Epitaxial structure with air voids in shape of trapezoid

Patent metadata

Field	Value
Publication number	US-9892911-B2
Application number	US-201715428416-A
Country	US
Kind code	B2
Filing date	Feb 9, 2017
Priority date	Jul 6, 2012
Publication date	Feb 13, 2018
Grant date	Feb 13, 2018

Abstract

An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the first epitaxial layer.

First claim

What is claimed is:

1. An epitaxial structure, comprises:
a substrate;
a buffer layer disposed on the substrate;
a first epitaxial layer disposed over the buffer layer, wherein the first epitaxial layer includes at least one cavity that exposes a portion of the buffer layer; and
a second epitaxial layer disposed on the first epitaxial layer, wherein the second epitaxial layer has at least one concave portion, and the cavity and the concave portion are aligned to define an air void in a shape of trapezoid on the buffer layer.

2. The epitaxial structure according to claim 1 , wherein a top portion of the air void is the concave portion of the second epitaxial layer and comprises three facets, and a bottom portion of the air void lands on the buffer layer and is substantially planar.

3. The epitaxial structure according to claim 2 , wherein the air void has a height of about 0.5 μm to about 3 μm, and the bottom portion of the air void has a width of about 0.5 μm to about 5 μm.

4. An epitaxial structure, comprises:
a substrate;
a patterned sacrifice layer disposed on the substrate;
a first epitaxial layer disposed over the patterned sacrifice layer and the substrate, wherein the first epitaxial layer includes at least one cavity that exposes a portion of the patterned sacrifice layer; and
a second epitaxial layer disposed on the first epitaxial layer, wherein the second epitaxial layer has at least one concave portion, and the cavity and the concave portion are aligned to define an air void in a shape of trapezoid on the patterned sacrifice layer.

5. The epitaxial structure according to claim 4 , wherein a top portion of the air void is the concave portion of the second epitaxial layer and comprises three facets, and a bottom portion of the air void lands on the patterned sacrifice layer and is substantially planar.

6. The epitaxial structure according to claim 5 , wherein the air void has a height of about 0.5 μm to about 3 μm, and the bottom portion of the air void has a width of about 0.5 μm to about 5 μm.

Assignees

• Lextar Electronics Corp

Inventors

• Chen jun rong
• Chou Hsiu Mei
• Ye Jhao Cheng

Classifications

• H10P14/3416

  Nitrides · CPC title

• H10P14/3216 Primary

  Nitrides · CPC title

• H10P14/2921

  being crystalline insulating materials · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title

• H10P14/278

  Pendeoepitaxy · CPC title