Silicon-on-sapphire device with minimal thermal strain preload and enhanced stability at high temperature

Patent metadata

Field	Value
Publication number	US-9890033-B2
Application number	US-201514679420-A
Country	US
Kind code	B2
Filing date	Apr 6, 2015
Priority date	Apr 6, 2015
Publication date	Feb 13, 2018
Grant date	Feb 13, 2018

Abstract

A silicon-on-sapphire chip with minimal thermal strain preload is provided. The chip includes a sapphire substrate having a first-sapphire surface and an opposing second-sapphire surface; and a silicon layer overlaying the first-sapphire surface. The silicon layer is formed by: creating a plurality of buried cavities in a plane within tens of microns from a first-silicon surface of a silicon wafer; laser fusing the first-silicon surface to the first-sapphire surface at room temperature to attach the silicon wafer to a sapphire wafer; and cleaving the silicon wafer along the plane including the plurality of buried cavities. A silicon-wafer layer is formed from the silicon material between the first-silicon surface and the plane of the plurality of buried cavities. The silicon-wafer layer and the sapphire wafer form a silicon-on-sapphire wafer. The silicon-on-sapphire chip is formed by dicing the silicon-on-sapphire wafer.

First claim

What is claimed is:

1. A silicon-on-sapphire chip with minimal thermal strain preload, the chip comprising:
a monolithic sapphire substrate having a first-sapphire surface and an opposing second-sapphire surface, wherein the monolithic sapphire substrate includes a sapphire cavity opening from the second-sapphire surface; and
a silicon layer overlaying the first-sapphire surface, wherein the silicon layer has a thickness less than or equal to 10 microns, and wherein the silicon layer is formed by:
creating a plurality of buried cavities in a plane less than or equal to 10 microns from a first-silicon surface of a silicon wafer;
laser fusing at least a portion of the first-silicon surface to at least a portion of the first-sapphire surface at room temperature to attach the silicon wafer to a sapphire wafer, at least a portion of the sapphire wafer including the monolithic sapphire substrate;
cleaving the silicon wafer along the plane including the plurality of buried cavities,

wherein a silicon-wafer layer attached to the sapphire wafer is formed from silicon material between the first-silicon surface and the plane of the plurality of buried cavities, wherein the silicon-wafer layer and the sapphire wafer form a silicon-on-sapphire wafer, and wherein the silicon-on-sapphire chip is formed by dicing the silicon-on-sapphire wafer; and
wherein the silicon-on-sapphire chip further comprises:
a pressure sensing diaphragm including:
a sapphire diaphragm formed between a sapphire-cavity floor of the sapphire cavity and the first-sapphire surface; and

a silicon diaphragm including a portion of the silicon layer overlaying the first-sapphire surface and opposing the sapphire-cavity floor of the respective at least one sapphire cavity.

2. The silicon-on-sapphire chip of claim 1 , further comprising:
at least one non-conductive substrate overlaying at least one of the second-sapphire surface and a second-silicon surface.

3. The silicon-on-sapphire chip of claim 2 , further including:
at least one via extending through at least one of the at least one non-conductive substrate to electrically contact circuitry associated with at least one pressure sensing diaphragm; and
substrate circuitry in the at least one of the at least one non-conductive substrate, the substrate circuitry contacting the at least one via extending through the at least one of the at least one non-conductive substrate.

4. The silicon-on-sapphire chip of claim 1 , wherein the silicon layer overlaying the first-sapphire surface is further processed by polishing the silicon-wafer layer attached to the sapphire wafer after the silicon wafer is cleaved.

5. The silicon-on-sapphire chip of claim 1 , wherein the plurality of buried cavities are formed by:
implanting hydrogen through the first-silicon surface of the silicon wafer; and
heating the silicon wafer.

