Method for tuning the effective work function of a metal

Patent metadata

Field	Value
Publication number	US-9892923-B2
Application number	US-201514757811-A
Country	US
Kind code	B2
Filing date	Dec 22, 2015
Priority date	Dec 22, 2014
Publication date	Feb 13, 2018
Grant date	Feb 13, 2018

Abstract

The disclosed technology generally relates to integrated circuit devices and methods of forming the same, and more particularly to metal electrodes whose effective work function can be tuned. In one aspect, a method of forming a metal electrode of a semiconductor structure includes providing a semiconductor substrate having at least a region covered with a dielectric. The semiconductor substrate is introduced into a chamber configured for atomic layer deposition (ALD). A metal for the metal electrode is deposited at least on the dielectric by performing an ALD cycle. Performing the ALD cycle includes pulsing a Ti-containing precursor gas followed by pulsing a Ta-containing precursor gas, and further includes pulsing NH 3 gas.

First claim

What is claimed is:

1. A method of forming a metal-oxide-semiconductor (MOS) device comprising forming an n-type MOS (n-MOS) device, forming the n-MOS device comprising:
providing a semiconductor substrate at least partially covered with a dielectric;
introducing the semiconductor substrate into a chamber configured for atomic layer deposition (ALD);
depositing a metal electrode on the dielectric by performing an ALD cycle, performing the ALD cycle comprising pulsing a Ti-containing precursor gas followed by pulsing a Ta-containing precursor gas, wherein one or both of pulsing the Ti-containing precursor gas and pulsing the Ta-containing precursor gas comprises partially saturating a deposition surface, performing the ALD cycle further comprising pulsing NH 3 gas,
wherein the metal electrode is a Ti x Ta y N z layer formed of a plurality of Ti x Ta y N z monolayers in which each Ti x Ta y N z monolayer comprises both Ti and Ta atoms, wherein x+y is about 0.5 and x+y+z is about 1, and wherein x/y ratio is between about 0.1 and about 0.4; and
depositing on the metal electrode an Al-comprising metal, wherein depositing the Al-comprising metal forms a metal stack of an n-MOS gate electrode having an effective work function (EWF) below 4.76 eV.

2. The method according to claim 1 , wherein each of pulsing the Ti-containing precursor and pulsing the Ta-containing precursor comprises partially saturating the deposition surface, such that a homogeneous metal is formed.

3. The method according to claim 2 , wherein the Ti-containing precursor is TiCl 4 and the Ta-containing precursor is TaCl 5 .

4. The method according to claim 3 , wherein the ALD cycle is a thermal ALD cycle performed at a substrate temperature between 400° C. and 500° C.

5. The method according to claim 1 , wherein the dielectric comprises at least a layer of a high-K dielectric material having a dielectric constant higher than that of SiO 2 .

6. The method according to claim 1 , wherein the method of forming the MOS further comprises forming a p-type MOS (p-MOS) device, wherein forming the p-MOS device comprises depositing a second metal electrode having the same composition as the metal electrode without depositing on the second metal an Al-comprising metal.

7. The method according to claim 6 , wherein the Al-comprising metal is an alloy formed of Ti and Al.

8. The method according to claim 1 , wherein performing the ALD cycle comprises repeating the ALD cycle for a predetermined number (p) of times.

9. The method according to claim 1 , wherein the ALD cycle comprises a first sub-cycle comprising a plurality of first unit cycles repeated for a first number (n) of times, each first unit cycle comprising alternating pulses of the Ti-containing precursor gas and the NH 3 gas, wherein the ALD cycle further comprises a second sub-cycle comprising a plurality of second unit cycles repeated for a second number (m) of times, each second unit cycle comprising alternating pulses of the Ta-containing precursor gas and the NH 3 gas.

10. The method according to claim 9 , wherein pulsing the NH 3 gas is performed after pulsing the Ti-containing precursor gas within each first unit cycle, and wherein pulsing the NH 3 gas is performed after pulsing the Ta-containing precursor gas within each second unit cycle.

11. A method of forming a metal electrode of a semiconductor structure, the method comprising:
providing a semiconductor substrate at least partially covered with a dielectric;
introducing the semiconductor substrate into a chamber configured for atomic layer deposition (ALD);
depositing a metal on the dielectric by performing an ALD cycle, performing the ALD cycle comprising pulsing a Ti-containing precursor gas followed by pulsing a Ta-containing precursor gas, performing the ALD cycle further comprising pulsing NH 3 gas,
wherein the ALD cycle comprises a unit cycle comprising pulsing the Ti-containing precursor gas and pulsing the Ta-containing precursor gas without an intervening NH 3 gas pulse, and
wherein the metal is a Ti x Ta y N z layer formed of a plurality of Ti x Ta y N z monolayers in which each Ti x Ta y N z monolayer comprises both Ti and Ta atoms, wherein x+y is about 0.5 and x+y+z is about 1, and wherein x/y ratio is between about 0.1 and about 0.4, and
depositing on the metal an Al-comprising metal, wherein depositing the Al-comprising metal forms a metal stack of MOS gate electrode having an effective work function (EWF) below 4.76 eV.

12. The method according to claim 11 , wherein the unit ALD cycle comprises pulsing the Ti-containing precursor before pulsing the Ta-containing precursor gas.

13. The method according to claim 12 , wherein pulsing the NH 3 gas is performed after pulsing the Ta-containing precursor gas.

14. A metal-oxide-semiconductor (MOS) device comprising an n-type MOS (n-MOS) device, the n-MOS device comprising:
a semiconductor structure formed on a semiconductor substrate;
a dielectric formed at least on a region of the semiconductor structure;
a metal electrode formed on the dielectric, the metal electrode comprising a Ti x Ta y N z layer, wherein x+y+z=1, x+y=0.5, x/y ratio is between about 0.1 and about 0.4, and 0<x, y, z<1, and wherein the metal electrode has a thickness between about 1 nm and about 3 nm; and
an Al-comprising metal formed on the metal electrode, wherein the Al-comprising metal forms a metal stack of an n-MOS gate electrode having an effective work function (EWF) below 4.76 eV.

15. The MOS device according to claim 14 , wherein the dielectric comprises at least a layer of a dielectric material having a high-K dielectric material having a dielectric constant higher than that of SiO 2 .

16. The MOS device according to claim 14 , wherein the Ti x Ta y N z layer is a homogeneous Ti x Ta y N z layer formed of a plurality of Ti x Ta y N z monolayers in which each Ti x Ta y N z monolayer comprises both Ti and Ta atoms.

17. The MOS device according to claim 14 , wherein the MOS device further comprises a p-type MOS (p-MOS) device, wherein the p-MOS device comprises a second metal electrode having the same composition as the metal electrode without having formed thereon an Al-comprising metal.

18. The MOS device according to claim 17 , wherein the Al-comprising metal is formed of an alloy of Ti and Al.

Assignees

• Imec Vzw

Inventors

• Dekkers Hendrik F W
• Ragnarsson Lars Ake
• Schram Tom

Classifications

• H10D64/01318 Primary

  the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN (comprising a layer of alloys of Si, Ge or C H10D64/01314) · CPC title

• H01L29/66795

  Electricity · mapped topic

• H01L21/28088 Primary

  Electricity · mapped topic

• H01L21/823842

  Electricity · mapped topic

• H01L29/517

  Electricity · mapped topic