Capacitively coupled electrodeless plasma apparatus and a method using capacitively coupled electrodeless plasma for processing a silicon substrate
US-2015372167-A1 · Dec 24, 2015 · US
US9876129B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9876129-B2 |
| Application number | US-201213468266-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 10, 2012 |
| Priority date | May 10, 2012 |
| Publication date | Jan 23, 2018 |
| Grant date | Jan 23, 2018 |
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A photovoltaic device includes a substrate having a plurality of hole shapes formed therein. The plurality of hole shapes each have a hole opening extending from a first surface and narrowing with depth into the substrate. The plurality of hole shapes form a hole pattern on the first surface, and the hole pattern includes flat areas separating the hole shapes on the first surface. A photovoltaic device stack is formed on the first surface and extends into the hole shapes. Methods are also provided.
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What is claimed is: 1. A photovoltaic device, comprising: a substrate having a plurality of hole shapes formed therein, the plurality of hole shapes each having a hole opening extending from a first surface and narrowing with depth into the substrate, the plurality of hole shapes forming a hole pattern on the first surface, the hole pattern including flat areas separating the hole shapes on the first surface, wherein each of the hole openings has a pitch relative to adjacent hole…
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