the material(s) selected for making said thin solid dielectric layer present relative permittivity lying in the range 2 to 4. 2. Equipment according to claim 1 wherein said heptafluoroisobutyronitrile is present in the heptafluoroisobutyronitrile/carbon dioxide mixture at a molar percentage (M he ) that is not less than 80% of the molar percentage M, determined by the formula (II): M =( P he /P mixture )×100 (II) in which P mixture represents the total pressure of the mixture at 20° C. in the equipment and P he represents the partial pressure, expressed in the same units, that is equivalent at 20° C. to the saturated vapor pressure presented by heptafluoroisobutyronitrile as defined above at the minimum utilization temperature of the equipment. 3. Equipment according to claim 1 , wherein said heptafluoroisobutyronitrile is present in the heptafluoroisobutyronitrile/carbon dioxide mixture at a molar percentage (M he ) that lies in the range 95% to 130% of the molar percentage M determined by the formula (II): M =( P he /P mixture )×100 (II) in which P mixture represents the total pressure of the mixture at 20° C. in the equipment and P he represents the partial pressure, expressed in the same units, that is equivalent at 20° C. to the saturated vapor pressure presented by heptafluoroisobutyronitrile as defined above at the minimum utilization temperature of the equipment, said equipment being medium-voltage or high-voltage equipment in which having some of the mixture in the liquid state does not reduce insulation. 4. Equipment according to claim 1 , wherein said heptafluoroisobutyronitrile is present in the heptafluoroisobutyronitrile/carbon dioxide mixture at a molar percentage (M he ) that lies in the range 95% to 100% of the molar percentage M determined by the formula (II): M =( P he /P mixture )×100 (II) in which P mixture represents the total pressure of the mixture at 20° C. in the equipment and P he represents the partial pressure, expressed in the same units, that is equivalent at 20° C. to the saturated vapor pressure presented by heptafluoroisobutyronitrile as defined above at the minimum utilization temperature of the equipment, said equipment being medium-voltage or high-voltage equipment in which insulation may be affected by the presence of a liquid phase. 5. Equipment according to claim 1 , wherein the material(s) selected for making said thick solid dielectric layer present relative permittivity that is less than or equal to 4. 6. Equipment according to claim 1 , wherein said material(s) presenting relative permittivity that is less than or equal to 6 are selected from polytetrafluoroethylene, polyimide, polyethylene, polypropylene, polystyrene, polycarbonate, polymethyl methacrylate, polysulfone, polyetherimide, polyether ether ketone, parylene N™, Nuflon™, silicone, and epoxy resin. 7. Equipment according to claim 1 , characterized in that said material(s) presenting relative permittivity lying in the range 2 to 4 are selected from polytetrafluoroethylene, polyimide, polyethylene, polypropylene, polystyrene, polyamide, ethylene-monochlorotrifluoroethylene, parylene N™, Nuflon™, HALAR™, and HALAR C™. 8. Equipment according to claim 1 , wherein said equipment is a gas-insulated electrical transformer, a gas-insulated line for transporting or distributing electricity, or a connector/disconnector. 9. Equipment according to claim 1 , wherein said heptafluoroisobutyronitrile is present in the heptafluoroisobutyronitrile/carbon dioxide mixture at a molar percentage (M he ) that lies in the range 97% to 120 of the molar percentage M determined by the formula (II): M =( P he /P mixture )×100 (II) in which P mixture represents the total pressure of the mixture at 20° C. in the equipment and P he represents the partial pressure, expressed in the same units, that is equivalent at 20° C. to the saturated vapor pressure presented by heptafluoroisobutyronitrile as defined above at the minimum utilization temperature of the equipment, said equipment being medium-voltage or high-voltage equipment in which having some of the mixture in the liquid state does not reduce insulation. 10. Equipment according to claim 1 , wherein said heptafluoroisobutyronitrile is present in the heptafluoroisobutyronitrile/carbon dioxide mixture at a molar percentage (M he ) that lies in the range 99% to 110% of the molar percentage M determined by the formula (II): M =( P he /P mixture )×100 (II) in which P mixture represents the total pressure of the mixture at 20° C. in the equipment and P he represents the partial pressure, expressed in the same units, that is equivalent at 20° C. to the saturated vapor pressure presented by heptafluoroisobutyronitrile as defined above at the minimum utilization temperature of the equipment, said equipment being medium-voltage or high-voltage equipment in which having some of the mixture in the liquid state does not reduce insulation. 11. Equipment according to claim 1 , wherein said heptafluoroisobutyronitrile is present in the heptafluoroisobutyronitrile/carbon dioxide mixture at a molar percentage (M he ) that lies in the range 98% to 100% of the molar percentage M determined by the formula (II): M =( P he /P mixture )×100 (II) in which P mixture represents the total pressure of the mixture at 20° C. in the equipment and P he represents the partial pressure, expressed in the same units, that is equivalent at 20° C. to the saturated vapor pressure presented by heptafluoroisobutyronitrile as defined above at the minimum utilization temperature of the equipment, said equipment being medium-voltage or high-voltage equipment in which insulation may be affected by the presence of a liquid phase. 12. Equipment according to claim 1 , wherein the material(s) selected for making said thick solid dielectric layer present relative permittivity that is less than or equal to 3. 13. Equipment according to claim 1 wherein, the thickness of said solid dielectric layer being a function of the utilization factor of the electric field, η, defined as the ratio of the mean electric field (U/d) divided by the maximum electric field Emax (η=U/(Emax*d)), said solid dielectric layer is a thin layer presenting a thickness lying in the range 60 μm to 100 μm for utilization factors greater than 0.5. 14. Equipment according to claim 1 , wherein the material(s) selected for making said thin solid di
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