Temporary adhesion method and method for producing thin wafer

Patent metadata

Field	Value
Publication number	US-9884979-B2
Application number	US-201615271056-A
Country	US
Kind code	B2
Filing date	Sep 20, 2016
Priority date	Oct 8, 2015
Publication date	Feb 6, 2018
Grant date	Feb 6, 2018

Abstract

The present invention is a temporary adhesion method for temporarily bonding a support and a wafer via a temporary adhesive material, including attaching the wafer to the support via the temporary adhesive material including a complex temporary adhesive material layer that consists of a thermoplastic resin layer (A) exhibiting a storage modulus E′ of 1 to 500 MPa and a tensile rupture strength of 5 to 50 MPa at 25° C. and a thermosetting polymer layer (B) exhibiting a storage modulus E′ of 1 to 1000 MPa and a tensile rupture strength of 1 to 50 MPa at 25° C. after curing, wherein the attaching is performed by forming the layer (A) on the front surface of the wafer from a liquid composition (A′), forming the layer (B) on the support by laminating a film resin (B′), and then heating the wafer and the support under reduced pressure, or forming the layer (A) on the front surface of the wafer from the liquid composition (A′), forming the layer (B) on the layer (A) by laminating the film resin (B′), and then heating the wafer and the support under reduced pressure, and heat curing the layer (B). This temporary adhesion method facilitates temporary adhesion and separation and can increase productivity of thin wafers.

First claim

The invention claimed is:

1. A temporary adhesion method for temporarily bonding a support and a wafer having a front surface on which a circuit is formed and a back surface to be processed via a temporary adhesive material for a wafer processing, the method comprising the steps of:
attaching the wafer to the support via the temporary adhesive material for a wafer processing including a two-layered complex temporary adhesive material layer that consists of a first temporary adhesive layer composed of a thermoplastic resin layer (A) exhibiting a storage modulus E′ of 1 to 500 MPa and a tensile rupture strength of 5 to 50 MPa at 25° C. and a second temporary adhesive layer composed of a thermosetting polymer layer (B) exhibiting a storage modulus E′ of 1 to 1000 MPa and a tensile rupture strength of 1 to 50 MPa at 25° C. after curing,
wherein the attaching is performed by removing a first protective layer from a protective layer-attached resin film, which has a film resin (B′) that has been formed from a composition containing a thermosetting polymer and the protective layers formed on the front and back surfaces of the film resin (B′), forming the thermoplastic resin layer (A) on the front surface of the wafer from a liquid composition (A′) containing a thermoplastic resin, forming the thermosetting polymer layer (B) on the support by laminating a film resin (B′) on which a second protective layer remains, and removing the second protective layer, and then heating the wafer and the support under reduced pressure, or forming the thermoplastic resin layer (A) on the front surface of the wafer from the liquid composition (A′), forming the thermosetting polymer layer (B) on the resin layer (A) by laminating the film resin (B′) on which the second protective layer remains, and removing the second protective layer, and then heating the wafer and the support under reduced pressure; and
adhesively bonding the thermoplastic resin layer (A) and the thermosetting polymer layer (B) by heat curing the thermosetting polymer layer (B).

2. The temporary adhesion method according to claim 1 , wherein, in the step of attaching, the attaching is performed under heating at 40 to 200° C.

3. The temporary adhesion method according to claim 2 , wherein the thermoplastic resin layer (A) is a non-silicone thermoplastic resin layer.

4. The temporary adhesion method according to claim 1 , wherein the thermoplastic resin layer (A) is a non-silicone thermoplastic resin layer.

5. The temporary adhesion method according to claim 1 , wherein the thermosetting polymer layer (B) is a thermosetting siloxane-modified polymer layer.

