Electronic device based on multilayer thin film and method for manufacturing the same using a three-dimensional structure
US-2024309503-A1 · Sep 19, 2024 · US
US9876200B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9876200-B2 |
| Application number | US-201615040706-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 10, 2016 |
| Priority date | Aug 7, 2015 |
| Publication date | Jan 23, 2018 |
| Grant date | Jan 23, 2018 |
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A microbattery structure for hermetically sealed microbatteries is provided. In one embodiment, the microbattery structure includes a first silicon substrate containing at least one pedestal which houses a cathode material of a microbattery and at least one depression which houses A FIRST sealant material of the microbattery. The structure further includes a second silicon substrate containing at least one pedestal which houses an anode material of the microbattery and at least one depression which houses a second sealant material of the microbattery. An insulated centerpiece is bonded to the first sealant material present in at least two depressions on the first silicon substrate. An interlock structure is formed by aligning and superimposing the second silicon substrate on the first silicon substrate in a mortise and tenon fashion and sealing the two substrates using a high force.
Opening claim text (preview).
The invention claimed is: 1. A microbattery structure for forming hermetically sealed microbatteries, comprising: a first silicon substrate containing at least one pedestal which defines an area that houses a cathode material and at least one depression which defines an area that houses a first sealant material; a second silicon substrate containing at least one pedestal which defines an area that houses an anode material and at least one depression which defines an area that houses a second sealant material; and an insulated centerpiece bonded to said first sealant material present in said at least one depression on said first silicon substrate, wherein an interlock structure is formed by aligning and superimposing said second silicon substrate on said first silicon substrate in a mortise and tenon fashion. 2. The microbattery structure of claim 1 , further comprising an anode and cathode current collectors escape package present between an insert and said insulated centerpiece to avoid shorting of said microbattery structure. 3. The microbattery structure of claim 1 , wherein a seal is provided having a seal width of no greater than 100 μm. 4. The microbattery structure of claim 3 , wherein said seal has an aspect ratio of greater than 10:1. 5. The microbattery structure of claim 1 , wherein both of said first and second sealant materials have selective permeability to gaseous substances, allowing passage of hydrogen molecules only. 6. The microbattery structure of claim 1 , wherein said microbattery structure has a width of no greater than 400 μm. 7. The microbattery structure of claim 1 , wherein said at least one depression on said first silicon substrate is textured. 8. The microbattery structure of claim 1 , wherein grooves are present on surfaces of said insulated centerpiece and said grooves are located in protruding structures present on said depressions of said first and second silicon substrates. 9. The microbattery structure of claim 1 , wherein said insulated centerpiece interlock has grooves that interlock with protruding structures on said depressions of said first and second silicon substrates in a mortise and tenon fashion. 10. A microbattery structure for forming hermetically sealed microbatteries, comprising a first silicon substrate containing at least one depression which houses a sealant material and an anode material, wherein said sealant material laterally surrounds and directly contacts a sidewall of said anode material; and a second silicon substrate containing at least one pedestal which houses a cathode material and at least one depression, wherein an interlock structure is formed by aligning and superimposing said second silicon substrate on first silicon substrate in a mortise and tenon fashion. 11. The microbattery structure of claim 10 , wherein a seal width is no greater than 100 μm. 12. The microbattery structure of claim 11 , wherein said seal has an aspect ratio of greater than 10:1. 13. The microbattery structure of claim 12 , wherein thickness of microbattery structure is no greater than 400 μm. 14. The microbattery structure of claim 10 , wherein said sealant material has selective permeability to gaseous substances, allowing passage of hydrogen molecules only. 15. A microbattery structure for forming hermetically sealed microbatteries, comprising: a first silicon substrate containing at least one pedestal which defines an area that houses a cathode material; and a second silicon substrate containing at least one pedestal which defines an area that houses an anode material and at least one depression which defines an area that houses a sealant material, wherein an interlock structure is formed by aligning and superimposing said second silicon substrate on first silicon substrate in a mortise and tenon fashion and wherein said cathode material is located entirely within said area defined by the at least one pedestal present in said first silicon substrate.
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