Magnetic field sensor with permanent magnet biasing

Patent metadata

Field	Value
Publication number	US-9897667-B2
Application number	US-201615006746-A
Country	US
Kind code	B2
Filing date	Jan 26, 2016
Priority date	Jan 26, 2016
Publication date	Feb 20, 2018
Grant date	Feb 20, 2018

Abstract

A magnetic field sensor comprises a sensor bridge having multiple sensor legs. Each sensor leg includes magnetoresistive sense elements located in a plane of the magnetic field sensor. Each sense element comprises a pinned layer and a sense layer. The pinned layer has a reference magnetization oriented parallel to the plane and the sense layer has a sense magnetization oriented out-of-plane. A permanent magnet layer may be spaced apart from the sense elements which magnetically biases the sense magnetization of the sense layer into an out-of-plane direction that is non-perpendicular to the plane of the sensor. The sense magnetization is orientable from the out-of-plane direction toward the plane of the sensor in response to an external magnetic field. The permanent magnet layer enables detection of the external magnetic field in a sensing direction that is also perpendicular to the plane of the magnetic field sensor.

First claim

What is claimed is:

1. A magnetic field sensor comprising:
a sensor bridge, said sensor bridge including multiple sensor legs, said sensor legs including magnetoresistive sense elements located in a plane of said magnetic field sensor and sensitive to an external magnetic field along a sensing direction, wherein each of said magnetoresistive sense elements comprises:
a pinned layer having a reference magnetization oriented substantially parallel to said plane; and
a sense layer having a sense magnetization that is magnetically biased to have an initial orientation, in the absence of said external magnetic field, in an out-of-plane direction relative to said plane, wherein said sense magnetization of said sense layer is orientable from said out-of-plane direction toward said plane of said magnetic field sensor in response to said external magnetic field; and

a permanent magnet layer spaced apart from said magnetoresistive sense elements, said permanent magnet layer magnetically biasing said initial orientation of said sense magnetization, in the absence of said external magnetic field, in said out-of-plane direction that is non-perpendicular to said plane of said magnetic field sensor, wherein said external magnetic field is perpendicular to said plane of said magnetic field sensor, and inclusion of said permanent magnet layer enables detection of said external magnetic field in said sensing direction that is also perpendicular to said plane of said magnetic field sensor.

2. The magnetic field sensor of claim 1 wherein said multiple sensor legs comprise:
a first sensor leg having a first one of said magnetoresistive sense elements;
a second sensor leg having a second one of said magnetoresistive sense elements;
a third sensor leg having a third one of said magnetoresistive sense elements; and
a fourth sensor leg having a fourth one of said magnetoresistive sense elements, wherein:
said first, second, third, and fourth sensor legs are coupled as a Wheatstone bridge such that said first and fourth magnetoresistive sense elements are coupled in series to form a first half of said Wheatstone bridge, said second and third magnetoresistive sense elements are coupled in series to form a second half of said Wheatstone bridge, said first half of said Wheatstone bridge is coupled in parallel with said second half of said Wheatstone bridge such that a first junction of said first and second magnetoresistive sense elements forms a first input terminal and a second junction of said third and fourth magnetoresistive sense elements forms a second input terminal;
said reference magnetization of said pinned layer of each of said first and third magnetoresistive sense elements is oriented in a first direction; and
said reference magnetization of said pinned layer of each of said second and fourth magnetoresistive sense elements is oriented in a second direction, said second direction being antiparallel to said first direction.

3. The magnetic field sensor of claim 2 wherein:
said pinned layer of each of said first and third magnetoresistive sense elements is oriented in said first direction using a thermally assisted switching process; and
said pinned layer of each of said second and fourth magnetoresistive sense elements is oriented in said second direction using said thermally assisted switching process.