6. A silicon-on-sapphire device with minimal thermal strain preload, the device comprising:
a monolithic sapphire substrate having a first-sapphire surface and an opposing second-sapphire surface, wherein the monolithic sapphire substrate includes a sapphire cavity opening from the second-sapphire surface; and
a silicon layer having a first-silicon surface and an opposing second-silicon surface, the silicon layer overlaying the first-sapphire surface, wherein the silicon layer has a thickness less than or equal to 10 microns, and wherein the silicon layer is formed by:
creating a plurality of buried cavities in a plane less than or equal to 10 microns from a first-silicon surface of a silicon wafer;
laser fusing, at room temperature, at least a portion of the first-silicon surface to at least a portion of the first-sapphire surface to attach the silicon wafer to the sapphire wafer, at least a portion of the sapphire wafer including the monolithic sapphire substrate;
cleaving the silicon wafer along the plane including the plurality of buried cavities,

wherein a silicon-wafer layer attached to the sapphire wafer is formed from the silicon material between the first-silicon surface and the plane of the plurality of buried cavities, wherein the silicon-wafer layer and the sapphire wafer form a silicon-on-sapphire wafer;
circuitry formed in at least the silicon-wafer layer, wherein the silicon-on-sapphire device is formed by dicing the silicon-on-sapphire wafer; and
a pressure sensing diaphragm including:
a sapphire diaphragm formed between a sapphire-cavity floor of the sapphire cavity and the first-sapphire surface; and
a silicon diaphragm including a portion of the silicon layer overlaying the first-sapphire surface and opposing the sapphire-cavity floor of the sapphire cavity,

wherein pressure applied to the pressure sensing diaphragm deflects the pressure sensing diaphragm by an amount proportional to the amount of pressure applied.

7. The silicon-on-sapphire device of claim 6 , wherein the circuitry formed in at least the silicon layer includes:
at least one bridge-tangential-silicon-piezo resistor formed in the silicon layer tangential to the silicon diaphragm; and
at least one bridge-radial-silicon-piezo resistor formed in the silicon layer parallel to a radius of the silicon diaphragm,
wherein the pressure sensing diaphragm, the at least one bridge-tangential-silicon-piezo resistor, and the at least one bridge-radial-silicon-piezo resistor form a piezo-resistive bridge that generates a strain field proportional to the amount of pressure applied.

8. The silicon-on-sapphire device of claim 6 , further comprising:
a sealed mounting package configured to withstand high-pressure and high-temperature, and configured to enclose all but the pressure sensing diaphragm of the silicon-on-sapphire device.

9. The silicon-on-sapphire chip of claim 6 , further comprising:
a non-conductive substrate overlaying a second-sapphire surface, the second-sapphire surface opposing the first sapphire surface.

10. The silicon-on-sapphire chip of claim 9 , further including:
at least one via extending from the non-conductive substrate to electrically contact circuitry associated with at least one of the pressure sensing diaphragm; and
substrate circuitry in the non-conductive substrate contacting the at least one via.

11. The silicon-on-sapphire device of claim 6 , further comprising:
a sealed mounting package configured to withstand high-pressure and high-temperature, wherein the circuitry is configured to sense a pressure applied to the pressure sensing diaphragm.

12. The silicon-on-sapphire device of claim 6 , further comprising:
a sapphire cover forming at least one pressure sensing diaphragm overlaying the second-silicon surface of the silicon layer, the sapphire cover encasing at least one reference vacuum in contact with the second-silicon surface.

13. A method of forming a silicon-on-sapphire chip with minimal thermal strain preload, the method comprising:
providing a monolithic sapphire substrate having a first-sapphire surface and an opposing second-sapphire surface;
forming a sapphire cavity opening from the second-sapphire surface;
providing a silicon wafer overlaying the first-sapphire surface;
creating a plurality of buried cavities in a plane within less than or equal to 10 tens of microns from a first-silicon surface of the silicon wafer;
laser fusing, at room temperature, at least a portion of the first-silicon surface to at least a portion of the first-sapphire surface of a sapphire wafer to attach the silicon wafer to the sapphire wafer, at least a portion of the sapphire wafer including the monolithic sapphire substrate;
cleaving the silicon wafer along the plane including the plurality

Assignees

• Honeywell Int Inc

Inventors

• Brown Gregory C

Classifications

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P90/1916

  with separation or delamination along an ion implanted layer, e.g. Smart-cut · CPC title

• B81B2207/094

  Feed-through, via · CPC title

• B81C1/00904

  Multistep processes for the separation of wafers into individual elements not provided for in groups B81C1/00873 - B81C1/00896 · CPC title

• B81B3/004 Primary

  Angular deflection · CPC title