Light emitting device and light emitting apparatus having the same

Patent metadata

Field	Value
Publication number	US-9893235-B2
Application number	US-201514618599-A
Country	US
Kind code	B2
Filing date	Feb 10, 2015
Priority date	Nov 16, 2011
Publication date	Feb 13, 2018
Grant date	Feb 13, 2018

Abstract

A light emitting device is provided a transmissive substrate; a first pattern portion including a protrusions; a second pattern portion including a concaves having a width smaller than a width of each protrusion; a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer, under the transmissive substrate; a first electrode under the first conductive semiconductor layer; a reflective electrode layer under the second conductive semiconductor layer; a second electrode under the reflective electrode layer; a first connection electrode under the first electrode; a second connection electrode under the second electrode; and an insulating support member around the first electrode and the first connection electrode and around the second electrode and the second connection electrode. A transmissive resin layer is on the transmissive substrate and an insulating layer is between the insulating support member and the reflective electrode layer.

First claim

What is claimed is:

1. A light emitting device comprising:
a transmissive substrate;
a first pattern portion disposed on a top surface of the transmissive substrate and including a plurality of protrusions;
a second pattern portion disposed on the top surface of the transmissive substrate and the plurality of protrusions, and the second pattern portion including a plurality of concaves;
a light emitting structure disposed under a bottom surface of the transmissive substrate and including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;
a transmissive resin layer on the plurality of protrusions and the plurality of concaves;
a first semiconductor layer disposed between the light emitting structure and the transmissive substrate and physically contacted with the bottom surface of the transmissive substrate;
a first electrode under the first conductive semiconductor layer;
a reflective electrode layer under the second conductive semiconductor layer;
a second electrode under the reflective electrode layer;
a first connection electrode under the first electrode;
a second connection electrode under the second electrode;
an insulating support member disposed under the reflective electrode layer; and
an insulating layer between the insulating support member and the reflective electrode layer,
wherein the first connection electrode and the second connection electrode are overlapped with the first conductive semiconductor layer in a vertical direction,
wherein a thickness of the insulating support member is greater than a thickness of the insulating layer in the vertical direction,
wherein the plurality of concaves includes a plurality of first concaves in the plurality of protrusions and a plurality of second concaves in a region of the top surface of the transmissive substrate disposed between the plurality of protrusions,
wherein each first concave of the plurality of first concaves has a concave shape from a curved top surface of a protrusion of the plurality of protrusions,
wherein each first concave of the plurality of first concaves has a bottom portion having a width smaller than a width of a top portion thereof,
wherein each first concave of the plurality of first concaves is recessed in a direction inward from the curved top surface of a protrusion of the plurality of protrusions,
wherein each first concave of the plurality of first concaves has a width gradually narrowed toward the bottom surface of the transmissive substrate,
wherein each second concave of the plurality of second concaves has a width gradually narrowed in a direction toward the bottom surface of the transmissive substrate,
wherein the plurality of second concaves are spaced apart from each other,
wherein a bottom portion of each protrusion of the plurality of protrusions has a width smaller than a width of the first connection electrode,
wherein the insulating support member includes a ceramic-based thermal diffusion agent,
wherein the insulating support member includes a first support member around the first electrode and the first connection electrode, a second support member around the second electrode and the second connection electrode, and a divided slot disposed between the first support member and the second support member, the first support member being completely separated from the second support member by the divided slot, and
wherein a depth of the divided slot is the same as a thickness of the second support member of the insulating support member in the vertical direction.

2. The light emitting device of claim 1 ,
wherein the plurality of first concaves are spaced apart from each other.

3. The light emitting device of claim 2 , further comprising a phosphor layer on the transmissive resin layer, wherein a part of the phosphor layer contacts a part of the plurality of protrusions.

4. The light emitting device of claim 3 , wherein the transmissive resin layer is disposed between the transmissive substrate and the phosphor layer, wherein a part of the transmissive resin layer is disposed in each concave of the plurality of concaves,
wherein the transmissive resin layer has a thickness smaller than a thickness of the transmissive substrate in the vertical direction.

5. The light emitting device of claim 3 , wherein the phosphor layer includes a lateral portion disposed on a plurality of side surfaces of the light emitting structure.

6. The light emitting device of claim 2 , further comprising a printed circuit board under the insulating support member,
wherein the printed circuit board includes a first electrode pad connected to the first connection electrode and a second electrode pad connected to the second connection electrode, and
wherein a bottom surface of the insulating support member is spaced apart from a top surface of the printed circuit board.

7. The light emitting device of claim 1 , wherein the plurality of protrusions have a hemispheric shape, and
wherein the plurality of protrusions are aligned at a regular interval and the plurality of concaves are aligned at an irregular interval.

8. The light emitting device of claim 7 , wherein the top portion of each concave of the plurality of first concaves has the width corresponding to 50% or less based on the width of the bottom portion of each protrusion of the plurality of protrusions.

9. The light emitting device of claim 8 , wherein the width of the bottom portion of each protrusion of the plurality of protrusions is in a range of 0.1 μm to 10 μm.

10. The light emitting device of claim 1 , wherein the ceramic-based thermal diffusion agent comprises at least one of oxide, nitride, fluoride and sulfide including at least one of Al, Cr, Si, Ti, Zn and Zr.

11. The light emitting device of claim 1 , wherein a distance between the first and second connection electrodes is ½ or more of a length of one lateral side of the transmissive substrate,
wherein a lower surface of the insulating layer is exposed through the divided slot, and
wherein a width of the divided slot is greater than the width of the first connection electrode.

12. The light emitting device of claim 1 , wherein the thickness of the insulating layer is smaller than a thickness of the first electrode and a thickness of the second electrode, and
wherein the first insulating support member contacts lateral surfaces of the first electrode and the first connection electrode.

13. The light emitting device of claim 12 , wherein the insulating layer includes a Distributed Bragg Reflection (DBR) structure in which first and second layers having refractive indexes different from each other are alternately aligned.

14. A light emitting device comprising:
a transmissive substrate;
a first pattern portion disposed on a top surface of the transmissive substrate and including a plurality of protrusions;
a second pattern portion disposed on the top surface of the transmissive substrate and the plurality of protrusions, and the second pattern portion including a plurality of concaves;
a buffer layer physically contacted with a bottom surface of the transmissive substrate and formed of a semiconductor layer;
a first semiconductor layer under the buffer layer;
an active layer under the first semiconductor layer,
a second semiconductor layer under the active layer;
a transmissive resin layer on the plurality of protrusions and the plurality of concaves;
a first electrode under the first semiconductor layer;
a reflective electrode layer under the second

Assignees

• Lg Innotek Co Ltd
• Lg Innotek Co Ltd

Inventors

• Kang Pil Geun
• Choi Hee Seok
• Choi Seok Beom
• Lee Ju Won
• Hwang Deok Ki
• Han Young Ju

Classifications

• H10W90/726

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H01L2924/01322

  Electricity · mapped topic

• H01L2224/16245

  Electricity · mapped topic

• H01L33/644

  Electricity · mapped topic

• H01L33/50

  Electricity · mapped topic