4. The magnetic field sensor of claim 2 wherein said Wheatstone bridge is a first Wheatstone bridge, and said magnetic field sensor further comprises a second Wheatstone bridge, said second Wheatstone bridge including:
a fifth sensor leg having a fifth magnetoresistive sense element;
a sixth sensor leg having a sixth magnetoresistive sense element;
a seventh sensor leg having a seventh magnetoresistive sense element; and
an eighth sensor leg having an eighth magnetoresistive sense element, wherein:
said fifth and eighth magnetoresistive sense elements are coupled in series to form a first half of said second Wheatstone bridge, said sixth and seventh magnetoresistive sense elements are coupled in series to form a second half of said second Wheatstone bridge, said first half of said second Wheatstone bridge is coupled in parallel with said second half of said second Wheatstone bridge such that a third junction of said fifth and sixth magnetoresistive sense elements forms a third input terminal and a fourth junction of said seventh and eighth magnetoresistive sense elements forms a fourth input terminal.

5. The magnetic field sensor of claim 4 wherein said external magnetic field is a first external magnetic field, said sensing direction is a first sensing direction, and each of said fifth, sixth, seventh, and eighth magnetoresistive sense elements comprises:
said pinned layer having said reference magnetization oriented substantially parallel to said plane; and
said sense layer having said sense magnetization that is magnetically biased to have said initial orientation, in the absence of said external magnetic field, in a second out-of-plane direction that is perpendicular to said plane of said magnetic field sensor, said sense magnetization of said sense layer being orientable from said second out-of-plane direction toward said plane of said magnetic field sensor in response to a second external magnetic field along a second sensing direction that is orthogonal to said first sensing direction, wherein:
said reference magnetization of said pinned layer of each of said fifth and seventh magnetoresistive sense elements is oriented in a third direction that is orthogonal to said first direction; and
said reference magnetization of said pinned layer of each of said sixth and eighth magnetoresistive sense elements is oriented in a fourth direction, said fourth direction being antiparallel to said third direction.

6. The magnetic field sensor of claim 1 wherein said permanent magnet layer is characterized by a single magnetic orientation.

7. The magnetic field sensor of claim 6 wherein said single magnetic orientation is substantially parallel to said magnetic field sensor.

8. The magnetic field sensor of claim 7 wherein each of said magnetoresistive sense elements is characterized by a central axis, and said permanent magnet layer comprises a plurality of magnet segments, each of said magnet segments being laterally displaced away from said central axis of adjacent ones of said each of said magnetoresistive sense elements by an equivalent distance in a symmetric configuration.

9. The magnetic field sensor of claim 6 wherein said single magnetic orientation is substantially perpendicular to said magnetic field sensor.

10. The magnetic field sensor of claim 1 wherein said permanent magnet layer is characterized by a single thickness across an entire area of said permanent magnet layer.

11. The magnetic field sensor of claim 1 wherein said permanent magnet layer is located out-of-plane from said magnetoresistive sense elements, and said permanent magnet layer is characterized by a single out-of-plane spacing away from each of said magnetoresistive sense elements.

12. A magnetic field sensor comprising:
a sensor bridge, said sensor bridge including multiple sensor legs, said sensor legs including magnetoresistive sense elements located in a plane of said magnetic field sensor and sensitive to an external magnetic field along a sensing direction, wherein each of said magnetoresistive sense elements comprises:
a pinned layer having a reference magnetization oriented substantially parallel to said plane; and
a sense layer having a sense magnetization that is magnetically biased to have an initial orientation, in the absence of said external magnetic field, in an out-of-plan

Assignees

• Freescale Semiconductor Inc
• Nxp Usa Inc

Inventors

• Holm Paige M
• Liu Lianjun

Classifications

• G01R33/0005

  Geometrical arrangement of magnetic sensor elements; Apparatus combining different magnetic sensor types (G01R33/0206 takes precedence) · CPC title

• G01R17/10

  AC or DC measuring bridges · CPC title

• G01R33/098 Primary

  comprising tunnel junctions, e.g. tunnel magnetoresistance sensors · CPC title

• G01R33/093

  using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00) · CPC title