Methods of forming near field transducers and near field transducers formed thereby

Patent metadata

Field	Value
Publication number	US-9899043-B2
Application number	US-201715430584-A
Country	US
Kind code	B2
Filing date	Feb 13, 2017
Priority date	Dec 6, 2013
Publication date	Feb 20, 2018
Grant date	Feb 20, 2018

Abstract

A method of forming a near field transducer (NFT), the method including the steps of depositing a plasmonic material; depositing an encapsulant material on at least a portion of the plasmonic material; and implanting ions into at least a portion of the plasmonic material through the encapsulant material.

First claim

What is claimed is:

1. A method of forming a near field transducer (NFT), the method comprising the steps of:
depositing a plasmonic material;
depositing an encapsulant material on at least a portion of the plasmonic material;
implanting ions into at least a portion of the plasmonic material through the encapsulant material; and
annealing the plasmonic material.

2. The method according to claim 1 , wherein the plasmonic material is at least partially fabricated before the encapsulant material is deposited thereon.

3. The method according to claim 2 , wherein at least partially fabricated comprises defining a peg, forming a peg, or some combination thereof.

4. The method according to claim 1 , wherein the encapsulant material is deposited on plasmonic material that forms a peg of a NFT, on plasmonic material that forms a disc of a NFT, or on plasmonic material that forms both a peg and a disc of a NFT.

5. The method according to claim 1 , wherein the encapsulant material comprises dielectric material.

6. The method according to claim 1 , wherein the encapsulant material is deposited to a thickness from about 2 nm to about 50 nm.

7. The method according to claim 1 , wherein implanting ions into at least a portion of the plasmonic material comprises patterning steps.

8. The method according to claim 1 further comprising etching at least a portion of the encapsulant material after implanting ions into at least a portion of the plasmonic material.

9. The method according to claim 1 further comprising depositing additional encapsulant material after implantation of ions into at least a portion of the plasmonic material.

10. A method of forming a near field transducer (NFT), the method comprising the steps of:
depositing a plasmonic material;
implanting a first dopant element into the plasmonic material;
implanting a second dopant element into the plasmonic material; and
annealing the plasmonic material,
wherein the second dopant element and the first dopant element have higher affinity for each other than they do the plasmonic material.

11. The method according to claim 10 , wherein the first dopant can amorphize the plasmonic material.

12. The method according to claim 10 , wherein the plasmonic material is gold (Au).

13. The method according to claim 12 , wherein the first and second dopant are independently selected from: carbon (C), nitrogen (N), boron (B), and antimony (Sb).

14. A method of forming a near field transducer (NFT), the method comprising the steps of:
depositing a plasmonic material;
depositing an encapsulant material on at least a portion of the plasmonic material;
implanting ions into at least a portion of the plasmonic material through the encapsulant material;
forming a NFT from the plasmonic material; and
annealing the plasmonic material.

15. The method according to claim 14 , wherein the NFT is formed from the plasmonic material before the encapsulant material is deposited thereon.

16. The method according to claim 14 further comprising etching at least a portion of the encapsulant material after implanting ions into at least a portion of the plasmonic material and depositing additional encapsulant material after implantation of ions into at least a portion of the plasmonic material.

17. The method according to claim 1 , wherein implanting ions into at least a portion of the plasmonic material comprises patterning steps.

18. The method according to claim 1 , wherein the plasmonic material is annealed after implanting ions into at least a portion of the plasmonic material.

19. The method according to claim 10 , wherein the plasmonic material is annealed after implanting ions into at least a portion of the plasmonic material.

20. The method according to claim 14 , wherein the plasmonic material is annealed after implanting ions into at least a portion of the plasmonic material.

Assignees

• Seagate Technology Llc

Inventors

• Jayashankar Sethuraman
• Brickner Hui

Classifications

• C23C14/06

  characterised by the coating material ({C23C14/0021} , C23C14/04 take precedence) · CPC title

• C23C14/16

  on metallic substrates or on substrates of boron or silicon · CPC title

• G11B2005/0021

  Thermally assisted recording using an auxiliary energy source for heating the recording layer locally to assist the magnetization reversal · CPC title

• C23C14/04

  Coating on selected surface areas, e.g. using masks · CPC title

• C23C14/0605

  Carbon · CPC title