Electrochemically activated C-MEMS electrodes for on-chip micro-supercapacitors

US9892869B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9892869-B2
Application numberUS-201213441268-A
CountryUS
Kind codeB2
Filing dateApr 6, 2012
Priority dateApr 6, 2011
Publication dateFeb 13, 2018
Grant dateFeb 13, 2018

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  1. Title

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  2. Abstract

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  5. First independent claim

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  6. CPC / IPC classifications

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Abstract

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Disclosed herein are methods of manufacturing micro-super capacitors from C-MEMS structures.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for forming an electrochemical double layer capacitor, comprising: electrochemically activating a surface of a C-MEMS carbon structure in the presence of 0.1 M to 2 M acid in an aqueous solution by exposing the surface to an electrochemical cell to increase the surface area of the C-MEMS carbon structure by at least 100-fold and thereby increase the double layer capacitance of the C-MEMS carbon structure, wherein electrochemically activating the surface of the C-MEMS comprises: anodizing the surface of the C-MEMS carbon structure by applying a positive voltage using the electrochemical cell; and negatively polarizing the anodized C-MEMS carbon structure by applying a negative voltage using the electrochemical cell, and wherein the C-MEMS carbon structure is a patterned and pyrolized negative tone photoresist polymer, and the pattern of the patterned and pyrolized negative tone photoresist polymer is created through a photolithography process. 2. The method of claim 1 , wherein the activating further comprises applying a voltage of from 1.5 to 4 V with respect to a Ag/AgCl reference electrode. 3. The method of claim 2 , wherein the positive voltage is applied for about 15 minutes to about 45 min. 4. The method of claim 1 , wherein the acid comprises sulfuric acid, nitric acid, phosphoric acid, hydrochloric acid, or a mixture thereof. 5. The method of claim 1 , wherein the acid has a concentration of about 0.5 M to about 2 M. 6. The method of claim 1 , wherein the increase in surface area is 500 times or greater than the surface area of the C-MEMS carbon structure prior to activation. 7. The method of claim 1 , further comprising forming the C-MEMS carbon structure by spin coating a negative tone photoresist polymer on a substrate; exposing the negative tone photoresist polymer to UV light to form a first intermediate; spin coating a second negative tone photoresist polymer on the first intermediate to form a second intermediate; and exposing the second intermediate to UV light and pyrolizing the resulting material to form the C-MEMS carbon structure. 8. The method of claim 7 , comprising: applying a positive voltage of 1.9 V with respect to a Ag/AgCl reference electrode for about 10 minutes to about 30 minutes in the presence of a 0.5M aqueous sulfuric acid solution to the C-MEMS carbon structure; and negatively polarizing the C-MEMS carbon structure by applying a potential difference of −0.3 V. 9. The method of claim 8 , wherein the negative tone photoresist polymer comprises SU-8. 10. The method of claim 1 , wherein the negative tone photoresist polymer comprises SU-8. 11. A method of activating a surface of a C-MEMS carbon structure to form an electrochemical double layer capacitor comprising: applying a voltage of 1.5 to 4 V with respect to a Ag/AgCI reference electrode to the surface for about 15 minutes to about 45 minutes in the; negatively polarizing the C-MEMS carbon structure by applying a potential difference; and wherein the C-MEMS carbon structure is a patterned and pyrolized negative tone photoresist polymer. 12. The method of claim 11 , wherein the negative tone photoresist polymer comprises SU-8. 13. A method of activating a surface of a C-MEMS carbon structure to form an electrochemical double layer capacitor, comprising: applying a positive voltage with respect to a Ag/AgCl reference electrode to the C-MEMS carbon structure in the presence of a 0.1 M to 2 M acid in an aqueous solution for at least 10 minutes to produce an anodized C-MEMS carbon structure; negatively polarizing the anodized C-MEMS carbon structure by applying a negative voltage with respect to a Ag/AgCl reference electrode to produce a C-MEMS carbon structure having increased double-layer capacitance.

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Classifications

  • H01G11/64Primary

    characterised by additives · CPC title

  • Hybrid capacitors · CPC title

  • Energy storage using capacitors · CPC title

  • H01G11/24Primary

    characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor · CPC title

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Frequently asked questions

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What does patent US9892869B2 cover?
Disclosed herein are methods of manufacturing micro-super capacitors from C-MEMS structures.
Who is the assignee on this patent?
Beidaghi Majid, Wang Chunlei, Chen Wei, and 1 more
What technology area does this patent fall under?
Primary CPC classification H01G11/64. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 13 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).