Optoelectronic semiconductor chip, optoelectronic semiconductor component, and a method for producing an optoelectronic semiconductor component

Patent metadata

Field	Value
Publication number	US-9882097-B2
Application number	US-201615227287-A
Country	US
Kind code	B2
Filing date	Aug 3, 2016
Priority date	May 18, 2011
Publication date	Jan 30, 2018
Grant date	Jan 30, 2018

Abstract

An optoelectronic semiconductor chip includes a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light, wherein the luminescence conversion element has a first lamina fixed to a first partial region of an outer surface of the semiconductor body, the outer surface emitting primary light, and leaving free a second partial region of the outer surface, the luminescence conversion element has a second lamina fixed to a surface of the first lamina facing away from the semiconductor body and spaced apart from the semiconductor body, the first lamina is at least partly transmissive to the primary radiation, a section of the second lamina covers at least the second partial region, and at least the section of the second lamina is absorbent and/or reflective and/or scattering for the primary radiation.

First claim

What is claimed is:

1. An optoelectronic semiconductor chip comprising: a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light,
wherein
the luminescence conversion element has a first lamina fixed to a first partial region of an upper outer surface of the semiconductor body, said upper outer surface emitting primary light, and leaving free a second partial region of said upper outer surface,
the luminescence conversion element has a second lamina fixed to a surface of the first lamina facing away from the semiconductor body and spaced apart from the semiconductor body,
the first lamina is at least partly transmissive to the primary radiation,
a section of the second lamina covers at least the second partial region, and
at least the section of the second lamina is absorbent and/or reflective and/or scattering for the primary radiation.

2. The optoelectronic semiconductor chip according to claim 1 , wherein an electrical connection location composed of a metallic material is applied to a partial region of the upper outer surface of the semiconductor body left free by the first lamina.

3. The optoelectronic semiconductor chip according to claim 1 , wherein the first lamina contains a phosphor and the second lamina contains at least one element selected from the group consisting of a phosphor and a wavelength-selective filter that transmits secondary light and absorbs and/or reflects primary light.

4. The optoelectronic semiconductor chip according to claim 1 , wherein the first lamina is transparent or translucent and the second lamina contains a phosphor.

5. The optoelectronic semiconductor chip according to claim 1 , wherein thickness of the first lamina is greater than 50 μm.

6. The optoelectronic semiconductor chip according to claim 1 , wherein an edge region of the second lamina laterally projects beyond the semiconductor body and the edge region absorbs and/or reflects and/or scatters the primary radiation.

7. The optoelectronic semiconductor chip according to claim 1 , wherein the first and/or the second lamina are/is absorbent and/or reflective for the primary radiation such that the luminescence conversion element at a surface facing away from the semiconductor body and provided to emit secondary light, emits at most two percent of the radiation power of a primary light coupled in through a surface facing the semiconductor body.

8. The optoelectronic semiconductor chip according to claim 1 , wherein the first lamina is fixed to the first partial region by a transparent or translucent adhesive layer.

9. An optoelectronic component comprising the semiconductor chip according to claim 2 and an electrical connection conductor fixed to the electrical connection location, wherein the second lamina covers the electrical connection conductor at least in places.

10. The optoelectronic component according to claim 9 , wherein the semiconductor body is laterally surrounded with a reflective material leaving free at least the first partial region of the upper outer surface provided to emit primary light.

11. The optoelectronic component according to claim 10 , wherein the semiconductor body and the first lamina are surrounded with a reflective material covering the second partial region at least in places.

12. A method of producing the optoelectronic component according to claim 9 , comprising:
providing a carrier element for the semiconductor body,
fixing the semiconductor body on the carrier element,
fixing the electrical connection conductor to the semiconductor body and the carrier element, and
at least in places covering the connection conductor with the second lamina after the connection conductor has been fixed.

13. The method according to claim 12 , wherein either the first lamina is fixed before fixing the connection conductor to the semiconductor body and, after the connection conductor has been fixed, the second lamina is fixed to the first lamina, or first, the luminescence conversion element with the first and second laminae is produced and, after the connection conductor has been fixed, the luminescence conversion element is fixed to the semiconductor body.

14. An optoelectronic semiconductor chip comprising: a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light,
wherein
the luminescence conversion element has a first lamina fixed to a first partial region of an upper outer surface of the semiconductor body, said upper outer surface emitting primary light, and leaving free a second partial region of said upper outer surface,
the luminescence conversion element has a second lamina fixed to a surface of the first lamina facing away from the semiconductor body and spaced apart from the semiconductor body,
the first lamina is at least partly transmissive to the primary radiation,
a section of the second lamina covers at least the second partial region, and
the first lamina is transparent or translucent and the second lamina contains a phosphor.

15. The optoelectronic component according to claim 14 , wherein an electrical connection location composed of a metallic material is applied to a partial region of the upper outer surface of the semiconductor body left free by the first lamina.

16. The optoelectronic component according to claim 14 , wherein an edge region of the second lamina laterally projects beyond the semiconductor body and the first lamina.

17. An optoelectronic semiconductor chip comprising: a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light,
wherein
the luminescence conversion element has a first lamina fixed to a first partial region of an upper outer surface of the semiconductor body, said upper outer surface emitting primary light, and leaving free a second partial region of said upper outer surface,
the luminescence conversion element has a second lamina fixed to a surface of the first lamina facing away from the semiconductor body and spaced apart from the semiconductor body,
the first lamina is at least partly transmissive to the primary radiation,
a section of the second lamina covers at least the second partial region, and
an electrical connection location composed of a metallic material is applied to that partial region of the upper outer surface of the semiconductor body left free by the first lamina.

18. The optoelectronic component according to claim 17 , wherein the first lamina is transparent or translucent and the second lamina contains a phosphor.

19. The optoelectronic component according to claim 17 , wherein the first lamina contains a phosphor and the second lamina contains a wavelength-selective filter that transmits secondary light and absorbs or reflects primary light.

20. The optoelectronic component according to claim 17 , wherein an edge region of the second lamina laterally projects beyond the semiconductor body and the first lamina.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Eisert Dominik
• Baade Torsten
• Zitzlsperger Michael

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/5434

  the connected ends being on auxiliary connecting means on bond pads, e.g. on other bond wires · CPC title

• H10W72/5363

  the connected ends being wedge-shaped · CPC title

• H10W72/536

  the connected ends being ball-shaped · CPC title