Insulating substrates including through holes
US-9538653-B2 · Jan 3, 2017 · US
Insulating substrates including through holes
US9894763B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9894763-B2 |
| Application number | US-201514827456-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 17, 2015 |
| Priority date | Feb 26, 2014 |
| Publication date | Feb 13, 2018 |
| Grant date | Feb 13, 2018 |
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- Title
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Abstract
Official abstract text for this publication.
It is provided an insulating substrate including through holes 2 for conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 300 μm , and a diameter of the through hole is 20 to 100 μm . The insulating substrate is composed of an alumina sintered body. A relative density and an average grain size of the alumina sintered body is 99.5 percent or higher and 2 to 50 μm , respectively.
First claim
Opening claim text (preview).
The invetion claimed is: 1. An insulating substrate including through holes for conductors, wherein said through holes are arranged in said insulating substrate and are substantially free of expanded parts: wherein a thickness of said insulating substrate is 25 to 300 μm; wherein a diameter of said through hole is 20 to 100 μm; wherein said insulating substrate comprises an alumina sintered body wherein a purity of alumina of said alumina sintered body is 99.9 percent or higher, and wherein 200 to 800 mass ppm of zirconia, 150 to 300 mass ppm of magnesia and 10 to 30 mass ppm of yttria are added to said alumina sintered body as sintering aids; wherein a relative density of said alumina sintered body is 99.5 percent or higher; and wherein an average grain size of said alumina sintered body is 2 to 50 μm. 2. The insulating substrate of claim 1 , wherein said alumina sintered body has a breakdown voltage of 50 kV/mm or higher. 3. The insulating substrate of claim 1 , wherein said through hole is formed by laser processing. 4. The insulating substrate of claim 1 , wherein said through hole are formed in molding said alumina sintered body.
Assignees
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Classifications
Apparatus or processes for manufacturing printed circuits · CPC title
Annealing after sintering · CPC title
Hydrogen containing atmosphere · CPC title
Polymers (C04B35/636 takes precedence) · CPC title
Use of materials for the substrate · CPC title
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Frequently asked questions
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- What does patent US9894763B2 cover?
- It is provided an insulating substrate including through holes 2 for conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 300 μm , and a diameter of the through hole is 20 to 100 μm . The insulating substrate is composed of an alumina sintered body. A relative density and an average grain size of the alumina sintered body is 99.5 percent or higher …
- Who is the assignee on this patent?
- Ngk Insulators Ltd
- What technology area does this patent fall under?
- Primary CPC classification H05K1/115. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 13 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).