6. The temporary adhesion method according to claim 5 , wherein the thermosetting siloxane-modified polymer layer is a layer of a composition containing 100 parts by mass of a siloxane bond-containing polymer having a repeating unit shown by the following general formula (1) and a weight average molecular weight of 3,000 to 500,000, and 0.1 to 50 parts by mass of one or more crosslinkers selected from the group consisting of an amino condensate, a melamine resin, a urea resin each modified with formalin or formalin-alcohol, a phenol compound having on average two or more methylol or alkoxymethylol groups per molecule, and an epoxy compound having on average two or more epoxy groups per molecule,

wherein R 1 to R 4 may be the same or different, and represent a monovalent hydrocarbon group having 1 to 8 carbon atoms; “m” is an integer of 1 to 100; B is a positive number; A is 0 or a positive number, provided that A+B=1; and X is a divalent organic group shown by the following general formula (2),

wherein Z represents a divalent organic group selected from any of

N represents 0 or 1; R 5 and R 6 each represent an alkyl or alkoxy group having 1 to 4 carbon atoms, and may be the same or different from each other; and “k” represents any of 0, 1, and 2.

7. The temporary adhesion method according to claim 5 , wherein the thermosetting siloxane-modified polymer layer is a layer of a composition containing 100 parts by mass of a siloxane bond-containing polymer having a repeating unit shown by the following general formula (3) and a weight average molecular weight of 3,000 to 500,000, and 0.1 to 50 parts by mass of one or more crosslinkers selected from the group consisting of a phenol compound having on average two or more phenol groups per molecule and an epoxy compound having on average two or more epoxy groups per molecule,

wherein R 1 to R 4 may be the same or different, and represent a monovalent hydrocarbon group having 1 to 8 carbon atoms; “m” is an integer of 1 to 100; B is a positive number; A is 0 or a positive number, provided that A+B=1; and Y is a divalent organic group shown by the following general formula (4),

wherein V represents a divalent organic group selected from any of

“p” represents 0 or 1; R 7 and R 8 each represent an alkyl or alkoxy group having 1 to 4 carbon atoms, and may be the same or different from each other; and “h” represents any of 0, 1, and 2.

8. The temporary adhesion method according to claim 1 , wherein the thermosetting polymer layer (B) exhibits a 180° peeling force of 2 gf to 50 gf after heat curing, the 180° peeling force being measured with a polyimide test piece having a width of 25 mm.

9. A method for producing a thin wafer, comprising the steps of:
(a) grinding or polishing the back surface of the wafer temporarily bonded to the support via the temporary adhesive material for a wafer processing by the temporary adhesion method according to claim 1 ;
(b) processing the back surface of the wafer; and
(c) separating the processed wafer from the temporary adhesive material for a wafer processing and the support.

10. The method for producing a thin wafer according to claim 9 , further comprising (d) cleaning a separation plane of the processed wafer after the step (c).

11. The method for producing a thin wafer according to claim 10 , wherein the step (c) includes immersing the whole of the processed wafer in a solvent before the separating.

12. The method for producing a thin wafer according to claim 11 , wherein the step (d) includes cleaning by two-fluid cleaning.

13. The method for producing a thin wafer according to claim 10 , wherein the step (d) includes cleaning by two-fluid cleaning.

14. The method for producing a thin wafer according to claim 9 , wherein the step (c) includes immersing the whole of the processed wafer in a solvent before the separating.

15. The method for producing a thin wafer according to claim 14 , wherein the step (d) includes cleaning by two-fluid cleaning.

16. The temporary adhesion method according to claim 1 , wherein the laminating the wafer with the film resin (B′) on which the second protective layer remains is conducted by pressure-bonding the film resin (B′) on which the second protective layer remains to the support or the wafer having the thermoplastic resin layer (A) at once, at

Assignees

• Shinetsu Chemical Co

Inventors

• Yasuda Hiroyuki
• Sugo Michihiro
• Tanabe Masahito

Classifications

• H10P72/7422

  used to protect an active side of a device or wafer · CPC title

• H10P72/7416

  used during dicing or grinding · CPC title

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title

• H10P72/7402 Primary

  Wafer tapes, e.g. grinding or dicing support tapes · CPC title

• H10P72/74

  using temporarily an auxiliary support · CPC title