Selective deposition of metals, metal oxides, and dielectrics

Patent metadata

Field	Value
Publication number	US-9895715-B2
Application number	US-201514612784-A
Country	US
Kind code	B2
Filing date	Feb 3, 2015
Priority date	Feb 4, 2014
Publication date	Feb 20, 2018
Grant date	Feb 20, 2018

Abstract

Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.

First claim

We claim:

1. A method for selectively depositing a dielectric material on a first dielectric surface of a substrate relative to a second metal surface of the same substrate, the method comprising:
at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first precursor comprising Ge, Si or Mg and a second reactant;
wherein the dielectric material is selected from GeO 2 , SiO 2 and MgO;
wherein the second metal surface is treated to inhibit deposition of the dielectric material thereon prior to the at least one deposition cycle; and
wherein the dielectric material is selectively deposited on the first dielectric surface relative to the second metal surface with a selectivity of at least 80%.

2. The method of claim 1 , wherein the metal surface is oxidized prior to the at least one deposition cycle.

3. The method of claim 1 , wherein the metal surface is passivated prior to the at least one deposition cycle.

4. The method of claim 1 , wherein the first dielectric surface comprises SiO 2 , GeO 2 or a low-k surface.

5. The method of claim 1 , wherein the first precursor comprises a Ge-alkylamine and the second reactant is water.

6. The method of claim 1 , wherein the first precursor comprises an aminosilane precursor and the second reactant comprises ozone.

7. The method of claim 1 , wherein the first precursor comprises Mg(Cp) 2 and the second reactant is selected from water, ozone and a combination of water and ozone.

8. The method of claim 1 , wherein the dielectric material is selectively deposited on the first dielectric surface relative to the second metal surface with a selectivity of at least 90%.

9. The method of claim 8 , wherein the selectivity is retained for up to 20 deposition cycles.

10. The method of claim 1 , wherein the selectively deposited dielectric material is a GeO 2 or MgO pore sealing layer, and
wherein the first dielectric surface of a substrate comprises a porous, low-k film.

11. The method of claim 10 , wherein the metal surface comprises Cu.

12. The method of claim 10 , wherein the metal surface is oxidized prior to the at least one deposition cycle.

13. The method of claim 12 , wherein the metal surface comprises a CuO surface prior to the at least one deposition cycle.

14. The method of claim 10 , wherein the GeO 2 or MgO is deposited on the low-k film with a selectivity of greater than 90% relative to the metal surface.

15. The method of claim 14 , wherein the selectivity is retained for up to 20 deposition cycles.

16. The method of claim 10 , wherein the GeO 2 or MgO layer is deposited on the low-k film without significantly increasing the effective k value.

17. The method of claim 10 , wherein the sealing layer seals pores of about 3 nm or less in diameter.

18. A method for selectively depositing a material selected from Sb and Ge on a first metal surface of a substrate relative to a second, different surface of the same substrate, the method comprising:
treating the second surface to provide OH, NH x , or SH x terminations; and
subsequently carrying out at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first metal precursor comprising Sb or Ge and a second reactant;
wherein the material selected from Sb and Ge is selectively deposited on the first metal surface relative to the second, different surface with a selectivity of at least 80%.

19. The method of claim 18 , wherein the first metal surface comprises Ni, Co, Cu, Al or Ru.

20. The method of claim 19 , wherein the second surface is deactivated with respect to deposition of the material selected from Sb and Ge thereon.

21. The method of claim 18 , wherein the second surface is a dielectric surface.

22. The method of claim 18 , wherein the first metal precursor comprises a Sb reactant having the formula SbX 3 , where X is a halogen.

23. The method of claim 18 , wherein the material is selectively deposited on the first metal surface relative to the second surface with a selectivity of at least 90%.

24. The method of claim 23 , wherein the selectivity is retained at least until material of up to 5 nm thickness is deposited.

25. A method for selectively depositing a metal or metal oxide material on a first dielectric surface of a substrate relative to a second, different surface of the same substrate, the method comprising:
at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first precursor comprising Ni, Fe or Co and a second reactant, and
wherein the second, different surface is treated to inhibit deposition of the dielectric material thereon prior to the at least one deposition cycle; and
wherein the metal or metal oxide material is selectively deposited on the first dielectric surface relative to the second, different surface with a selectivity of at least 80%;
wherein the metal or metal oxide is selected from Ni, Fe, Co, NiO x , FeO x , and CoO x .

26. The method of claim 25 , wherein the first dielectric surface comprises SiO 2 , GeO 2 or a low-k surface.

27. The method of claim 25 , wherein the metal or metal oxide material is selectively deposited on the first dielectric surface relative to the second, different surface with a selectivity of at least 90%.

Assignees

• Asm Ip Holding Bv

Inventors

• Haukka Suvi P
• Matero Raija H
• Tois Eva
• Niskanen Antti
• Tuominen Marko
• Huotari Hannu
• Pore Viljami J
• Raaijmakers Ivo

Classifications

• C23C18/122

  Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes · CPC title

• C23C18/1208

  Oxides, e.g. ceramics · CPC title

• C23C16/402

  Silicon dioxide · CPC title

• C23C16/403

  of aluminium, magnesium or beryllium · CPC title

• C23C16/045

  Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates · CPC title