Power module with the integration of control circuit

Patent metadata

Field	Value
Publication number	US-9887183-B2
Application number	US-201615151730-A
Country	US
Kind code	B2
Filing date	May 11, 2016
Priority date	Jul 9, 2015
Publication date	Feb 6, 2018
Grant date	Feb 6, 2018

Abstract

The present disclosure provides a power module with the integration of a control circuit at least, including: a power substrate; a power device mounted on the power substrate; and at least one control substrate which supports the control circuit, is electrically connected with the power substrate and disposed at an angle of inclination on a surface of the power substrate on which the power device is mounted; wherein the angle of inclination is greater than or equal to 45 degrees and smaller than or equal to 135 degrees. In the power module provided by the present disclosure, only the power substrate as well as the connections between the control substrate and the power substrate occupies the footprint area of the power module, and thus the horizontal footprint area of the power module is effectively reduced and thereby the power density of the power module is increased.

First claim

What is claimed is:

1. A power module with the integration of a control circuit, comprising:
a power substrate;
a power device mounted on the power substrate; and
at least one control substrate which supports the control circuit, is electrically connected with the power substrate and disposed at an angle of inclination on a surface of the power substrate on which the power device is mounted;
wherein the angle of inclination is greater than or equal to 45 degrees and smaller than or equal to 135 degrees;
wherein the at least one control substrate comprises two conductive wiring layers and one insulation layer, the two conductive wiring layers are disposed on both surfaces of the one insulation layer, respectively, and current through the two conductive wiring layers flows oppositely so as to form an inverse coupling electromagnetic field.

2. The power module according to claim 1 , wherein the power substrate comprises at least one conductive wiring layer on which the power device is disposed.

3. The power module according to claim 1 , wherein a control device in the control circuit is disposed on the conductive wiring layers.

4. The power module according to claim 1 , wherein each of the conductive wiring layers has a thickness greater than or equal to 5 micrometers and smaller than or equal to 2 millimeters.

5. The power module according to claim 1 , wherein the insulation layer has a thickness greater than or equal to 5 micrometers and smaller than or equal to 2 millimeters.

6. The power module according to claim 1 , wherein the conductive wiring layers of the at least one control substrate comprise a bending portion in parallel with the power substrate, and the bending portion is electrically connected with and fixed onto the power substrate via a bonding material.

7. The power module according to claim 1 , wherein the at least one control substrate is vertically disposed on the surface of the power substrate on which the power device is mounted.

8. The power module according to claim 1 , further comprising:
a housing covering the surface of the power substrate on which the power device is mounted, and having an engagement mechanism disposed on the housing for engaging with the at least one control substrate.

9. The power module according to claim 8 , wherein a portion on the at least one control substrate which is in contact with the at least one engagement mechanism is coated with an adhesive material, and a portion of the housing which is in contact with the power substrate is coated with a sealing material.

10. The power module according to claim 8 , wherein the at least one engagement mechanism comprises a mounting groove or a flexible buckle.

Assignees

• Delta Electronics Inc

Inventors

• Wang Tao
• Zhao Zhenqing
• Li Zeng
• Lu Kai

Classifications

• H10W90/766

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/764

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/753

  between laterally-adjacent chips · CPC title