Strained group IV channels

Patent metadata

Field	Value
Publication number	US-9876080-B2
Application number	US-201615218922-A
Country	US
Kind code	B2
Filing date	Jul 25, 2016
Priority date	Jul 31, 2015
Publication date	Jan 23, 2018
Grant date	Jan 23, 2018

Abstract

Disclosed herein is a semiconductor structure including: (i) a monocrystalline substrate having a top surface, (ii) a non-crystalline structure overlying the monocrystalline substrate and including an opening having a width smaller than 10 microns and exposing part of the top surface of the monocrystalline substrate. The semiconductor structure also includes (iii) a buffer structure having a bottom surface abutting the part and a top surface having less than 10 8 threading dislocations per cm 2 , the buffer structure being made of a material having a first lattice constant. The semiconductor structure also includes (iv) one or more group IV monocrystalline structures abutting the buffer structure and that are made of a material having a second lattice constant, different from the first lattice constant.

First claim

The invention claimed is:

1. A method for forming a semiconductor structure comprising:
epitaxially growing, on a monocrystalline substrate, a first buffer layer from one of: a III-V buffer layer or a II-VI buffer layer, wherein the first buffer layer is grown within a space confined by non-crystalline sidewalls, wherein the space has a width smaller than 10 microns, and wherein the material forming the surface of the first buffer layer facing away from the monocrystalline substrate has a first relaxed lattice constant;
epitaxially growing on the first buffer layer a first at least one group IV monocrystalline structure comprising a material having a second relaxed lattice constant different from the first relaxed lattice constant; and
removing the first buffer layer from the first at least one group IV monocrystalline structure by selectively etching away at least part of the first buffer layer on the first at least one group IV monocrystalline structure.

2. The method of claim 1 , further comprising:
annealing the first buffer layer.

3. The method of claim 1 , further comprising:
epitaxially growing, on the first buffer layer, a monocrystalline interlayer from one of: a III-V monocrystalline interlayer or a II-VI monocrystalline interlayer, wherein the interlayer is made of a material having a third relaxed lattice constant equal to the second relaxed lattice constant, and wherein the interlayer is thinner than a critical thickness at which a strain induced by the difference between the first and the third relaxed lattice constant is relaxed.

4. The method of claim 3 , wherein epitaxially growing on the first buffer layer the first at least one group IV monocrystalline structure comprises growing the first at least one group IV monocrystalline structure on the monocrystalline interlayer.

5. The method of claim 4 , further comprising:
removing the interlayer from the first at least one group IV monocrystalline structure by selectively etching away at least part of the interlayer layer on the first at least one group IV monocrystalline structure.

6. The method of claim 1 , wherein the first at least one group IV monocrystalline structure has two extremities along its longitudinal direction, and wherein the first at least one group IV monocrystalline structure is secured to the substrate by having the two extremities attached to the substrate by a material that is not etched.

7. The method of claim 6 , wherein one extremity is attached to the substrate via attachment to a source contact, and wherein another extremity is attached to the substrate via attachment to a drain contact.

8. The method of claim 1 , wherein the first relaxed lattice constant is smaller than the second relaxed lattice constant, thereby forming a compressively strained group IV monocrystalline structure.

9. The method of claim 1 , wherein the material having a second relaxed lattice constant is a semiconductor of a general formula Si 1-x Ge x , and wherein x is from 0 to 0.4.

10. The method of claim 9 , further comprising:
epitaxially growing Si on the Si 1-x Ge x material, wherein x is from 0.01 to 0.4.

11. The method of claim 10 , wherein the thickness of the Si 1-x Ge x material is from 5 to 30 nm.

12. The method of claim 1 , wherein the first at least one group IV monocrystalline structure has the shape of one of: a nanowire or a nanosheet.

13. The method of claim 1 , wherein the semiconductor structure is a field effect transistor, wherein the first at least one group IV monocrystalline structure forms a channel, and wherein the method further comprises providing the field effect transistor with a source, a drain, and a gate structure.

14. The method of claim 1 , wherein the lattice mismatch of the material having the first relaxed lattice constant with the material having the second relaxed lattice constant is from −0.1% to −3%.

15. The method of claim 1 , wherein the lattice mismatch of the material having the first relaxed lattice constant with the material having the second relaxed lattice constant is from 0.1% to 3%.

16. The method of claim 1 , further comprising:
epitaxially growing a second buffer layer from one of: a III-V buffer layer or a II-VI buffer layer, wherein the second buffer layer is made of a material having a fourth relaxed lattice constant;
epitaxially growing on the second buffer layer a second at least one group IV monocrystalline structure made of a material having a fifth relaxed lattice constant; and
removing the second buffer layer from the second at least one group IV monocrystalline structure by selectively etching away at least the part of the second buffer layer present on the second at least one group IV monocrystalline structure.

17. The method of claim 1 , wherein the monocrystalline substrate has facets defined therein prior to epitaxial growth.

18. The method claim 1 , wherein epitaxially growing on the first buffer layer the first at least one group IV monocrystalline structure comprises epitaxially growing on the first buffer layer: (i) a first monocrystalline structure made of a group IV material having a higher relaxed lattice constant than the first lattice constant, and (ii) a second monocrystalline structure made of a group IV material having a lower relaxed lattice constant than the first lattice constant.

Assignees

• Imec Vzw

Inventors

• Kunert Bernardette
• Langer Robert
• Eneman Geert

Classifications

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title

• H10P95/904

  of Group III-V semiconductors · CPC title

• H10P50/646

  of Group III-V materials · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/3404

  being Group IVA materials · CPC title