Hall effect sensor with graphene detection layer
US-2015102807-A1 · Apr 16, 2015 · US
US9891294B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9891294-B2 |
| Application number | US-201715419149-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 30, 2017 |
| Priority date | Oct 14, 2015 |
| Publication date | Feb 13, 2018 |
| Grant date | Feb 13, 2018 |
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A method of detecting a particle comprises magnetizing a particle using an AC magnetic field; generating an AC voltage in a sensing device having a conductive substantially 2-dimensional lattice structure from the magnetized particle; superimposing a DC magnetic field on the generated AC voltage in the sensing device; and measuring an AC Hall voltage at the sensing device.
Opening claim text (preview).
What is claimed is: 1. An apparatus, comprising: a first coil for providing a DC magnetic field; a second coil for providing an AC magnetic field; and a conductive substantially 2-dimensional lattice structure proximate the first coil and the second coil and being biased with a voltage; wherein the first coil, and the second coil, and the conductive substantially 2-dimensional lattice structure are separated by dielectric layers. 2. The apparatus of claim 1 , further comprising a first set of contacts disposed in contact with the conductive substantially 2-dimensional lattice structure. 3. The apparatus of claim 1 , further comprising a first set of vias in contact with the first coil and a second set of vias in contact with the second coil. 4. The apparatus of claim 1 , wherein the conductive substantially 2-dimensional lattice structure comprises graphene. 5. The apparatus of claim 1 , wherein the conductive substantially 2-dimensional lattice structure comprises MoS 2 , WSe 2 , black phosphorous, carbon nanotubes, Si nanowire, or a combination of any of the foregoing materials. 6. The apparatus of claim 1 , wherein at least one of the dielectric layers is disposed on a substrate of glass, quartz, SiC, silicon nitride, plastic, or a combination of any of the foregoing materials. 7. The apparatus of claim 1 , wherein at least one of the dielectric layers comprises SiO 2 , Al 2 O 3 , HfO, or a combination of any of the foregoing materials. 8. The apparatus of claim 1 , wherein the second coil is a thin linear element.
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