Flexible photo-anode of dye-sensitized solar cell and manufacturing method thereof
US-9214288-B2 · Dec 15, 2015 · US
US9880458B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-9880458-B1 |
| Application number | US-201715489431-A |
| Country | US |
| Kind code | B1 |
| Filing date | Apr 17, 2017 |
| Priority date | Apr 17, 2017 |
| Publication date | Jan 30, 2018 |
| Grant date | Jan 30, 2018 |
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A method for preparing photoactive perovskite materials. The method comprises the steps of: introducing a lead halide and a first solvent to a first vessel and contacting the lead halide with the first solvent to dissolve the lead halide to form a lead halide solution, introducing a Group 1 metal halide a second solvent into a second vessel and contacting the Group 1 metal halide with the second solvent to dissolve the Group 1 metal halide to form a Group 1 metal halide solution, and contacting the lead halide solution with the Group 1 metal halide solution to form a thin-film precursor ink. The method further comprises depositing the thin-film precursor ink onto a substrate, drying the thin-film precursor ink to form a thin film, annealing the thin film; and rinsing the thin film with a salt solution.
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What is claimed is: 1. A method comprising the steps of: preparing a thin-film precursor ink, wherein preparing the thin-film precursor ink comprises the steps of: introducing a lead halide into a first vessel; introducing a first solvent to the first vessel; contacting the lead halide with the first solvent to dissolve the lead halide to form a lead halide solution; introducing a Group 1 metal halide into a second vessel; introducing a second solvent into the second vessel; and contacting the Group 1 metal halide with the second solvent to dissolve the group 1 metal halide to form a Group 1 metal halide solution; contacting the lead halide solution with the Group 1 metal halide solution to form the thin-film precursor ink; depositing the thin-film precursor ink onto a substrate; drying the thin-film precursor ink to form a thin film; annealing the thin film; and rinsing the thin film with a salt solution comprising a third solvent and a salt selected from the group consisting of methylammonium halide, formamidinium halide, guanidinium halide, ethene tetramine halide, imidazolium halide, 1,2,2-triaminovinyl ammonium halide, and 5-aminovaleric acid hydrohalide. 2. The method of claim 1 , wherein the lead halide comprises lead (II) iodide. 3. The method of claim 1 , wherein the Group 1 metal halide comprises cesium iodide. 4. The method of claim 1 , wherein the Group 1 metal halide comprises rubidium iodide. 5. The method of claim 1 , wherein the Group 1 metal halide comprises sodium iodide. 6. The method of claim 1 , wherein the Group 1 metal halide comprises potassium iodide. 7. The method of claim 1 , wherein the first solvent and the second solvent are selected from the group consisting of dry N-cyclohexyl-2-pyrrolidone, alkyl-2-pyrrolidone, dimethylformamide (DMF), dialkylformamide, dimethylsulfoxide (DMSO), methanol, ethanol, propanol, butanol, tetrahydrofuran, formamide, tert-butylpyridine, pyridine, alkylpyridine, pyrrolidine, chlorobenzene, dichlorobenzene, dichloromethane, chloroform, and combinations thereof. 8. The method of claim 1 , wherein the first solvent comprises dry dimethylformamide (DMF). 9. The method of claim 1 , wherein the second solvent comprises dimethylsulfoxide (DMSO). 10. The method of claim 1 , wherein the third solvent is selected from the group consisting of dimethylformamide, isopropanol, methanol, ethanol, butanol, chloroform, chlorobenzene, dimethylsulfoxide, water, and combinations thereof. 11. The method of claim 1 , wherein the thin-film precursor ink has a molar concentration of the Group 1 metal halide that is between 1% and 25% of the molar concentration of the lead halide. 12. The method of claim 1 , wherein annealing the thin film occurs for between about 5 to about 30 minutes at a temperature between about 40° C. to about 60° C. 13. The method of claim 1 , wherein the salt comprises formamidinium iodide. 14. The method of claim 1 , wherein the salt comprises methylammonium iodide. 15. The method of claim 1 , wherein rinsing the thin film comprises at least partial submersion in the salt solution.
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