Edge-emitting etched-facet lasers

Patent metadata

Field	Value
Publication number	US-9893488-B2
Application number	US-201514595848-A
Country	US
Kind code	B2
Filing date	Jan 13, 2015
Priority date	Dec 8, 2011
Publication date	Feb 13, 2018
Grant date	Feb 13, 2018

Abstract

A laser chip having a substrate, an epitaxial structure on the substrate, the epitaxial structure including an active region and the active region generating light, a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser, and a first recessed region formed in the epitaxial structure, the first recessed region being arranged at a distance from the waveguide and having an opening adjacent to the back etched facet, the first recessed region facilitating testing of an adjacent laser chip prior to singulation of the laser chip.

First claim

The invention claimed is:

1. A laser structure comprising: a substrate; an epitaxial structure on the substrate, the epitaxial structure including an active region for generating light; a waveguide formed in the epitaxial structure extending in a first direction, the waveguide having a front etched facet and a back etched facet that define an edge-emitting laser; a first recessed region formed in the epitaxial structure adjacent to the waveguide, the first recessed region including a first end wall and having an opening adjacent to the back etched facet, the first end wall spaced apart from a first adjacent laser chip to minimize back-reflection to and facilitate testing of the first adjacent laser chip prior to singulation of the first adjacent laser chip from the substrate; and a second recessed region formed in the epitaxial structure adjacent to the waveguide, the second recessed region including a second end wall and having an opening adjacent to the front etched facet, the second end wall spaced apart from a second adjacent laser chip to minimize back-reflection to and facilitate testing of the second adjacent laser chip prior to singulation of the second adjacent laser chip from the substrate; wherein the first and second recessed regions and the first and second etched facets are all formed in a common contiguous portion of the epitaxial structure defining the edge-emitting laser, wherein the common contiguous portion of the epitaxial structure is spaced apart from and does not include the first and second adjacent laser chips.

2. The laser structure of claim 1 , wherein the first end wall is at an angle other than normal to the first direction.

3. The laser structure of claim 1 , wherein the back etched facet is coated with a highly reflective material.

4. The laser structure of claim 1 , wherein the second end wall is at angle other than normal to the first direction.

5. The laser structure of claim 1 , wherein the opening to the first recessed region and the opening to the second recessed region are aligned to each other.

6. The laser structure of claim 1 , wherein the edge-emitting laser is a ridge laser.

7. The laser structure of claim 6 , wherein the ridge laser is of a Fabry-Perot (FP) type.

8. The laser structure of claim 6 , wherein the ridge laser is of a distributed feedback (DFB) type.

9. The laser structure of claim 1 , wherein the edge-emitting laser is a Buried Heterostructure (BH) laser.

10. The laser structure of claim 9 , wherein the BH laser is of a Fabry-Perot (FP) type.

11. The laser structure of claim 9 , wherein the BH laser is of a distributed feedback (DFB) type.

12. The laser structure of claim 1 , wherein the substrate is InP.

13. The laser structure of claim 1 , wherein the substrate is GaAs.

14. The laser structure of claim 1 , wherein the substrate is GaN.

15. The laser structure of claim 1 , wherein an electrical contact is formed on the common contiguous portion of the epitaxial structure adjacent to the waveguide and the first and second recessed regions.

16. A laser structure comprising: a substrate; an epitaxial structure on the substrate, the epitaxial structure including an active region for generating light; a first waveguide formed in a first portion of the epitaxial structure extending in a first direction, the first waveguide having a first front etched facet and a first back etched facet that define a first edge-emitting laser; a second waveguide formed in a second portion of the epitaxial structure extending in the first direction, the second waveguide having a second front etched facet and a second back etched facet that define a second edge-emitting laser; and a recessed region formed in the first portion of the epitaxial structure adjacent to the first waveguide, the recessed region including an end wall and having an opening directly opposing the second front etched facet of the second waveguide, the end wall spaced apart from the second front etched facet of the second waveguide to minimize back-reflection to and facilitate testing of the second waveguide prior to singulation of the second portion of the epitaxial structure from the substrate; wherein the first portion of the epitaxial structure is a common contiguous portion of the epitaxial structure comprising the recessed region and the first front and back etched facets defining the first edge-emitting laser, wherein the first portion of the epitaxial structure is spaced apart from and does not include the second portion of the epitaxial structure.

17. The laser structure of claim 16 , wherein light from the second front etched facet of the second waveguide impinges on the end wall.

18. The laser structure of claim 17 , wherein the end wall is at an angle other than normal to the first direction.

19. The laser structure of claim 16 , wherein at least one of the first back etched facet and the second back etched facet is coated with a highly reflective material.

20. The laser structure of claim 16 , wherein the edge-emitting laser is a ridge laser.

21. The laser structure of claim 16 , wherein an electrical contact is formed on the first portion of the epitaxial structure adjacent to the waveguide and the recessed region.

Assignees

• Macom Tech Solutions Holdings Inc

Inventors

• Behfar Alex A
• Green Malcolm R
• Stagarescu Cristian

Classifications

• H01S5/0014 Primary

  Measuring characteristics or properties thereof (measuring techniques per se G01J, G01K, G01N, G01R) · CPC title

• H01S5/34306

  emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers · CPC title

• H01S5/0287

  Facet reflectivity · CPC title

• H01S5/20

  Structure or shape of the semiconductor body to guide the optical wave {; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers} · CPC title

• H01S5/0201

  Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth · CPC title