Radio frequency switching circuitry with improved switching speed

Patent metadata

Field	Value
Publication number	US-9893722-B2
Application number	US-201615244174-A
Country	US
Kind code	B2
Filing date	Aug 23, 2016
Priority date	Apr 13, 2016
Publication date	Feb 13, 2018
Grant date	Feb 13, 2018

Abstract

RF switching circuitry includes one or more RF switching elements, a control signal input node, a common resistor, and common resistor bypass circuitry. The one or more RF switching elements are coupled in series between a switch input node and a switch output node. A state of each one of the one or more switching elements is determined based on a control signal. The control signal input node is configured to receive the control signal. The common resistor is coupled between the control signal input node and the one or more RF switching elements. The common resistor bypass circuitry is configured to receive the switching control signal and bypass the common resistor for a predetermined time period following one or more of a leading edge of the switching control signal and a falling edge of the switching control signal.

First claim

What is claimed is:

1. Radio frequency (RF) switching circuitry comprising:
one or more RF switching elements coupled in series between a switch input node and a switch output node, wherein a state of the one or more RF switching elements is determined based on a control signal;
a control signal input node configured to receive the control signal;
a common resistor coupled between the control signal input node and the one or more RF switching elements; and
common resistor bypass circuitry configured to receive the control signal and bypass the common resistor for a predetermined time period following one or more of a leading edge of the control signal and a falling edge of the control signal.

2. The RF switching circuitry of claim 1 wherein:
the one or more RF switching elements comprise a plurality of RF switching field-effect transistors (FETs) each having a gate contact, a drain contact, and a source contact; and
a drain contact of a first one of the plurality of RF switching FETs is coupled to the switch input node, a source contact of a last one of the plurality of RF switching FETs is coupled to the switch output node, and adjacent ones of the plurality of RF switching FETs are coupled drain contact to source contact.

3. The RF switching circuitry of claim 2 further comprising:
a plurality of parallel resistors, each coupled between a drain contact and a source contact of a different one of the plurality of RF switching FETs; and
a plurality of gate resistors, each coupled between a gate of a different one of the plurality of RF switching FETs and a common node.

4. The RF switching circuitry of claim 3 wherein the common resistor is coupled between the control signal input node and the common node.

5. The RF switching circuitry of claim 4 wherein the common resistor bypass circuitry is configured to:
receive the control signal;
detect a leading edge of the control signal;
provide a low impedance path around the common resistor for the predetermined time period after detection of the leading edge of the control signal;
detect a falling edge of the control signal; and
provide a low impedance path around the common resistor for the predetermined time period after detection of the falling edge of the control signal.

6. The RF switching circuitry of claim 5 wherein the predetermined time period is between 100 picoseconds and 50 nanoseconds.

7. The RF switching circuitry of claim 5 wherein the common resistor bypass circuitry comprises:
edge detector circuitry configured to receive the control signal and provide a bypass control signal indicating the detection of the leading edge of the control signal and the falling edge of the control signal; and
bypass switching circuitry configured to provide a low impedance path around the common resistor in response to the bypass control signal.

8. The RF switching circuitry of claim 7 wherein the bypass switching circuitry comprises at least one bypass FET having a gate contact coupled to an output of the edge detector circuitry such that a state of the at least one bypass FET is determined based on the bypass control signal, a source contact coupled to the control signal input node, and a drain contact coupled to the common node.

9. The RF switching circuitry of claim 7 wherein:
the bypass switching circuitry comprises a plurality of bypass FETs each comprising a gate contact coupled to an output of the edge detector circuitry such that a state of the plurality of bypass FETs is determined based on the bypass control signal, a drain contact, and a source contact;
a drain contact of a first one of the plurality of bypass FETs is coupled to the common node, a source contact of a last one of the plurality of bypass FETs is coupled to the control signal input node, and adjacent ones of the plurality of bypass FETs are coupled drain contact to source contact; and
the common resistor comprises a plurality of common resistors each coupled between a drain contact and a source contact of a different one of the plurality of bypass FETs.

10. The RF switching circuitry of claim 7 wherein the RF switching circuitry is series RF switching circuitry configured to selectively pass an RF signal provided at the switch input node to the switch output node based on the control signal.

11. The RF switching circuitry of claim 7 wherein the RF switching circuitry is shunt RF switching circuitry configured to selectively couple the switch input node to ground based on the control signal.

12. The RF switching circuitry of claim 7 wherein the predetermined period of time is between 100 picoseconds and 50 nanoseconds.

13. The RF switching circuitry of claim 1 wherein the common resistor bypass circuitry is configured to:
receive the control signal;
detect a leading edge of the control signal;
provide a low impedance path around the common resistor for the predetermined time period after detection of the leading edge of the control signal;
detect a falling edge of the control signal; and
provide a low impedance path around the common resistor for the predetermined time period after detection of the falling edge of the control signal.

14. The RF switching circuitry of claim 13 wherein the predetermined period of time is between 100 picoseconds and 50 nanoseconds.

15. The RF switching circuitry of claim 13 wherein the common resistor bypass circuitry comprises:
edge detector circuitry configured to receive the control signal and provide a bypass control signal indicating the detection of the leading edge of the control signal and the falling edge of the control signal; and
bypass switching circuitry configured to provide a low impedance path around the common resistor in response to the bypass control signal.

16. The RF switching circuitry of claim 15 wherein the bypass switching circuitry comprises at least one bypass FET having a gate contact coupled to an output of the edge detector circuitry such that a state of the at least one bypass FET is determined based on the bypass control signal, a source contact coupled to the control signal input node, and a drain contact coupled to the common node.

17. The RF switching circuitry of claim 15 wherein:
the bypass switching circuitry comprises a plurality of bypass FETs each comprising a gate contact coupled to an output of the edge detector circuitry such that a state of the plurality of bypass FETs is determined based on the bypass control signal, a drain contact, and a source contact;
a drain contact of a first one of the plurality of bypass FETs is coupled to the common node, a source contact of a last one of the plurality of bypass FETs is coupled to the control signal input node, and adjacent ones of the plurality of bypass FETs are coupled drain contact to source contact; and
the common resistor comprises a plurality of common resistors each coupled between a drain contact and a source contact of a different one of the plurality of bypass FETs.

18. The RF switching circuitry of claim 15 wherein the RF switching circuitry is series RF switching circuitry configured to selectively pass an RF signal provided at the switch input node to the switch output node based on the control signal.

19. The RF switching circuitry of claim 18 wherein the RF switching circuitry is shunt RF switching circuitry configured to selectively couple the switch input node to ground based on the control signal.

20. The RF switching circuitry of claim 1 wherein the predetermined period of time is between 100 picoseconds and 5

Assignees

• Qorvo Us Inc

Inventors

• Mokalla Mehra

Classifications

• H03K5/1534

  Transition or edge detectors · CPC title

• H03K17/04106 Primary

  in field-effect transistor switches (H03K17/0412, H03K17/0416 take precedence) · CPC title

• H03K19/21

  EXCLUSIVE-OR circuits, i.e. giving output if input signal exists at only one input; COINCIDENCE circuits, i.e. giving output only if all input signals are identical · CPC title