Coherence measuring device for spin-polarized electron beam and method using the same

US9881767B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9881767-B2
Application numberUS-201515516976-A
CountryUS
Kind codeB2
Filing dateSep 28, 2015
Priority dateOct 9, 2014
Publication dateJan 30, 2018
Grant dateJan 30, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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Abstract

Official abstract text for this publication.

A path of a spin-polarized electron beam is split into two by a splitter. A spin direction of the spin-polarized electron beam is rotated by a spin direction rotator disposed on a first path, and delayed by a first delay device. On a second path, the electron beam passes through a sample stage. The spin-polarized electron beams split into the first path and the second path are superposed by a biprism, and its intensity distribution is measured. Coherence is measured from a relation between a spin direction rotation angle, a delay time, and a visibility of an interference fringe.

First claim

Opening claim text (preview).

The invention claimed is: 1. A coherence measuring device for a spin-polarized electron beam, the device comprising: a semiconductor photocathode configured to emit a spin-polarized electron beam of which spin direction is polarized; a splitter configured to split a path of the spin-polarized electron beam emitted from the semiconductor photocathode into two paths; a spin direction rotator and a first delay device that are disposed on a first path which is one of the split two paths split by the splitter; a sample stage disposed on a second path which is another of the two paths split by the splitter; a biprism configured to superpose spin-polarized electron beams split into the first path and the second path; and an intensity distribution measuring device configured to measure an intensity distribution of the spin-polarized electron beams superposed by the biprism. 2. The coherence measuring device according to claim 1 , further comprising a second delay device disposed on the second path. 3. A method of measuring a change a sample imparts to a traveling speed of a spin-polarized electron beam using the coherence measuring device according to claim 2 , the method comprising: measuring a relation between a time difference between a delay time by the first delay device and another delay time by the second delay device and a visibility of an interference fringe obtained when the intensity distribution is measured; and specifying a time difference with which the interference fringe is clearest. 4. An electron microscope in which the coherence measuring device according to claim 2 is incorporated, wherein the semiconductor photocathode is further configured to function as an electron source for the electron microscope. 5. An electron microscope in which the coherence measuring device according to claim 2 is incorporated, wherein both the spin-polarized electron beam traveling on the first path and the spin-polarized electron beam traveling on the second path pass through a sample lens of the electron microscope. 6. The electron microscope according to claim 5 , wherein the biprism is disposed downstream of the sample lens. 7. The electron microscope according to claim 6 , wherein the splitter is disposed upstream of the sample stage. 8. A method of measuring a rotation angle by which a sample rotates a spin direction of a spin-polarized electron beam using the coherence measuring device according to claim 2 , the method comprising: measuring a relation between the rotation angle by the spin direction rotator and a visibility of an interference fringe obtained when the intensity distribution is measured; and specifying a rotation angle with which the interference fringe is clearest. 9. An electron microscope in which the coherence measuring device according to claim 1 is incorporated, wherein the semiconductor photocathode is further configured to function as an electron source for the electron microscope. 10. An electron microscope in which the coherence measuring device according to claim 1 is incorporated, wherein both the spin-polarized electron beam traveling on the first path and the spin-polarized electron beam traveling on the second path pass through a sample lens of the electron microscope. 11. The electron microscope according to claim 10 , wherein the biprism is disposed downstream of the sample lens. 12. The electron microscope according to claim 11 , wherein the splitter is disposed upstream of the sample stage. 13. A method of measuring a rotation angle by which a sample rotates a spin direction of a spin-polarized electron beam using the coherence measuring device according to claim 1 , the method comprising: measuring a relation between the rotation angle by the spin direction rotator and a visibility of an interference fringe obtained when the intensity distribution is measured; and specifying a rotation angle with which the interference fringe is clearest.

Assignees

Inventors

Classifications

  • Spin polarisation (particles) · CPC title

  • H01J37/26Primary

    Electron or ion microscopes; Electron or ion diffraction tubes · CPC title

  • by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials · CPC title

  • Holography or phase contrast, phase related imaging in general, e.g. phase plates · CPC title

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What does patent US9881767B2 cover?
A path of a spin-polarized electron beam is split into two by a splitter. A spin direction of the spin-polarized electron beam is rotated by a spin direction rotator disposed on a first path, and delayed by a first delay device. On a second path, the electron beam passes through a sample stage. The spin-polarized electron beams split into the first path and the second path are superposed by a b…
Who is the assignee on this patent?
Univ Nagoya Nat Univ Corp
What technology area does this patent fall under?
Primary CPC classification H01J37/26. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 30 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).