Method and apparatus for microwave assisted chalcogen radicals generation for 2-D materials

Patent metadata

Field	Value
Publication number	US-9879341-B2
Application number	US-201615188103-A
Country	US
Kind code	B2
Filing date	Jun 21, 2016
Priority date	Jun 22, 2015
Publication date	Jan 30, 2018
Grant date	Jan 30, 2018

Abstract

Embodiments described herein provide a remote plasma system utilizing a microwave source. Additionally, generation and deposition techniques for 2D transition metal chalcogenides with large area uniformity utilizing microwave assisted generation of radicals is disclosed. Plasma may be generated remotely utilizing the microwave source. A processing platform configured to deposit 2D transition metal chalcogenides is also disclosed.

First claim

What is claimed is:

1. An apparatus for processing a substrate, comprising:
a platform configured to support a plurality of processing chambers;
a first processing chamber coupled to the platform, the first processing chamber configured to perform an annealing process over a first surface of the substrate;
a second processing chamber coupled to the platform, the second processing chamber configured to deposit a chalcogenide film over the first surface of the substrate;
a third processing chamber coupled to the platform, the third processing chamber configured to deposit a dielectric material over the chalcogenide film;
a fourth processing chamber coupled to the platform, the fourth processing chamber configured to deposit a hardmask over the dielectric material;
a fifth processing chamber coupled to the platform, the fifth processing chamber configured to etch at least a portion of the hardmask and the dielectric material;
a sixth processing chamber coupled to the platform, the sixth processing chamber configured to deposit a first metal material over the hardmask; and
a seventh processing chamber coupled to the platform, the seventh processing chamber configured to deposit a second metal material over the first metal material.

2. The apparatus of claim 1 , wherein the first metal material comprises nickel, titanium, gold, or combinations and mixtures thereof.

3. The apparatus of claim 1 , wherein the second metal material comprises selenium.

4. The apparatus of claim 1 , wherein the dielectric material is a silicon dioxide (SiO 2 ) material or a hafnium oxide (HfO 2 ) material.

5. The apparatus of claim 1 , further comprising:
a transfer chamber coupled to the platform, the transfer chamber configured to maintain a vacuum environment during transfer of the substrate between each of the processing chambers.

6. The apparatus of claim 1 , wherein the chalcogenide film comprises a metal chalcogenide material.

7. The apparatus of claim 6 , wherein the metal chalcogenide material comprises molybdenum hexacarbonyl, molybdenum (V) chloride, tungsten hexachloride (TiCl 6 ), tungsten hexacarbonyl, ammonium tetrathiomolybdate, sulfur, selenium, hydrogen sulfide, a thioether material, phosphine, ammonia, chlorine, dichloromethane, or mixtures and combinations thereof.

8. The apparatus of claim 1 , wherein the substrate comprises a single silicon material.

9. An apparatus for processing a substrate, comprising:
a platform configured to support a plurality of chambers, the chambers comprising:
an annealing chamber coupled to the platform;
a chalcogenide film deposition chamber coupled to the platform;
a high K film deposition chamber coupled to the platform;
an etch chamber coupled to the platform;
a first metal film deposition chamber coupled to the platform; and
a second metal film deposition chamber coupled to the platform.

10. The apparatus of claim 9 , wherein the first metal film deposition chamber deposits nickel, titanium, gold, or combinations and mixtures thereof.

11. The apparatus of claim 9 , wherein the second metal film deposition chamber deposits selenium.

12. The apparatus of claim 9 , wherein the chalcogenide film deposition chamber deposits a metal chalcogenide film over the substrate.

13. The apparatus of claim 12 , wherein the metal chalcogenide film comprises molybdenum hexacarbonyl, molybdenum (V) chloride, tungsten hexachloride (TiCl 6 ), tungsten hexacarbonyl, ammonium tetrathiomolybdate, sulfur, selenium, hydrogen sulfide, a thioether material, phosphine, ammonia, chlorine, or dichloromethane.

14. The apparatus of claim 12 , further comprising:
a dielectric material deposition chamber, configured to deposit a dielectric material over the metal chalcogenide film; and
a hardmask deposition chamber, configured to deposit a hardmask over at least a portion of the dielectric material.

15. The apparatus of claim 9 , further comprising:
a transfer chamber coupled to the platform, the transfer chamber configured to maintain a vacuum environment during transfer of the substrate between each of the chambers.

16. The apparatus of claim 9 , wherein the substrate comprises a single silicon material.

17. A method for synthesizing and depositing a two-dimensional film material onto a substrate, comprising:
performing a first process within a first processing chamber to anneal a first surface of the substrate;
performing a second process within a second processing chamber to deposit a chalcogenide film layer over the first surface of the substrate;
performing a third process within a third processing chamber to deposit a dielectric material layer over the chalcogenide film layer;
performing a fourth process within a fourth processing chamber to deposit a hardmask over the dielectric material layer;
performing a fifth process within a fifth processing chamber to etch at least a portion of the hardmask and the dielectric material layer;
performing a sixth process within a sixth processing chamber to deposit a first metal material over the hardmask; and
performing a seventh process within a seventh processing chamber to deposit a second metal material over the first metal material.

18. The method of claim 17 , wherein the first metal material and the second metal material form an interconnected layer.

19. The method of claim 17 , further comprising:
performing an annealing process to form a metal layer on the substrate.

20. The method of claim 17 , wherein the two dimensional film material is a chalcogenide film material having a thickness less than 1 nanometer.

Assignees

• Applied Materials Inc

Inventors

• Singh Kaushal K
• Jadhav Deepak
• Agarwal Ashutosh
• Goel Ashish
• Parihar Vijay
• Ping Er-Xuan
• Thakur Randhir P S

Classifications

• H10P72/0476

  comprising at least one plating chamber · CPC title

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title

• H10P72/0454

  surrounding a central transfer chamber · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title