Bandgap reference circuit and power supply circuit

US9891647B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9891647-B2
Application numberUS-201615173304-A
CountryUS
Kind codeB2
Filing dateJun 3, 2016
Priority dateNov 16, 2011
Publication dateFeb 13, 2018
Grant dateFeb 13, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A bandgap reference circuit includes a first temperature correction circuit that is connected between a power supply terminal and a node between a first resistor and a second resistor. The first temperature correction circuit includes a first transistor that is connected between the first power supply terminal and the node between the first resistor and the second resistor, a control terminal of the first transistor being connected at a junction where the end of a first bipolar transistor connects together with a third resistor, and a fourth resistor that is connected in series between the first transistor and the first power supply terminal.

First claim

Opening claim text (preview).

What is claimed is: 1. A bandgap reference circuit comprising: a first temperature correction circuit that is connected between a power supply terminal and a node between a first resistor and a second resistor, wherein the first temperature correction circuit comprises: a first transistor that is connected between the first power supply terminal and the node between the first resistor and the second resistor, a control terminal of the first transistor being connected at a junction where the end of a first bipolar transistor connects together with a third resistor; and a fourth resistor that is connected in series between the first transistor and the first power supply terminal. 2. The bandgap reference circuit according to claim 1 , wherein the third resistor is coupled to a node connecting the third resistor and the first bipolar transistor together. 3. The bandgap reference circuit according to claim 1 , wherein the fourth resistor is a fixed resistor. 4. The bandgap reference circuit according to claim 1 , wherein the fourth resistor is a variable resistor. 5. The bandgap reference circuit according to claim 1 , further comprising a fifth resistor that is connected between the third resistor and the first power supply terminal. 6. The bandgap reference circuit according to claim 5 , wherein the first temperature correction circuit further comprises: a second transistor that is connected between the first power supply terminal and the node between the first resistor and the second resistor, the control terminal of the second transistor being connected to a node between the third resistor and the fifth resistor. 7. The bandgap reference circuit according to claim 6 , further comprising a sixth resistor that is connected in series between the second transistor and the second power supply terminal. 8. The bandgap reference circuit according to claim 7 , wherein the sixth resistor is a fixed resistor or a variable resistor. 9. The bandgap reference circuit according to claim 1 , further comprising an amplifier including an input connected to an end of a second power supply terminal of the first bipolar transistor and an end of the second power supply terminal of the second bipolar transistor, and an output connected to the output terminal. 10. The bandgap reference circuit according to claim 1 , wherein the first temperature correction circuit further comprises: a second transistor that is connected between the first power supply terminal and the node between the first resistor and the second resistor, the control terminal of the second transistor being connected to the third resistor. 11. A power supply circuit comprising: a first temperature correction circuit that is connected between a power supply terminal and a node between a first resistor and a second resistor, wherein the first temperature correction circuit comprises: a first transistor that is connected between the first power supply terminal and the node between the first resistor and the second resistor, a control terminal of the first transistor being connected at a junction where the end of a first bipolar transistor connects together with third resistor; and a fourth resistor that is connected in series between the first transistor and the first power supply terminal; and a second temperature correction circuit and a booster unit that are provided between the first temperature correction circuit and an output terminal, wherein the booster unit comprises: a first booster resistor that is connected between each base of the first bipolar transistor and the second bipolar transistor and the output terminal; and a second booster resistor that is connected between each base of the first bipolar transistor and the second bipolar transistor and the second power supply terminal. 12. The power supply circuit according to claim 11 , wherein the second temperature correction circuit comprises: a third bipolar transistor that is connected between the second power supply terminal and the first power supply terminal, the base of the third bipolar transistor connected to a node between the first booster resistor and the second booster resistor. 13. The power supply circuit according to claim 2 , wherein the second temperature correction circuit further comprises a seventh resistor that is connected in series to the third bipolar transistor between the second power supply terminal and the first power supply terminal. 14. The power supply circuit according to claim 13 , wherein the seventh resistor is a fixed resistor or a variable resistor. 15. The power supply circuit according to claim 11 , wherein the booster unit further comprises a third booster resistor that is connected between the first booster resistor and the output terminal. 16. The power supply circuit according to claim 11 , wherein the second temperature correction circuit comprises: a fourth bipolar transistor that is connected between the second power supply terminal and the first power supply terminal, the base of the fourth bipolar transistor being connected to a node between the first booster resistor and the third booster resistor; and an eighth resistor that is connected in series to the fourth bipolar transistor between the second power supply terminal and the first power supply terminal.

Assignees

Inventors

Classifications

  • G05F3/08Primary

    wherein the variable is DC · CPC title

  • using both bipolar and field-effect technology · CPC title

  • Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities (G05F3/26 takes precedence) · CPC title

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Frequently asked questions

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What does patent US9891647B2 cover?
A bandgap reference circuit includes a first temperature correction circuit that is connected between a power supply terminal and a node between a first resistor and a second resistor. The first temperature correction circuit includes a first transistor that is connected between the first power supply terminal and the node between the first resistor and the second resistor, a control terminal o…
Who is the assignee on this patent?
Renesas Electronics Corp
What technology area does this patent fall under?
Primary CPC classification G05F3/08. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Feb 13 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).