Semiconductor device having a Pd-containing adhesion layer

Patent metadata

Field	Value
Publication number	US-9887131-B2
Application number	US-201415111048-A
Country	US
Kind code	B2
Filing date	Sep 17, 2014
Priority date	Mar 27, 2014
Publication date	Feb 6, 2018
Grant date	Feb 6, 2018

Abstract

According to present invention, a semiconductor device includes a semiconductor substrate formed of GaAs, an adhesion layer formed of Pd or an alloy containing Pd on the semiconductor substrate, a barrier layer formed of Co or an alloy containing Co on the adhesion layer, and a metal layer formed of Cu, Ag or Au on the barrier layer.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a semiconductor substrate formed of GaAs;
an adhesion layer formed of Pd or an alloy containing at least Pd and either P or GaAs on the semiconductor substrate;
a barrier layer formed of Co or an alloy containing Co on the adhesion layer; and
a metal layer formed of Cu, Ag or Au on the barrier layer.

2. A semiconductor device comprising:
a semiconductor substrate formed of GaAs;
an adhesion layer formed of Pd or an alloy containing Pd on the semiconductor substrate;
a barrier layer formed of Co or an alloy containing Co on the adhesion layer; and
a metal layer formed of Cu, Ag or Au on the barrier layer,
wherein part of the adhesion layer is formed of Pd—Ga—As.

3. A semiconductor device comprising:
a semiconductor substrate formed of GaAs;
an adhesion layer formed of Pd or an alloy containing Pd on the semiconductor substrate;
a barrier layer formed of Co or an alloy containing Co on the adhesion layer; and
a metal layer formed of Cu, Ag or Au on the barrier layer,
wherein the entire adhesion layer is formed of Pd—Ga—As.

4. A semiconductor device comprising:
a semiconductor substrate formed of GaAs;
an adhesion layer formed of Pd or an alloy containing Pd on the semiconductor substrate;
a barrier layer formed of Co or an alloy containing Co on the adhesion layer; and
a metal layer formed of Cu, Ag or Au on the barrier layer, and
an alloy layer containing Co and Pd between the adhesion layer and the barrier layer.

5. The semiconductor device according to claim 1 , wherein the layer thickness of the adhesion layer is equal to or larger than 1 nm and equal to or smaller than 30 nm.

6. A semiconductor device comprising:
a semiconductor substrate formed of GaAs;
an adhesion layer formed of Pd or an alloy containing Pd on the semiconductor substrate;
a barrier layer formed of Co or an alloy containing Co on the adhesion layer; and
a metal layer formed of Cu, Ag or Au on the barrier layer,
wherein the adhesion layer is formed of Pd—P.

7. The semiconductor device according to claim 1 , wherein the barrier layer is formed of Co—P or Co—W—P.

Assignees

• Mitsubishi Electric Corp

Inventors

• Nishizawa Koichiro

Classifications

• H10D64/0116

  to Group III-V semiconductors · CPC title

• H10W20/0698

  Local interconnections · CPC title

• H10W20/0526

  by thermal treatment thereof · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title