Method of forming an array of a multi-device unit cell

Patent metadata

Field	Value
Publication number	US-9893041-B2
Application number	US-201715485747-A
Country	US
Kind code	B2
Filing date	Apr 12, 2017
Priority date	Apr 15, 2016
Publication date	Feb 13, 2018
Grant date	Feb 13, 2018

Abstract

Backplane-side bonding structures including a common metal are formed on a backplane. Multiple source coupons are provided such that each source coupon includes a transfer substrate and an array of devices to be transferred. Each array of devices are arranged such that each array includes a unit cell structure including multiple devices of the same type and different types of bonding structures including different metals that provide different eutectic temperatures with the common metal. Different types of devices can be sequentially transferred to the backplane by sequentially applying the supply coupons and selecting devices providing progressively higher eutectic temperatures between respective bonding pads and the backplane-side bonding structures. Previously transferred devices stay on the backplane during subsequent transfer processes, enabling formation of arrays of different devices on the backplane.

First claim

What is claimed is:

1. A method of forming a device assembly, comprising:
providing a backplane including a periodic array of multiple instances of a backplane-side unit cell structure that comprises a set of backplane-side bonding structures including a common metal;
providing a first source coupon including a first transfer substrate and a periodic array of multiple instances of a first unit cell structure that comprises at least one first device and having a same periodicity as the periodic array of multiple instances of the backplane-side unit cell structure, wherein an instance of a first device-side bonding structure including a first metal is provided on one first device per each first unit cell structure, and the common metal and the first metal are selected to provide a first bonding metallurgy having a first eutectic temperature upon bonding;
transferring one first device from each instance of the first unit cell structure to the backplane by bonding respective instances of the first device-side bonding structure to matching backplane-side bonding structures, wherein a periodic array of first bonded material portions having the first bonding metallurgy is formed while backplane-side bonding structures that are not bonded do not reflow;
providing a second source coupon including a second transfer substrate and a periodic array of multiple instances of a second unit cell structure that comprises at least one second device and having a same periodicity as the periodic array of multiple instances of the backplane-side unit cell structure, wherein an instance of a second device-side bonding structure including a second metal is provided on one second device per each second unit cell structure, and the common metal and the second metal are selected to provide a second bonding metallurgy having a second eutectic temperature upon bonding, and the second eutectic temperature is greater than the first eutectic temperature; and
transferring one second device from each instance of the second unit cell structure to the backplane by bonding respective instances of the second device-side bonding structure to matching backplane-side bonding structures.

2. The method of claim 1 , wherein:
a periodic array of second bonded material portions having the second bonding metallurgy is formed by transfer of the second devices; and
the periodic array of first bonded material portions changes composition by partial evaporation of the first metal during transfer of the second devices.

3. The method of claim 1 , wherein:
the first unit cell structure comprises at least two first devices;
an instance of the first device-side bonding structure is provided on one of the at least two first devices;
an instance of the second device-side bonding structure is provided on another of the at least two first devices; and
first devices provided with respective instances of the second device-side bonding structure are not transferred to the backplane during transfer of the first devices provided with respective instances of the first device-side bonding structure.

4. The method of claim 3 , wherein instances of the second device-side bonding structure on the first devices on the first transfer substrate are in physical contact with respective backplane-side bonding structures without reflowing during transfer of the first devices provided with respective instances of the first device-side bonding structure to the backplane.

5. The method of claim 3 , wherein:
the second unit cell structure comprises at least two second devices;
an instance of the second device-side bonding structure is provided on one of the at least two second devices;
an instance of a third device-side bonding structure comprising a third metal is provided on another of the at least two devices, wherein the common metal and the third metal are selected to provide a third bonding metallurgy having a third eutectic temperature upon bonding, and the third eutectic temperature is greater than the first and second eutectic temperatures; and
second devices provided with respective instances of the third device-side bonding structure are not transferred to the backplane during transfer of the second devices provided with respective instances of the second device-side bonding structure.

6. The method of claim 5 , wherein the first, second, and third devices comprise red light-emitting diodes, green light-emitting diodes, and blue light-emitting diodes.

7. The method of claim 5 , further comprising:
providing a third source coupon including a third transfer substrate and a periodic array of multiple instances of a third unit cell structure that comprises at least one third device and having a same periodicity as the periodic array of multiple instances of the backplane-side unit cell structure, wherein an instance of the third device-side bonding structure is provided on one third device per each third unit cell structure; and
transferring one third device from each instance of the third unit cell structure to the backplane by bonding respective instances of the third device-side bonding structure to matching backplane-side bonding structures.

8. The method of claim 7 , wherein:
a periodic array of third bonded material portions having the third bonding metallurgy is formed by transfer of the third devices;
the periodic array of first bonded material portions changes composition by partial evaporation of the first metal during transfer of the third devices; and
the periodic array of second bonded material portions changes composition by partial evaporation of the second metal during transfer of the third devices.

9. The method of claim 7 , wherein each of the periodic array of first bonded material portions, the periodic array of second bonded material portions, and the periodic array of third bonded material portions has a same periodicity as the periodic array of multiple instances of the backplane-side unit cell structure.

10. The method of claim 9 , wherein the periodic array of multiple instances of the backplane-side unit cell structure is a two-dimensional rectangular periodic array in which the multiple instances of the backplane-side unit cell structure are repeated in two orthogonal directions that are perpendicular to a surface of the backplane.

11. The method of claim 7 , wherein the device assembly is an integrated light emitting device assembly that comprises an emissive display panel containing light emitting diodes that emit three or more different colors.

12. The method of claim 11 , wherein the emissive display panel comprises a direct view display panel containing red, green, and blue wavelength light emitting diodes and sensors bonded to the backplane.

13. The method of claim 7 , further comprising:
providing a fourth source coupon including a fourth transfer substrate and a periodic array of multiple instances of a fourth unit cell structure that comprises at least one fourth device and having a same periodicity as the periodic array of multiple instances of the backplane-side unit cell structure, wherein an instance of the fourth device-side bonding structure is provided on one fourth device per each fourth unit cell structure, and the common metal and the fourth metal are selected to provide a fourth bonding metallurgy having a fourth eutectic temperature upon bonding, and the fourth eutectic temperature is greater than the first, second, and third eutectic temperatures; and
transferring one fourth device from each instance of the fourth unit cell structure to the backplane by bonding respective instances of the fourth device-side bonding structure to matching backplane-side bonding stru

Assignees

• Glo Ab

Inventors

• Pokhriyal Anusha
• Farrens Sharon N

Classifications

• H10P72/7434

  used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate · CPC title

• H10P72/7432

  used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate · CPC title

• H10P72/74

  using temporarily an auxiliary support · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W90/00 Primary

  Package configurations · CPC title